S9012I-G [WEITRON]
Transistor;
| 型号： | S9012I-G |
| 厂家： | 
WEITRON TECHNOLOGY |
| 描述： | Transistor |
| 文件： | 总4页 (文件大小：2799K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
S9012
PNP General Purpose Transistors
* “G” Lead(Pb)-Free
TO-92
1. EMITTER
2. BASE
3. COLLECTOR
1
2
3
ABSOLUTE MAXIMUM RATINGS
(Ta=25 C)
Rating
Collector-Emitter Voltage
Collector-Base Voltage
Emitter-Base Voltage
Collector Current
Symbol
Unit
Vdc
Vdc
Vdc
mAdc
Value
-25
-40
-5
-500
V
CEO
V
V
CBO
EBO
I
C
P
0.625
150
Total Device Dissipation T =25 C
W
C
CM
A
Junction Temperature
Storage, Temperature
T
j
-55 to +150
Tstg
C
ELECTRICAL CHARACTERISTICS
Characteristics
Symbol
Min
Max
Unit
-
Collector-Emitter Breakdown Voltage (I = -1.0 mAdc, I =0)
V
-25
Vdc
Vdc
C
B
(BR)CEO
-
-
-40
-5
Collector-Base Breakdown Voltage (I = -100 uAdc, I =0)
V
V
C
E
(BR)CBO
Vdc
Emitter-Base Breakdown Voltage (I = -100 uAdc, I =0)
(BR)EBO
E
C
uAdc
I
I
CE0
-0.1
-0.1
-0.1
Collector Cutoff Current (V = -20 Vdc, I =0)
-
-
CE
B
uAdc
uAdc
Collector Cutoff Current (V = -40 Vdc, I =0)
CB
CBO
EBO
E
-
I
Emitter Cutoff Current (V = -5.0V c, I =0)
d
EB
C
WEITRON
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S9012
WE ITR ON
Electrical Characteristics (T =25 C unless otherwise noted) (Countinued)
A
Symbol
Unit
Max
Characteristics
Min
On Characteristics
DC Current Gain
(I = -50 mAdc, V = -1Vdc)
h
-
C
CE
64
40
300
FE(1)
(I = -500 mAdc, V = -1Vdc)
C CE
h
-
FE(2)
Collector-Emitter Saturation Voltage
V
CE(sat)
-
Vdc
-0.6
(I = 500 mAdc, I = -50 mAdc)
C
B
Base-Emitter Saturation Voltage
V
-
BE(sat)
Vdc
-1.2
-
(I = 500 mAdc, I = -50 mAdc)
C
B
f
MHz
T
Transition frequency
150
Classification Of hFE(1)
Rank
D
E
F
G
H
I
Range
64-91
78-112
96-135
112-166
144-202
190-300
WEITRON
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S9012
WE ITR ON
Typical Characteristics
WEITRON
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S9012
TO-92 Outline Dimensions
unit:mm
E
TO-92
Dim
A
B
C
D
Min
3.30
1.10
0.38
0.36
4.40
3.43
4.30
Max
3.70
1.40
0.55
0.51
4.70
-
C
E
G
H
J
4.70
J
1.270TYP
K
K
L
2.44
14.10
2.64
14.50
G
WEITRON
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