2SD2401 [JMNIC]
Silicon NPN Power Transistors; 硅NPN功率晶体管型号: | 2SD2401 |
厂家: | QUANZHOU JINMEI ELECTRONIC CO.,LTD. |
描述: | Silicon NPN Power Transistors |
文件: | 总3页 (文件大小:65K) |
中文: | 中文翻译 | 下载: | 下载PDF数据表文档文件 |
Product Specification
www.jmnic.com
Silicon NPN Power Transistors
2SD2401
DESCRIPTION
·
·With MT-200 package
·Complement to type 2SB1570
·DARLINGTON
APPLICATIONS
·Audio, Series Regulator
and General Purpose
PINNING(see Fig.2)
PIN
DESCRIPTION
1
Base
Collector;connected to
mounting base
2
3
Emitter
Fig.1 simplified outline (MT-200) and symbol
Absolute maximum ratings (Ta=25℃)
SYMBOL
VCBO
VCEO
VEBO
IC
PARAMETER
Collector-base voltage
Collector-emitter voltage
Emitter-base voltage
Collector current
CONDITIONS
Open emitter
VALUE
160
150
5
UNIT
V
Open base
V
Open collector
V
12
A
IB
Base current
1
A
PC
Collectorl power dissipation
Junction temperature
Storage temperature
TC=25℃
150
150
-55~150
W
℃
℃
Tj
Tstg
JMnic
Product Specification
www.jmnic.com
Silicon NPN Power Transistors
2SD2401
CHARACTERISTICS
Tj=25℃ unless otherwise specified
SYMBOL
VCEO
VCEsat
VBEsat
ICBO
PARAMETER
Collector-emitter breakdown voltage
Collector-emitter saturation voltage
Base-emitter saturation voltage
Collector cut-off current
Emitter cut-off current
CONDITIONS
IC=30mA; IB=0
MIN
TYP.
MAX
UNIT
V
150
IC=7 A;IB=7m A
IC=7 A;IB=7m A
VCB=160V; IE=0
VEB=5V; IC=0
2.5
3.0
V
V
100
100
μA
μA
IEBO
hFE
DC current gain
IC=7A ; VCE=4V
IC=2A ; VCE=12V
IE=0; VCB=10V;f=1MHz
5000
fT
Transition frequency
55
95
MHz
pF
COB
Output capacitance
Switching times
ton Turn-on time
ts
0.5
10.0
1.1
μs
μs
μs
IC=7A;RL=10Ω
IB1=- IB2=7mA
Storage time
Fall time
VCC=70V
tf
ꢀ hFE classifications
O
P
Y
5000-12000
6500-20000
15000-30000
JMnic
Product Specification
www.jmnic.com
Silicon NPN Power Transistors
2SD2401
PACKAGE OUTLINE
Fig.2 Outline dimensions
JMnic
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