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KF5N65D_15 [KEC]

N CHANNEL MOS FIELD EFFECT TRANSISTOR;
KF5N65D_15
型号： KF5N65D_15
厂家： KEC(KOREA ELECTRONICS)    KEC(KOREA ELECTRONICS)
描述：

N CHANNEL MOS FIELD EFFECT TRANSISTOR
文件： 总6页 (文件大小：487K)
中文：  中文翻译
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KF5N65D/I  
SEMICONDUCTOR  
N CHANNEL MOS FIELD  
EFFECT TRANSISTOR  
TECHNICAL DATA  
General Description  
KF5N65D  
This planar stripe MOSFET has better characteristics, such as fast  
switching time, fast reverse recovery time, low on resistance, low gate  
charge and excellent avalanche characteristics. It is mainly suitable for  
electronic ballast and switching mode power supplies.  
A
C
K
DIM MILLIMETERS  
L
D
B
_
A
B
C
D
E
6.60 + 0.20  
_
6.10+0.20  
_
5.34 + 0.30  
_
0.70+0.20  
_
2.70 + 0.15  
FEATURES  
_
2.30+0.10  
F
0.96 MAX  
0.90 MAX  
G
H
J
· VDSS= 650V, ID= 4.4A  
H
J
_
1.80+0.20  
· Drain-Source ON Resistance : RDS(ON)=1.75Ω (Max) @VGS = 10V  
· Qg(typ) = 14.5nC  
E
_
2.30+0.10  
K
L
G
N
_
0.50 + 0.10  
_
F
F
M
M
N
O
0.50+0.10  
0.70 MIN  
0.1 MAX  
1
2
3
MAXIMUM RATING (Tc=25℃)  
O
CHARACTERISTIC  
Drain-Source Voltage  
Gate-Source Voltage  
@TC=25℃  
SYMBOL  
VDSS  
RATING  
650  
UNIT  
V
VGSS  
V
±30  
4.4  
DPAK (1)  
ID  
Drain Current  
@TC=100℃  
2.7  
A
KF5N65I  
IDP  
Pulsed (Note1)  
15  
A
C
H
J
Single Pulsed Avalanche Energy  
(Note 2)  
EAS  
150  
3.8  
4.5  
mJ  
mJ  
Repetitive Avalanche Energy  
(Note 1)  
EAR  
DIM MILLIMETERS  
_
A
B
C
D
E
F
6.6  
+
0.2  
Peak Diode Recovery dv/dt  
(Note 3)  
dv/dt  
V/ns  
_
6.1 0.2  
+
M
_
5.34 0.3  
+
P
_
0.7 0.2  
+
69.4  
0.56  
W
W/℃  
℃
Tc=25℃  
N
Drain Power  
Dissipation  
PD  
_
9.3 0.3  
+
_
Derate above 25℃  
2.3 0.2  
+
_
0.76 0.1  
G
H
J
+
Tj  
Maximum Junction Temperature  
Storage Temperature Range  
150  
G
_
2.3 0.1  
+
_
L
0.5 0.1  
+
F
F
Tstg  
-55∼ 150  
℃
_
K
L
M
N
P
1.8 0.2  
+
_
+
0.5  
0.1  
Thermal Characteristics  
_
1.0 0.1  
+
0.96 MAX  
_
1
2
3
RthJC  
RthJA  
Thermal Resistance, Junction-to-Case  
1.8  
℃/W  
℃/W  
1.02 0.3  
+
Thermal Resistance, Junction-to-  
Ambient  
110  
PIN CONNECTION  
IPAK(1)  
D
G
S
2011. 10. 27  
Revision No : 0  
1/6  
KF5N65D/I  
ELECTRICAL CHARACTERISTICS (Tc=25℃)  
CHARACTERISTIC  
SYMBOL  
TEST CONDITION  
MIN.  
TYP. MAX. UNIT  
Static  
BVDSS  
Breakdown Voltage Temperature Coefficient ΔBVDSS/ΔTj ID=250㎂, Referenced to 25℃  
Drain-Source Breakdown Voltage  
ID=250㎂ , VGS=0V  
650  
-
0.7  
-
-
-
V
V/℃  
㎂
-
-
IDSS  
Vth  
VDS=650V, VGS=0V,  
VDS=VGS, ID=250㎂  
VGS=±30V, VDS=0V  
VGS=10V, ID=2.2A  
Drain Cut-off Current  
Gate Threshold Voltage  
Gate Leakage Current  
Drain-Source ON Resistance  
Dynamic  
10  
2.5  
-
-
4.5  
±100  
1.75  
V
IGSS  
-
nA  
RDS(ON)  
-
1.5  
Ω
Qg  
Qgs  
Qgd  
td(on)  
tr  
Total Gate Charge  
-
-
-
-
-
-
-
-
-
-
14.5  
3.0  
5.8  
35  
-
-
-
-
-
-
-
-
-
-
VDS=520V, ID=5A  
Gate-Source Charge  
Gate-Drain Charge  
nC  
VGS=10V  
(Note4,5)  
(Note4,5)  
Turn-on Delay time  
Turn-on Rise time  
VDD=325V  
ID=5A  
35  
ns  
td(off)  
tf  
Turn-off Delay time  
Turn-off Fall time  
65  
RG=25Ω  
25  
Ciss  
Coss  
Crss  
Input Capacitance  
720  
72  
VDS=25V, VGS=0V, f=1.0MHz  
Output Capacitance  
Reverse Transfer Capacitance  
Source-Drain Diode Ratings  
pF  
7.2  
IS  
ISP  
VSD  
trr  
Continuous Source Current  
Pulsed Source Current  
-
-
-
-
-
-
-
5.5  
22  
1.4  
-
VGS<Vth  
A
IS=4.4A, VGS=0V  
Diode Forward Voltage  
Reverse Recovery Time  
Reverse Recovery Charge  
-
V
ns  
300  
1.8  
IS=5.0A, VGS=0V,  
dIs/dt=100A/㎲  
Qrr  
-
μC  
Note 1) Repetivity rating : Pulse width limited by junction temperature.  
Note 2) L=12.4mH, IS=5.0A, VDD=50V, RG=25Ω , Starting Tj=25℃.  
Note 3) IS≤ 5A, dI/dt≤ 100A/㎲, VDD≤ BVDSS, Starting Tj=25℃.  
Note 4) Pulse Test : Pulse width ≤ 300㎲, Duty Cycle≤ 2%.  
Note 5) Essentially independent of operating temperature.  
Marking  
1
1
KF5N65  
001  
KF5N65  
001  
I
2
2
D
1
2
PRODUCT NAME  
LOT NO  
2011. 10. 27  
Revision No : 0  
2/6  
KF5N65D/I  
Fig1. I - V  
Fig2. I - V  
D
D
GS  
DS  
100  
10  
V
=25V  
DS  
101  
V
=10V, 7V  
GS  
100 C  
25 C  
100  
V
=5V  
GS  
1
10-1  
0.1  
0.1  
10  
2
4
6
8
10  
1
100  
Drain - Source Voltage VDS (V)  
Gate - Source Voltage VGS (V)  
Fig3. BV  
- T  
Fig4. R  
- I  
DSS  
j
DS(ON) D  
1.2  
1.1  
1.0  
0.9  
0.8  
6.0  
5.0  
4.0  
3.0  
2.0  
1.0  
0
VGS = 0V  
IDS = 250  
V
=7V  
GS  
V
=10V  
GS  
100  
-100  
-50  
0
50  
150  
0
1
2
3
4
5
6
7
8
Junction Temperature Tj (  
)
Drain Current ID (A)  
C
Fig6. R  
- T  
j
DS(ON)  
Fig5. I - V  
S
SD  
3.0  
2.5  
2.0  
1.5  
1.0  
0.5  
0.0  
V
I
=10V  
= 2.2A  
GS  
DS  
101  
100  
10-1  
150 C  
25 C  
-100  
-50  
0
50  
100  
150  
0.2  
0.4  
0.6  
0.8  
1.0  
1.2  
1.4  
(V)  
Junction Temperature T (  
)
C
Source - Drain Voltage VSD  
j
2011. 10. 27  
Revision No : 0  
3/6  
KF5N65D/I  
Fig 7. C - V  
DS  
Fig8. Q - V  
g
GS  
104  
103  
12  
10  
8
ID=5A  
C
iss  
V
= 520V  
DS  
102  
101  
6
C
oss  
4
2
C
rss  
0
100  
3
9
12  
21  
24  
0
6
15  
18  
(nC)  
0
5
10  
15  
20  
25  
30  
35  
40  
Gate - Charge  
Q
g
Drain - Source Voltage VDS (V)  
Fig9. Safe Operation Area  
Fig10. I - T  
D
j
102  
101  
100  
6
5
4
3
2
1
0
Operation in this  
area is limited by RDS(ON)  
10µs  
100µs  
1ms  
10ms  
10-1  
102  
DC  
T = 25  
C
c
C
T = 150  
j
Single pulse  
102  
103  
100  
101  
50  
75  
125  
150  
0
25  
100  
Drain - Source Voltage V  
(V)  
DS  
Junction Temperature T  
(
)
C
j
Fig11. Transient Thermal Response Curve  
101  
100  
Duty=0.5  
P
DM  
t
1
10-1  
t
2
- Duty Factor, D= t1/t2  
Tj(max) - Tc  
- RthJC  
=
PD  
10-2  
10-5  
10-4  
10-3  
10-2  
10-1  
100  
101  
TIME (sec)  
2011. 10. 27  
Revision No : 0  
4/6  
KF5N65D/I  
2011. 10. 27  
Revision No : 0  
5/6  
KF5N65D/I  
Fig15. Source - Drain Diode Reverse Recovery and dv /dt  
Body Diode Forword Current  
DUT  
V
DS  
I
SD  
(DUT)  
di/dt  
I
F
I
RM  
I
S
Body Diode Reverse Current  
Body Diode Recovery dv/dt  
0.5  
V
DSS  
V
DS  
(DUT)  
driver  
VSD  
V
DD  
V
GS  
10V  
Body Diode Forword Voltage drop  
2011. 10. 27  
Revision No : 0  
6/6  

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