KTC4075-SOT-323 [JCST]
TRANSISTOR (NPN); 晶体管（ NPN ）
| 型号： | KTC4075-SOT-323 |
| 厂家： | 
JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD |
| 描述： | TRANSISTOR (NPN) |
| 文件： | 总3页 (文件大小：182K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD
SOT-323 Plastic-Encapsulate Transistors
SOT-323
KTC4075 TRANSISTOR (NPN)
FEATURES
1. BASE
2. EMITTER
3. COLLECTOR
z
z
z
z
Excellent hFE linearity
High hFE
Low Noise
Complementary to KTA2014
MAXIMUM RATINGS* TA=25℃ unless otherwise noted
Symbol
Parameter
Value
60
Units
V
VCBO
VCEO
VEBO
IC
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
50
V
5
V
Collector Current -Continuous
Total Device Dissipation
150
100
-55-125
mA
mW
PD
TJ, Tstg
Junction and Storage Temperature
℃
ELECTRICAL CHARACTERISTICS (Tamb=25℃
unless otherwise specified)
Parameter
Symbol
Test
conditions
MIN
MAX
UNIT
Collector-base breakdown voltage
Collector-emitter breakdown voltage
Emitter-base breakdown voltage
Collector cut-off current
Emitter cut-off current
V(BR)CBO
V(BR)CEO
V(BR)EBO
ICBO
60
50
5
V
V
IC = 100µA, IE=0
IC = 1mA, IB=0
V
IE= 100µA, IC=0
VCB=60V, IE=0
0.1
0.1
µA
µA
IEBO
VEB=5V, IC=0
DC current gain
hFE
VCE= 6V, IC=2mA
IC=100mA, IB= 10mA
70
80
700
0.25
Collector-emitter saturation voltage
Transition frequency
VCEsat
V
VCE=10V, IC= 1mA
MHz
dB
dB
fT
Collector output capacitance
Noise figure
VCE=10V, IE=0, f=1MHz
Cob
3.5
10
VCE=6V,IE=0.1mA, f=1KHz,RG=10KΩ
NF
CLASSIFICATION OF hFE
Rank
O
70~140
LO
Y
GR
200~400
LGR
BL
Range
Marking
120~240
LY
350~700
LBL
Typical Characteristics
KTC4075
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