S9018W [SECOS]

Plastic Encapsulated Transistor; 塑料封装晶体管
S9018W
型号: S9018W
厂家: SECOS HALBLEITERTECHNOLOGIE GMBH    SECOS HALBLEITERTECHNOLOGIE GMBH
描述:

Plastic Encapsulated Transistor
塑料封装晶体管

晶体 晶体管
文件: 总2页 (文件大小:297K)
中文:  中文翻译
下载:  下载PDF数据表文档文件
S9018W  
NPN Silicon  
Plastic Encapsulated Transistor  
Elektronische Bauelemente  
RoHS Compliant Product  
A suffix of “-C” specifies halogen & lead-free  
SOT-323  
FEATURE  
AM/FM Amplifier, Local Oscillator of FM/VHF Tuner  
High Current Gain Bandwidth Product fT = 1.1 GHz (Typ)  
A
L
3
3
Top View  
C B  
1
1
2
2
K
F
E
PACKAGING INFORMATION  
D
Weight: 0.0074 g  
H
J
G
Collector  
3
Millimeter  
Millimeter  
Min. Max.  
0.100 REF.  
0.525 REF.  
REF.  
REF.  
Min.  
Max.  
2.20  
2.45  
1.35  
1.10  
1.40  
0.40  
MARKING CODE  
1
Base  
A
B
C
D
E
F
1.80  
1.80  
1.15  
0.80  
1.20  
0.20  
G
H
J
K
L
0.08  
0.25  
J8  
-
-
0.650 TYP.  
2
Emitter  
ABSOLUTE MAXIMUM RATINGS (at TA = 25°C unless otherwise specified)  
Parameter  
Symbol  
Ratings  
Unit  
Collector to Base Voltage  
Collector to Emitter Voltage  
Emitter to Base Voltage  
VCBO  
VCEO  
VEBO  
IC  
30  
15  
5
V
V
V
Collector Current – Continuous  
Collector Power Dissipation  
Junction, Storage Temperature  
50  
200  
mA  
mW  
PC  
TJ, TSTG  
+150, -55 ~ +150  
ELECTRICAL CHARACTERISTICS (at TA = 25°C unless otherwise specified)  
Parameter  
Symbol  
Min.  
Typ.  
Max.  
Unit  
Test Conditions  
Collector-base Breakdown Voltage  
Collector-emitter Breakdown Voltage  
Emitter-base Breakdown Voltage  
Collector Cut-off Current  
V(BR)CBO  
V(BR)CEO  
V(BR)EBO  
ICBO  
30  
15  
5
-
-
-
-
-
-
-
-
-
-
-
-
-
V
IC = 100 μA, IE = 0  
IC = 0.1 mA, IB = 0  
IE = 100 μA, IC = 0  
VCB = 12 V, IE = 0  
VCE = 12 V, IB = 0  
VEB = 3 V, IC = 0  
-
V
-
V
50  
100  
100  
500  
1400  
190  
-
nA  
nA  
nA  
mV  
mV  
Collector Cut-off Current  
ICEO  
-
Emitter Cut-off Current  
IEBO  
-
Collector-emitter Saturation Voltage  
Base-emitter Saturation Voltage  
DC Current Gain  
V
CE(sat)  
BE(sat)  
hFE  
-
IC = 10 mA, IB = 1 mA  
IC = 10 mA, IB = 1 mA  
VCE = 5 V, IC = 1 mA  
V
70  
600  
-
Transition Frequency  
fT  
MHz  
pF  
V
CE = 5 V, IC = 10 mA, f = 30 MHz  
Collector Output Capacitance  
COB  
2
VCB = 10 V, IE = 0, f = 1 MHz  
CLASSIFICATION OF hFE  
Rank  
L
H
hFE  
70 - 105  
105 - 190  
01-June-2002 Rev. A  
Page 1 of 2  
S9018W  
NPN Silicon  
Plastic Encapsulated Transistor  
Elektronische Bauelemente  
CHARACTERISTIC CURVES  
01-June-2002 Rev. A  
Page 2 of 2  

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