MMST5551(SOT-323) [JCST]
Transistor;
| 型号： | MMST5551(SOT-323) |
| 厂家： | 
JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD |
| 描述： | Transistor |
| 文件： | 总1页 (文件大小：77K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD
SOT-323 Plastic-Encapsulate Transistors
SOT-323
MMST5551 TRANSISTOR (NPN)
1. BASE
2. EMITTER
FEATURES
1. 25¡ À0. 05
3. COLLECTOR
Power dissipation
PCM:
0.2
W (Tamb=25℃)
2. 30¡ À0. 05
Collector current
ICM:
0.2
A
V
Collector-base voltage
V(BR)CBO
:
160
Operating and storage junction temperature range
Unit: mm
TJ, Tstg: -55℃ to +150℃
ELECTRICAL CHARACTERISTICS (Tamb=25℃ unless otherwise specified)
Parameter
Symbol
V(BR)CBO
V(BR)CEO
V(BR)EBO
ICBO
Test conditions
Ic=100µA, IE=0
Ic=1mA, IB=0
MIN
180
160
5
TYP
MAX
UNIT
V
Collector-base breakdown voltage
Collector-emitter breakdown voltage
Emitter-base breakdown voltage
Collector cut-off current
V
V
IE=10µA, IC=0
nA
nA
VCB=120V, IE=0
50
50
IEBO
Emitter cut-off current
VEB=3V, IC=0
hFE(1)
V
CE=5V, IC=1mA
80
80
30
DC current gain
hFE(2)
VCE=5V, IC=-10mA
250
hFE(3)
VCE=5V, IC=50mA
VCE(sat)
VCE(sat)
VBE(sat)
VBE(sat)
fT
V
V
IC=10mA, IB=1mA
IC=50mA, IB=5mA
0.15
0.2
1
Collector-emitter saturation voltage
Base-emitter voltage
V
IC=10mA, IB=1mA
V
IC=50mA, IB=5mA
1
100
300
6
MHz
pF
Transition frequency
VCE=10V, IC=10mA, f=100MHz
Cob
Collector output capacitance
V
CB=10V, IE=0, f=1MHz
V
CE=5V, Ic=0.2mA,
NF
8
dB
Noise figure
f=1KHZ, Rg=10Ω
Marking
K4N
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