CJ2102 [JCST]
Small Signal Field-Effect Transistor;
| 型号： | CJ2102 |
| 厂家： | 
JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD |
| 描述： | Small Signal Field-Effect Transistor |
| 文件： | 总2页 (文件大小：97K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD
SOT-323 Plastic-Encapsulate MOSFETS
SOT-323
CJ2102
N-Channel 20-V(D-S) MOSFET
FEATURE
TrenchFET Power MOSFET
z
APPLICATIONS
z
z
Load Switch for Portable Devices
DC/DC Converter
1. GATE
2. SOURCE
3. DRAIN
MARKING: TS2
Maximum ratings (Ta=25℃ unless otherwise noted)
Parameter
Symbol
Value
Unit
Drain-Source Voltage
Gate-Source Voltage
VDS
VGS
ID
20
±8
V
Continuous Drain Current
2.1
A
Continuous Source-Drain Current(Diode Conduction)
Power Dissipation
IS
0.6
PD
0.2
W
Thermal Resistance from Junction to Ambient (t≤5s)
Operating Junction
RθJA
TJ
625
℃/W
150
℃
Storage Temperature
TSTG
-55 ~+150
A,Jul,2012
Electrical characteristics (Ta=25℃ unless otherwise noted)
Parameter
Static Characteristics
Symbol
Test Condition
Min
Typ
Max
Unit
Drain-source breakdown voltage
Gate-threshold voltage
V(BR)DSS VGS = 0V, ID =10µA
20
V
0.95
VGS(th)
IGSS
VDS =VGS, ID =50µA
VDS =0V, VGS =±8V
VDS =20V, VGS =0V
VGS =4.5V, ID =3.6A
VGS =2.5V, ID =3.1A
VDS =5V, ID =3.6A
IS=0.94A,VGS=0V
0.65
1.2
±100
1
Gate-body leakage
nA
µA
Zero gate voltage drain current
IDSS
0.045
0.070
8
0.060
0.115
Drain-source on-resistance1
RDS(on)
Ω
Forward transconductance1
Diode forward voltage
Dynamic Characteristics
Total gate charge
gfs
S
V
1.2
10
VSD
0.76
Qg
Qgs
Qgd
Ciss
Coss
Crss
4.0
0.65
1.5
VDS =10V,VGS =4.5V,ID =3.6A
VDS =10V,VGS =0V,f=1MHz
nC
pF
Gate-source charge
Gate-drain charge
Input capacitance 2
Output capacitance 2
Reverse transfer capacitance2
Switching Characteristics2
Turn-on delay time
Rise time
300
120
80
td
7
15
80
60
25
(on)
V
DD=10V,
RL=5.5ꢀ, ID ≈3.6A,
GEN=4.5V,Rg=6ꢀ
tr
td(off)
tf
55
16
10
ns
Turn-off delay time
Fall time
V
Notes :
1. Pulse Test : Pulse width≤300µs, duty cycle ≤2%.
2. These parameters have no way to verify.
A,Jul,2012
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