DTC143TKA [JCST]
Digital transistors (built-in resistors); 数字晶体管（内置电阻）
| 型号： | DTC143TKA |
| 厂家： | 
JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD |
| 描述： | Digital transistors (built-in resistors) |
| 文件： | 总2页 (文件大小：115K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD
Digital transistors (built-in resistors)
DTC143TE/DTC143TUA
/DTC143TKA /DTC143TSA/ DTC143TCA
DIGITAL TRANSISTOR (NPN)
FEATURES
1. Built-in bias resistors enable the configuration of an inverter circuit without connecting external input
resistors(see equivalent circuit).
2. The bias resistors consist of thin-film resistors with complete isolation to allow negative biasing of the
input.They also have the advantage of almost completely eliminating parasitic effects.
3. Only the on/off conditions need to be set for operation, making device design easy.
PIN CONNENCTIONS AND MARKING
DTC143TE
DTC143TUA
(1) Base
(1)Base
(2) Emitter
(3) Collector
(2)Emitter
(3)Collector
SOT-323
Addreviated symbol: 03
Addreviated symbol: 03
SOT-523
DTC143TKA
DTC143TCA
(1) Base
(1) Base
(2) Emitter
(3) Collector
(2) Emitter
(3) Collector
SOT-23
Addreviated symbol: 03
SOT-23-3L
Addreviated symbol: 03
DTC143TSA
(1) Emitter
(2) Collector
(3) Base
TO-92S
Absolute maximum ratings(Ta=25℃)
Limits (DTC143T□ )
Parameter
Symbol
Unit
E
UA
CA
KA
SA
Collector-base voltage
Collector-emitter voltage
Emitter-base voltage
Collector current
V(BR)CBO
V(BR)CEO
V(BR)EBO
IC
50
V
V
50
5
V
100
mA
Collector Power dissipation
PC
150
200
300
mW
Junction temperature
Storage temperature
Tj
150
℃
℃
Tstg
-55~150
Electrical characteristics (Ta=25℃)
Parameter
Symbol
Min.
50
50
5
Typ
Max.
Unit
V
Conditions
Ic=50µA
Collector-base breakdown voltage
V(BR)CBO
Collector-emitter breakdown voltage V(BR)CEO
V
Ic=1mA
Emitter-base breakdown voltage
Collector cut-off current
Emitter cut-off current
V(BR)EBO
ICBO
IEBO
VCE(sat)
hFE
V
IE=50µA
0.5
µA
µA
V
VCB=50V
0.5
0.3
VEB=4V
Collector-emitter saturation voltage
DC current transfer ratio
Input resistance
IC=5mA,IB=0.25mA
VCE=5V,IC=1mA
100
600
6.11
R1
3.29
4.7
KΩ
Transition frequency
fT
250
MHz
VO=10V ,IO=5mA,f=100MHz
Typical Characteristics
相关型号：
DTC143TKAT146
Small Signal Bipolar Transistor, 0.1A I(C), 50V V(BR)CEO, 1-Element, NPN, Silicon, SC-59, 3 PIN
ROHM
DTC143TKAT147
Small Signal Bipolar Transistor, 0.1A I(C), 50V V(BR)CEO, 1-Element, NPN, Silicon,
ROHM
DTC143TKAT246
Small Signal Bipolar Transistor, 0.1A I(C), 50V V(BR)CEO, 1-Element, NPN, Silicon, SOT-23, 3 PIN
ROHM
©2020 ICPDF网 联系我们和版权申明