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S9018I(TO-92) [JCST]

Transistor;
S9018I(TO-92)
型号： S9018I(TO-92)
厂家： JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD    JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD
描述：

Transistor
文件： 总2页 (文件大小：375K)
中文：  中文翻译
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JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD  
TO-92 Plastic-Encapsulate Transistors  
TO – 92  
S9018 TRANSISTOR (NPN)  
1.EMITTER  
2.BASE  
FEATURES  
z
High Current Gain Bandwidth Product  
3.COLLECTOR  
MAXIMUM RATINGS (Ta=25℃ unless otherwise noted)  
Symbol  
VCBO  
VCEO  
VEBO  
IC  
Parameter  
Collector-Base Voltage  
Value  
25  
Unit  
V
Collector-Emitter Voltage  
18  
V
Emitter-Base Voltage  
4
V
Collector Current -Continuous  
Collector Power Dissipation  
Thermal Resistance From Junction To Ambient  
Junction Temperature  
50  
mA  
W
PC  
0.4  
RθJA  
Tj  
312.5  
150  
℃/W  
℃
Tstg  
Storage Temperature  
-55~+150  
℃
ELECTRICAL CHARACTERISTICS (Ta=25℃ unless otherwise specified)  
Parameter  
Symbol  
V(BR)CBO  
V(BR)CEO  
V(BR)EBO  
ICBO  
Test  
conditions  
Min  
25  
18  
4
Typ  
Max  
Unit  
V
Collector-base breakdown voltage  
Collector-emitter breakdown voltage  
Emitter-base breakdown voltage  
Collector cut-off current  
IC=100μA,IE=0  
IC=0.1mA,IB=0  
V
IE=100μA,IC=0  
V
VCB=20V,IE=0  
0.1  
0.1  
nA  
μA  
μA  
Collector cut-off current  
ICEO  
VCE=15V,IB=0  
Emitter cut-off current  
IEBO  
VEB=3V,IC=0  
0.1  
hFE  
VCE=5V, IC=1mA  
IC=10mA,IB=1mA  
IC=10mA,IB=1mA  
VCE=5V,IC=50mA,f=400MHz  
28  
270  
0.5  
DC current gain  
Collector-emitter saturation voltage  
Base-emitter saturation voltage  
Transition frequency  
VCE(sat)  
VBE(sat)  
fT  
V
V
1.42  
800  
MHz  
CLASSIFICATION OF hFE  
RANK  
D
E
F
G
H
I
J
RANGE  
28-45  
39-60  
54-80  
72-108  
97-146  
132-198  
180-270  
A,Jun,2011  
Typical Characteristics  
S9018  
hFE ——  
IC  
Static Characteristic  
10  
160  
COMMON EMITTER  
VCE=5V  
COMMON  
EMITTER  
Ta=25℃  
100uA  
90uA  
8
Ta=100℃  
Ta=25℃  
80uA  
120  
80  
40  
0
70uA  
6
60uA  
50uA  
40uA  
30uA  
4
2
20uA  
IB=10uA  
0
50  
0
2
4
6
8
10  
1
1
1
0
10  
COLLECTOR CURRENT IC (mA)  
COLLECTOR-EMITTER VOLTAGE VCE (V)  
VCEsat —— IC  
IC  
VBEsat ——  
1.0  
0.8  
0.6  
0.4  
0.3  
β=10  
β=10  
Ta=100℃  
Ta=25℃  
0.1  
Ta=25℃  
Ta=100℃  
0.01  
50  
50  
0.1  
1
10  
10  
COLLECTOR CURRENT IC (mA)  
COLLECTOR CURRENT IC (mA)  
Cob / Cib ——  
VCB / VEB  
IC ——  
VBE  
10  
COMMON EMITTER  
VCE=5V  
f=1MHz  
IE=0 / IC=0  
Ta=25℃  
Ta=100℃  
10  
Cib  
Cob  
1
Ta=25℃  
1
0.1  
0.1  
0.2  
0.4  
0.6  
0.8  
1.0  
1.2  
10  
20  
REVERSE VOLTAGE  
V
(V)  
BASE-EMITTER VOLTAGE  
VBE(V)  
PC —— Ta  
fT —— IC  
1200  
1000  
800  
0.5  
0.4  
0.3  
0.2  
0.1  
0.0  
600  
400  
VCE=5V  
Ta=25℃  
200  
1
3
10  
25  
50  
75  
100  
125  
150  
20  
COLLECTOR CURRENT IC (mA)  
AMBIENT TEMPERATURE Ta (℃)  
A,Jun,2011  

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