S9012I [JCST]
Transistor;
| 型号： | S9012I |
| 厂家： | 
JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD |
| 描述： | Transistor |
| 文件： | 总2页 (文件大小：168K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO.,LTD
TO-92 Plastic-Encapsulate Transistors
TO-92
S9012
TRANSISTOR (PNP)
FEATURES
1. EMITTER
z
Complementary to S9013
Excellent hFE linearity
2. BASE
z
3. COLLECTOR
MAXIMUM RATINGS (TA=25℃ unless otherwise noted)
1 2 3
Symbol
VCBO
VCEO
VEBO
IC
Parameter
Value
-40
Units
V
Collector-Base Voltage
-25
V
Collector-Emitter Voltage
Emitter-Base Voltage
-5
V
Collector Current -Continuous
Collector Power Dissipation
Junction Temperature
-500
625
mA
mW
℃
PC
TJ
150
Tstg
Storage Temperature
-55-150
℃
ELECTRICAL CHARACTERISTICS (Tamb=25℃ unless otherwise specified)
Parameter
Symbol
V(BR)CBO
V(BR)CEO
V(BR)EBO
ICBO
Test conditions
IC= -100μA, IE=0
IC= -1mA,IB=0
MIN
-40
-25
-5
TYP
MAX
UNIT
Collector-base breakdown voltage
Collector-emitter breakdown voltage
Emitter-base breakdown voltage
Collector cut-off current
V
V
V
IE=-100μA, IC=0
VCB=-40V, IE=0
-0.1
-0.1
-0.1
400
μA
μA
μA
Collector cut-off current
ICEO
VCE=-20V, IB=0
Emitter cut-off current
IEBO
VEB= -5V, IC=0
hFE(1)
VCE=-4V,IC=-1mA
VCE=-1V, IC= -500mA
IC=-500mA, IB= -50mA
IC=-500mA, IB= -50mA
64
40
DC current gain
hFE(2)
Collector-emitter saturation voltage
Base-emitter saturation voltage
VCE(sat)
VBE(sat)
-0.6
-1.2
V
V
VCE=-6V, IC= -20mA
f=30MHz
Transition frequency
fT
150
MHz
CLASSIFICATION OF hFE(1)
Rank
D
E
F
G
H
I
J
Range
64-91
78-112
96-135
112-166
144-202
190-300
300-400
Typical Characteristics
S9012
相关型号：
S9012LT1
Small Signal Bipolar Transistor, 0.5A I(C), 25V V(BR)CEO, 1-Element, PNP, Silicon, PLASTIC PACKAGE-3
MCC
S9012LT1H
Small Signal Bipolar Transistor, 0.5A I(C), 25V V(BR)CEO, 1-Element, PNP, Silicon, PLASTIC PACKAGE-3
MCC
S9012LT1L
Small Signal Bipolar Transistor, 0.5A I(C), 25V V(BR)CEO, 1-Element, PNP, Silicon, PLASTIC PACKAGE-3
MCC
©2020 ICPDF网 联系我们和版权申明