D882 [JCST]
TRANSISTOR( NPN ); 晶体管( NPN )型号: | D882 |
厂家: | JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD |
描述: | TRANSISTOR( NPN ) |
文件: | 总2页 (文件大小:129K) |
中文: | 中文翻译 | 下载: | 下载PDF数据表文档文件 |
JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD
TO-126 Plastic-Encapsulate Transistors
D882 TRANSISTOR( NPN )
TO— 126
FEATURES
Power dissipation
1. EMITTER
2.COLLECTOR
3.BASE
PCM : 1.25
Collector current
ICM
W(Tamb=25℃)
:
3
A
Collector-base voltage
V(BR)CBO : 40
1 2 3
V
Operating and storage junction temperature range
TJ,Tstg: -55℃ to +150℃
ELECTRICAL CHARACTERISTICS(Tamb=25℃
unless otherwise specified)
Parameter
Symbol
V(BR)CBO
V(BR)CEO
V(BR)EBO
ICBO
Test
conditions
MIN
40
30
6
TYP
MAX
UNIT
V
Ic=100μA ,IE=0
Collector-base breakdown voltage
Collector-emitter breakdown voltage
Emitter-base breakdown voltage
Collector cut-off current
IC= 10 mA , IB=0
V
IE= 100 μA,IC=0
V
μA
μA
μA
VCB=40 V , IE=0
VCE=30 V , IB=0
VEB=6V , IC=0
VCE= 2V, IC= 1A
VCE=2V, IC= 100mA
IC=2A, IB= 0.2A
IC=2A, IB= 0.2A
1
10
1
Collector cut-off current
ICEO
Emitter cut-off current
IEBO
hFE(1)
60
32
400
DC current gain
hFE(2)
Collector-emitter saturation voltage
Base-emitter saturation voltage
VCE(sat)
VBE(sat)
0.5
1.5
V
V
VCE=5 V, I =0.1mA
C
Transition frequency
f
50
MHz
T
f = 10MHz
CLASSIFICATION OF hFE
(1)
Rank
R
O
Y
GR
Range
60-120
100-200
160-320
200-400
TO-126 PACKAGE OUTLINE DIMENSIONS
A
D
A1
b1
b
e
C
e1
Dimensions In Millimeters
Symbol
Dimensions In Inches
Min
Max
Min
Max
2.500
1.100
0.660
1.170
0.450
7.400
10.600
2.900
1.500
0.860
1.370
0.600
7.800
11.000
0.098
0.043
0.026
0.046
0.018
0.291
0.417
0.114
0.059
0.034
0.054
0.024
0.307
0.433
A
A1
b
b1
c
D
E
2.290TYP
0.090TYP
e
4.480
15.300
2.100
3.900
3.000
4.680
15.700
2.300
4.100
3.200
0.176
0.602
0.083
0.154
0.118
0.184
0.618
0.091
0.161
0.126
e1
L
L1
P
φ
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