S9018L [JCST]
Transistor;
| 型号： | S9018L |
| 厂家： | 
JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD |
| 描述： | Transistor |
| 文件： | 总1页 (文件大小：506K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD
SOT-23 Plastic-Encapsulate Transistors
S9018
TRANSISTOR (NPN)
SOT-23
1. BASE
FEATURES
z
AM/FM Amplifier, Local Oscillator of FM/VHF Tuner
High Current Gain Bandwidth Product
2. EMITTER
3. COLLECTOR
z
MARKING：J8
MAXIMUM RATINGS (Ta=25℃ unless otherwise noted)
Symbol
Parameter
Value
Unit
V
VCBO
Collector-Base Voltage
30
15
5
VCEO
VEBO
IC
Collector-Emitter Voltage
Emitter-Base Voltage
V
V
Collector Current -Continuous
Collector Power Dissipation
50
200
mA
PC
mW
℃/W
℃
RθJA
625
150
Thermal Resistance from Junction to Ambient
Junction Temperature
Tj
Tstg
Storage Temperature
-55-150
℃
ELECTRICAL CHARACTERISTICS (Ta=25℃ unless otherwise specified)
Parameter
Symbol
V(BR)CBO
V(BR)CEO
V(BR)EBO
ICBO
Test conditions
IC= 100μA, IE=0
IC= 1mA, IB=0
Min
30
15
5
Typ
Max
Unit
V
Collector-base breakdown voltage
Collector-emitter breakdown voltage
Emitter-base breakdown voltage
Collector cut-off current
V
V
IE=100μA, IC=0
VCB=12V, IE=0
0.05
μA
μA
μA
Collector cut-off current
ICEO
VCE=12V, IB=0
0.1
0.1
190
0.5
1.4
Emitter cut-off current
IEBO
VEB= 3V, IC=0
DC current gain
hFE(1)
VCE=5V, IC= 1mA
IC=10mA, IB= 1mA
IC=10mA, IB= 1mA
70
Collector-emitter saturation voltage
Base-emitter saturation voltage
VCE(sat)
VBE(sat)
V
V
VCE=5V, IC= 5mA
f=400MHz
Transition frequency
800
MHz
fT
CLASSIFICATION OF hFE
Rank
L
H
70-105
105-190
Range
A,May,2011
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