JCS6N90FH-O-F-N-B [JSMC]
Low gate charge;型号: | JCS6N90FH-O-F-N-B |
厂家: | JILIN SINO-MICROELECTRONICS CO., LTD. |
描述: | Low gate charge |
文件: | 总11页 (文件大小:1090K) |
中文: | 中文翻译 | 下载: | 下载PDF数据表文档文件 |
N沟道增强型场效应晶体管
N-CHANNEL MOSFET
R
JCS6N90H
封装 Package
主要参数 MAIN CHARACTERISTICS
6 A
ID
900 V
3.0 Ω
VDSS
Rdson-max
(@Vgs=10V)
Qg-typ
14 nC
APPLICATIONS
用途
z High efficiency switch
mode power supplies
z Electronic lamp ballasts
based on half bridge
z UPS
z 高频开关电源
z 电子镇流器
z UPS 电源
产品特性
z低栅极电荷
FEATURES
zLow gate charge
zLow Crss (typical 9pF )
zFast switching
z低Crss (典型值9pF)
z开关速度快
z产品全部经过雪崩测试
z高抗dv/dt 能力
zRoHS 产品
z100% avalanche tested
zImproved dv/dt capability
zRoHS product
TO-262
订货信息 ORDER MESSAGE
无卤素
Halogen
Free
包
装
器件重量
Device
Weight
订 货 型 号
印
记
封
装
Order codes
Marking
Package
Packaging
JCS6N90CH-O-C-N-B
JCS6N90FH-O-F-N-B
JCS6N90BH-O-B-N-B
JCS6N90CH
JCS6N90FH
JCS6N90BH
TO-220C 否
TO-220MF 否
NO
NO
NO
条管 Tube 2.15 g(typ)
条管 Tube 2.20 g(typ)
条管 Tube 1.71 g(typ)
TO-262
否
版本:201510C
1/11
R
JCS6N90H
绝对最大额定值 ABSOLUTE RATINGS (Tc=25℃)
数 值
单
位
项
目
符 号
Value
Parameter
Symbol
JCS6N90CH/BH
JCS6N90FH
Unit
最高漏极-源极直流电压
VDSS
900
V
Drain-Source Voltage
ID
6
6*
A
A
连续漏极电流
T=25℃
T=100℃
Drain Current
-continuous
3.8
3.8*
最大脉冲漏极电流(注1)
Drain Current - pulse
(note 1)
IDM
24
24*
A
V
最高栅源电压
VGSS
EAS
IAR
±30
650
6
Gate-Source Voltage
单脉冲雪崩能量(注2)
Single Pulsed Avalanche
Energy(note 2)
mJ
A
雪崩电流(注1)
Avalanche Current(note 1)
重复雪崩能量(注1)
Repetitive Avalanche Current EAR
(note 1)
16.7
mJ
二极管反向恢复最大电压变化
速率(注3)
dv/dt
4.5
V/ns
Peak Diode Recovery dv/dt
(note 3)
PD
167
58
W
TC=25℃
-Derate
above
25℃
耗散功率
Power Dissipation
1.43
0.48
W/℃
最高结温及存储温度
Operating and Storage
Temperature Range
TJ,TSTG
-55~+150
℃
℃
引线最高焊接温度
Maximum Lead Temperature
for Soldering Purposes
*漏极电流由最高结温限制
TL
300
*Drain current limited by maximum junction temperature
版本:201510C
2/11
R
JCS6N90H
电特性 ELECTRICAL CHARACTERISTICS
项
目
符 号
测试条件
最小 典型 最大 单位
Parameter
关态特性 Off –Characteristics
漏-源击穿电压
Symbol
Tests conditions
Min Typ Max Units
BVDSS
ID=250μA, VGS=0V
900
-
-
-
-
V
Drain-Source Voltage
击穿电压温度特性
ΔBVDSS/Δ ID=250μA, referenced to
Breakdown Voltage Temperature
Coefficient
1.05
V/℃
TJ
25℃
VDS=900V,VGS=0V,
-
-
-
-
1
μA
μA
零栅压下漏极漏电流
TC=25℃
IDSS
Zero Gate Voltage Drain Current
VDS=720V,
TC=125℃
10
正向栅极体漏电流
Gate-body leakage current,
forward
IGSSF
VDS=0V, VGS =30V
-
-
-
-
100 nA
-100 nA
反向栅极体漏电流
Gate-body leakage current,
reverse
IGSSR
VDS=0V, VGS =-30V
通态特性On-Characteristics
阈值电压
VGS(th)
RDS(ON)
gfs
VDS = VGS , ID=250μA
3.0
-
-
5.0
V
Ω
S
Gate Threshold Voltage
静态导通电阻
Static Drain-Source
On-Resistance
VGS =10V , ID=3.0A
2.6 3.0
正向跨导
VDS = 40V, ID=3.0A(note 4) -
5.6
-
Forward Transconductance
动态特性Dynamic Characteristics
输入电容
VDS=25V,
GS =0V,
f=1.0MHZ
Ciss
Coss
Crss
-
1320 1716 pF
105 136 pF
Input capacitance
输出电容
V
-
-
Output capacitance
反向传输电容
9
12
pF
Reverse transfer capacitance
版本:201510C
3/11
R
JCS6N90H
电特性 ELECTRICAL CHARACTERISTICS
开关特性Switching Characteristics
延迟时间Turn-On delay time
上升时间Turn-On rise time
延迟时间Turn-Off delay time
下降时间Turn-Off Fall time
栅极电荷总量Total Gate Charge
栅-源电荷Gate-Source charge
栅-漏电荷Gate-Drain charge
td(on)
tr
VDD=450V,ID=6A,RG=25Ω
(note 4,5)
-
-
-
-
-
-
-
34 75
ns
85 155 ns
56 113 ns
59 118 ns
td(off)
tf
VDS =720V ,
Qg
14 19
nC
nC
nC
ID=6A
Qgs
Qgd
5
6
-
-
VGS =10V (note 4,5)
漏-源二极管特性及最大额定值 Drain-Source Diode Characteristics and Maximum Ratings
正向最大连续电流
Maximum Continuous Drain
-Source Diode Forward Current
正向最大脉冲电流
IS
-
-
-
-
-
-
6
A
A
V
Maximum Pulsed Drain-Source
Diode Forward Current
正向压降
ISM
24
1.4
Drain-Source Diode Forward
Voltage
VSD
VGS=0V,
IS=6A
反向恢复时间
trr
-
-
625
-
-
ns
Reverse recovery time
反向恢复电荷
VGS=0V, IS=6A
dIF/dt=100A/μs
(note 4)
Qrr
6.71
μC
Reverse recovery charge
热特性THERMAL CHARACTERISTIC
最大
项
目
符 号
单 位
Max
Parameter
Symbol
Unit
JCS6N90CH/BH
JCS6N90FH
结到管壳的热阻
Rth(j-c)
Rth(j-A)
0.78
62.5
2.3
℃/W
℃/W
Thermal Resistance, Junction to Case
结到环境的热阻
62.5
Thermal Resistance, Junction to Ambient
Notes:
注释:
1:Pulse width limited by maximum junction
1:脉冲宽度由最高结温限制
temperature
2:L=2.0mH, IAS=6A, VDD=50V, RG=25 Ω,起始结温
TJ=25℃
2:L=2.0mH, IAS=6A, VDD=50V, RG=25 Ω,Starting
TJ=25℃
3:ISD ≤6A,di/dt ≤200A/μs,VDD≤BVDSS,起始结温
TJ=25℃
3:ISD ≤6A,di/dt ≤200A/μs,VDD≤BVDSS, Starting
TJ=25℃
4:脉冲测试:脉冲宽度≤300μs,占空比≤2%
5:基本与工作温度无关
4:Pulse Test:Pulse Width ≤300μs,Duty Cycle≤2%
5:Essentially independent of operating temperature
版本:201510C
4/11
R
JCS6N90H
特征曲线 ELECTRICAL CHARACTERISTICS (curves)
Transfer Characteristics
On-Region Characteristics
10
25℃
150℃
1
Notes:
1.250μs pulse test
2.VDS=40V
0.1
2
4
6
8
10
VG S [V]
On-Resistance Variation vs.
Drain Current and Gate Voltage
Body Diode Forward Voltage Variation
vs. Source Current and Temperature
10
150℃
1
25℃
Notes:
1. 250μs pulse test
2. VGS=0V
0.1
0.2 0.3 0.4 0.5 0.6 0.7 0.8 0.9 1.0 1.1 1.2 1.3 1.4 1.5
Gate Charge Characteristics
Capacitance Characteristics
2x103
C =C +C (C =shorted)
iss
gs
gd ds
C =C +C
gd
oss
ds
C =C
rss
gd
C
iss
1x103
C
oss
C
rss
0
-1
0
10
1
10
10
VDS Drain-Source Voltage [V]
版本:201510C
5/11
R
JCS6N90H
特征曲线 ELECTRICAL CHARACTERISTICS (curves)
On-Resistance Variation
vs. Temperature
Breakdown Voltage Variation
vs. Temperature
1.2
1.1
1.0
0.9
Notes:
1. V G S = 0V
2. I D = 250μA
0.8
-75
-50
-25
0
25
50
75
100
125
150
T j [℃ ]
Maximum Safe Operating Area
JCS6N90CH
Maximum Safe Operating Area
JCS6N90FH
Operation in This Area
is Limited by RDS(ON)
102
10μs
100μs
101
100
1ms
10ms
100ms
DC
Note:
1 TC=25℃
2 T =150℃
-1
J
10
3 Single Pulse
2
10
3
10
100
101
VDS Drain-Source Voltage [V]
Maximum Drain Current
vs. Case Temperature
6
4
2
0
25
50
75
100
125
150
TC Case Temperature [℃]
版本:201510C
6/11
R
JCS6N90H
特征曲线 ELECTRICAL CHARACTERISTICS (curves)
Transient Thermal Response Curve
JCS6N90CH
D = 0 .5
1
0 .2
0 .1
N o t e s :
0 .0 5
1
2
3
Z
( t ) = 0 .7 8 ℃ /W
M
a x
( t )
0 .1
θ
J C
D u t y F a c t o r , D = t /t
1
2
0 .0 2
0 .0 1
T
- T = P
* Z
D M
J M
c
θ
J C
P
D
M
s in g le p u ls e
t
0 .0 1
1
t
2
1 E - 5
1 E - 4
1 E - 3
0 .0 1
0 .1
1
1 0
t1 S q u a r e W a v e P u ls e D u r a tio n [s e c ]
Transient Thermal Response Curve
JCS6N90FH
版本:201510C
7/11
R
JCS6N90H
外形尺寸 PACKAGE MECHANICAL DATA
TO-220C
单位Unit:mm
版本:201510C
8/11
R
JCS6N90H
外形尺寸 PACKAGE MECHANICAL DATA
TO-220MF
单位Unit:mm
版本:201510C
9/11
R
JCS6N90H
外形尺寸 PACKAGE MECHANICAL DATA
TO-262
单位Unit:mm
版本:201510C
10/11
R
JCS6N90H
注意事项
NOTE
1.吉林华微电子股份有限公司的产品销售分
为直销和销售代理,无论哪种方式,订货
时请与公司核实。
1. Jilin Sino-microelectronics co., Ltd sales its
product either through direct sales or sales
agent , thus, for customers, when ordering ,
please check with our company.
2.购买时请认清公司商标,如有疑问请与公
2. We strongly recommend customers check
carefully on the trademark when buying our
product, if there is any question, please
don’t be hesitate to contact us.
司本部联系。
3.在电路设计时请不要超过器件的绝对最大
3. Please do not exceed the absolute
maximum ratings of the device when circuit
designing.
额定值,否则会影响整机的可靠性。
4.本说明书如有版本变更不另外告知
4. Jilin Sino-microelectronics co., Ltd reserves
the right to make changes in this
specification sheet and is subject to
change without prior notice.
CONTACT
JILIN SINO-MICROELECTRONICS CO., LTD.
联系方式
吉林华微电子股份有限公司
ADD: No.99 Shenzhen Street, Jilin City, Jilin
Province, China.
公司地址:吉林省吉林市深圳街99 号
Post Code: 132013
邮编:132013
Tel: 86-432-64678411
总机:86-432-64678411
传真:86-432-64665812
网址:www.hwdz.com.cn
Fax:86-432-64665812
Web Site:www.hwdz.com.cn
MARKET DEPARTMENT
ADD: No.99 Shenzhen Street, Jilin City, Jilin
Province, China.
市场营销部
地址:吉林省吉林市深圳街99 号
Post Code: 132013
邮编:132013
Tel:
86-432-64675588
64675688
电话: 86-432-64675588
64675688
64678411-3098/3099
Fax: 86-432-64671533
64678411-3098/3099
传真: 86-432-64671533
版本:201510C
11/11
相关型号:
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