S9018ML [JCST]
Transistor;
| 型号： | S9018ML |
| 厂家： | 
JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD |
| 描述： | Transistor |
| 文件： | 总2页 (文件大小：282K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD
WBFBP-03B Plastic-Encapsulate Transistors
C
WBFBP-03B
S9018M
TRANSISTOR
(1.2×1.2×0.5)
unit: mm
TOP
DESCRIPTION
NPN Epitaxial Silicon Transistor
B
E
E
B
C
1. BASE
FEATURES
2. EMITTER
3. COLLECTOR
High Current Gain Bandwidth Product fT=1.1 GHz (Typ)
BACK
APPLICATION
AM/FM Amplifier, Local Oscillator of FM/VHF Tuner
For portable equipment:(i.e. Mobile phone,MP3, MD,CD-ROM,
DVD-ROM,Note book PC, etc.)
MARKING: J8
C
J8
B E
MAXIMUM RATINGS TA=25℃ unless otherwise noted
Symbol
Parameter
Value
Units
V
VCBO
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
30
15
VCEO
VEBO
IC
V
5
V
Collector Current -Continuous
Collector Dissipation
50
mA
mW
℃
PC
150
150
-55-150
TJ
Junction Temperature
Storage Temperature
Tstg
℃
ELECTRICAL CHARACTERISTICS (Tamb=25℃
unless otherwise specified)
Parameter
Symbol
V(BR)CBO
V(BR)CEO
V(BR)EBO
ICBO
Test
conditions
MIN
30
15
5
TYP
MAX
UNIT
V
Collector-base breakdown voltage
Collector-emitter breakdown voltage
Emitter-base breakdown voltage
Collector cut-off current
IC= 100µA, IE=0
IC= 1mA, IB=0
V
V
IE=100µA, IC=0
VCB=12V, IE=0
VCE=12V, IB=0
VEB= 3V, IC=0
0.05
0.1
0.1
190
0.5
1.4
µA
µA
µA
Collector cut-off current
ICEO
Emitter cut-off current
IEBO
DC current gain
hFE
VCE=5V, IC= 1mA
IC=10mA, IB= 1mA
70
Collector-emitter saturation voltage
Base-emitter saturation voltage
VCE(sat)
VBE(sat)
V
V
IC=10mA, IB= 1mA
VCE=5V, IC= 5mA
f=400MHz
Transition frequency
600
1100
MHz
pF
fT
Collector output capacitance
Cobo
VCB=10V,IE=0,f=1MHz
2
CLASSIFICATION OF hFE
L
H
Rank
70-105
105-190
Range
Typical Characteristics
S9018M
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