KMB7D0NP30QA_11 [KEC]
N and P-Ch Trench MOSFET; N和P沟道沟槽MOSFET
| 型号： | KMB7D0NP30QA_11 |
| 厂家： | 
KEC(KOREA ELECTRONICS) |
| 描述： | N and P-Ch Trench MOSFET |
| 文件： | 总9页 (文件大小：1306K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
SEMICONDUCTOR
KMB7D0NP30QA
N and P-Ch Trench MOSFET
TECHNICAL DATA
General Description
Switching regulator and DC-DC Converter applications.
It’s mainly suitable for Back-light Inverter.
FEATURES
· N-Channel
: VDSS=30V, ID=7A.
: RDS(ON)=23.5mΩ (Max.) @ VGS=10V
: RDS(ON)=39mΩ (Max.) @ VGS=4.5V
· P-Channel
: VDSS=-30V, ID=-5A.
: RDS(ON)=45.5mΩ (Max.) @ VGS=-10V
: RDS(ON)=80mΩ (Max.) @ VGS=-4.5V
· Super High Dense Cell Design.
· Reliable and rugged.
MAXIMUM RATING (Ta=25℃)
CHARACTERISTIC
Drain-Source Voltage
SYMBOL
VDSS
VGSS
ID*
N-Ch
30
P-Ch
-30
UNIT
V
Gate-Source Voltage
V
±20
7
±20
-5
DC
Drain Current
A
Pulsed (note1)
29
-20
-1.7
IDP
IS
Source-Drain Diode Current
Drain Power Dissipation
1.7
A
W
PD*
Tj
2
Maximum Junction Temperature
Storage Temperature Range
150
℃
Tstg
-55∼ 150
℃
RthJA
*
Thermal Resistance, Junction to Ambient
Note : *Sorface Mounted on FR4 Board
62.5
℃/W
PIN CONNECTION (TOP VIEW)
2011. 3. 18
Revision No : 3
1/9
KMB7D0NP30QA
ELECTRICAL CHARACTERISTICS (Ta=25℃)
CHARACTERISTIC
SYMBOL
TEST CONDITION
MIN.
TYP. MAX. UNIT
Static
N-Ch
P-Ch
N-Ch
P-Ch
N-Ch
P-Ch
N-Ch
P-Ch
N-Ch
P-Ch
N-Ch
P-Ch
N-Ch
P-Ch
N-Ch
P-Ch
N-Ch
P-Ch
30
-
-
-
-
ID=250μA, VGS=0V,
BVDSS
Drain-Source Breakdown Voltage
Drain Cut-off Current
V
-30
ID=-250μA, VGS=0V,
VGS=0V, VDS=24V
VGS=0V, VDS=-24V
-
-
1
IDSS
μA
nA
V
-
-
-1
-
-
±100
IGSS
Gate Leakage Current
VGS=±20V, VDS=0V
-
-
±100
3
1.0
-
VDS=VGS, ID=250μA
VDS=VGS, ID=-250μA
VGS=10V, ID=7A
VGS=-10V, ID=-5A
VGS=4.5V, ID=6A
VGS=-4.5V, ID=-4A
VGS=4.5V, VDS=5V
VGS=-10V, VDS=-5V
VDS=5V, ID=6.6A
VDS=-5V, ID=-5A
IS=1.7A, VGS=0V
IS=-1.7A, VGS=0V
Vth
Gate Threshold Voltage
-1.0
-
-3
-
-
18
35
30
62
-
23.5
45.5
39
80
-
*
Drain-Source ON Resistance
RDS(ON)
mΩ
-
-
20
-20
-
*
ON State Drain Current
A
S
ID(ON)
-
-
10
9
-
*
Forward Transconductance
gfs
-
-
-
0.7
-0.8
1.2
-1.2
Source-Drain Diode Forward
Voltage
*
V
VSD
-
2011. 3. 18
Revision No : 3
2/9
KMB7D0NP30QA
ELECTRICAL CHARACTERISTICS (Ta=25℃)
CHARACTERISTIC
Dynamic
SYMBOL
TEST CONDITION
MIN.
TYP. MAX. UNIT
N-Ch
: VDS=15V, ID=6.6A,
N-Ch
P-Ch
N-Ch
P-Ch
-
-
-
-
16.4
13
20.5
16
V
GS=10V
(Fig.1)
(Fig.3)
P-Ch
: VDS=-15V, ID=-5A,
V
GS=-10V
Qg
Total Gate Charge
N-Ch
: VDS=15V, ID=6.6A,
7.2
9
V
GS=4.5V
(Fig.1)
(Fig.3)
nC
P-Ch
: VDS=-15V, ID=-5A,
6.25
7.8
V
GS=-4.5V
N-Ch
: VDS=15V, ID=6.6A,
N-Ch
P-Ch
N-Ch
-
-
-
4
-
-
-
Qgs
Qgd
Gate-Source Charge
Gate-Drain Charge
2.6
2.6
V
GS=10V
(Fig.1)
(Fig.3)
P-Ch
: VDS=-15V, ID=-5A,
V
GS=-10V
P-Ch
N-Ch
P-Ch
N-Ch
P-Ch
N-Ch
P-Ch
N-Ch
P-Ch
N-Ch
-
-
-
-
-
-
-
-
-
-
2.9
7.4
-
-
-
-
-
-
-
-
-
-
td(on)
Turn-on Delay time
Turn-on Rise time
Turn-off Delay time
Turn-off Fall time
4.7
N-Ch
: VDD=15V, ID=6.6A,
27.7
7.8
tr
V
GS=10V, RG=3Ω
(Fig.2)
ns
P-Ch
12.2
47.2
7.6
: VDD=-15V, VGS=-10V,
RG=3Ω , RL=2.7Ω
td(off)
(Fig.4)
tf
22.6
742
Ciss
Coss
Crss
Input Capacitance
P-Ch
N-Ch
P-Ch
N-Ch
P-Ch
-
-
-
-
-
820
126
137
76
-
-
-
-
-
N-Ch
: VDS=15V, VGS=0V, f=1.0MHz
P-Ch
: VDS=-15V, VGS=0V, f=1.0MHz
Output Capacitance
pF
Reverse transfer Capacitance
89
Note 1>* Pulse test : Pulse width≤ 300㎲, Duty Cycle≤ 2%.
2011. 3. 18
Revision No : 3
3/9
KMB7D0NP30QA
2011. 3. 18
Revision No : 3
4/9
KMB7D0NP30QA
2011. 3. 18
Revision No : 3
5/9
KMB7D0NP30QA
2011. 3. 18
Revision No : 3
6/9
KMB7D0NP30QA
2011. 3. 18
Revision No : 3
7/9
KMB7D0NP30QA
2011. 3. 18
Revision No : 3
8/9
KMB7D0NP30QA
2011. 3. 18
Revision No : 3
9/9
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