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KMB8D0P30QA [KEC]

P-Ch Trench MOSFET; P沟道沟槽MOSFET
KMB8D0P30QA
型号： KMB8D0P30QA
厂家： KEC(KOREA ELECTRONICS)    KEC(KOREA ELECTRONICS)
描述：

P-Ch Trench MOSFET
P沟道沟槽MOSFET
文件： 总4页 (文件大小：56K)
中文：  中文翻译
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SEMICONDUCTOR  
KMB8D0P30QA  
TECHNICAL DATA  
P-Ch Trench MOSFET  
GENERAL DESCRIPTION  
This Trench MOSFET has better characteristics, such as fast switching time, low  
on resistance, low gate charge and excellent avalanche characteristiscs. It is mainly  
suitable for Load Switch and Battery pack.  
H
T
P
D
L
G
FEATURES  
A
VDSS=-30V, ID=-8A.  
DIM MILLIMETERS  
A
B1  
B2  
D
_
+
4.85 0.2  
Drain to Source On Resistance.  
RDS(ON)=20m (Max.) @ VGS=-10V  
RDS(ON)=35m (Max.) @ VGS=-4.5V  
_
3.94 + 0.2  
_
6.02 0.3  
+
8
1
5
4
_
0.4 + 0.1  
G
0.15+0.1/-0.05  
B1 B2  
_
1.63+ 0.2  
H
_
L
0.65 0.2  
+
P
1.27  
MOSFET Maximum Ratings (Ta=25 Unless otherwise noted)  
T
0.20+0.1/-0.05  
CHARACTERISTIC  
Drain to Source Voltage  
SYMBOL RATING UNIT  
VDSS  
VGSS  
ID  
30  
20  
V
V
A
A
W
Gate to Source Voltage  
-8  
-40  
FLP-8  
DC@Ta=25  
Pulsed  
(Note 1)  
(Note 1)  
Drain Current  
IDP  
PD  
Drain Power Dissipation  
2.5  
@Ta=25  
Tj  
Maximum Junction Temperature  
Storage Temperature Range  
150  
Tstg  
RthJA  
-55~150  
50  
Thermal Resistance, Junction to Ambient (Note 1)  
/W  
KMB8D0P  
30QA  
Note1) Surface Mounted on 1″ 1″FR4 Board, t 10sec.  
PIN CONNECTION (TOP VIEW)  
8
S
S
S
G
8
7
6
1
2
3
1
2
3
4
D
D
7
6
5
D
D
5
4
2009. 6. 15  
Revision No : 0  
1/4  
KMB8D0P30QA  
ELECTRICAL CHARACTERISTICS (Ta=25 ) UNLESS OTHERWISE NOTED  
CHARACTERISTIC  
SYMBOL  
TEST CONDITION  
MIN.  
TYP. MAX. UNIT  
Static  
BVDSS  
IDSS  
Drain to Source Breakdown Voltage  
Drain Cut-off Current  
-30  
-
-
-
V
VGS=0V, ID=-250 A  
VGS=0V, VDS=-24V  
VGS 20V, VDS=0V  
-
-1  
A
IGSS  
Gate to Source Leakage Current  
Gate to Source Threshold Voltage  
-
-
nA  
V
=
100  
-3.0  
20  
Vth  
-1.0  
-
VDS=VGS, ID=-250 A  
VGS=-10V, ID=-8A  
VGS=-4.5V, ID=-5A  
VDS=-5V, ID=-8A  
(Note2)  
(Note2)  
(Note2)  
-
-
-
15  
25  
6
RDS(ON)  
gfs  
Drain to Source On Resistance  
m
35  
Forward Transconductance  
Dynamic  
-
S
Ciss  
Coss  
Crss  
Input Capaclitance  
-
-
-
-
-
-
-
-
-
-
-
1371  
295  
176  
28.2  
15.0  
5.0  
-
-
-
-
-
-
-
-
-
-
-
VDS=-15V, VGS=0V, f=1MHz (Note2)  
Ouput Capacitance  
Reverse Transfer Capacitance  
pF  
VGS=10V  
Total Gate Charge  
Qg  
VGS=4.5V  
VDS=-15V, VGS=-10V, ID=-8A  
(Note2)  
nC  
Qgs  
Qgd  
td(on)  
tr  
Gate to Source Charge  
Gate to Drain Charge  
6.4  
Turn-On Delay Time  
11.2  
5.8  
VDS=-15V, VGS=-10V  
ID=-8A, RG=1.6  
Turn-On Rise Time  
ns  
V
(Note2)  
(Note2)  
td(off)  
tf  
Turn-Off Delay Time  
65.0  
25.0  
Turn-Off Fall Time  
Source to Drain Diode Ratings  
Source to Drain Forward Voltage  
VSD  
VGS=0V, IS=-1.7A  
-
-0.75  
-1.2  
Note2) Pulse Test : Pulse Width 300 , Duty Cycle 2%  
2009. 6. 15  
Revision No : 0  
2/4  
KMB8D0P30QA  
Fig2. R  
- I  
D
DS(on)  
Fig1. I - V  
D
DS  
50  
-40  
-30  
-20  
-10  
0
-5.0V  
VGS=-10V  
-4.5V  
-4.0V  
40  
30  
VGS=-4.5V  
VGS=-10V  
20  
10  
0
-3.5V  
-3.0V  
0
-10  
-20  
-30  
-40  
0
-0.5  
-1.0  
-1.5  
-2.0  
-2.5  
-3.0  
Drain to Source Voltage VDS (V)  
Drain Current ID (A)  
Fig3. I - V  
D
GS  
Fig4. R  
- T  
j
DS(ON)  
2.0  
1.8  
1.6  
1.4  
1.2  
1.0  
0.8  
0.6  
0.4  
0.2  
-40  
-30  
-20  
-10  
0
VGS=-10V, ID=-19A  
VGS=-4.5V, ID=-18A  
Tj=150 C  
C
Tj=25  
C
Tj=-55  
-3  
0
-1  
-2  
-4  
-5  
-75 -50 -25  
0
25 50 75 100 125 150 175  
Junction Temperature Tj (  
)
Gate to Source Voltage VGS (V)  
C
Fig6. I - V  
S
SD  
Fig5. V - T  
th  
j
102  
101  
1.6  
1.4  
1.2  
1.0  
0.8  
0.6  
0.4  
0.2  
V
DS = VGS, ID = -250µA  
Tj=150 C  
Tj=25  
C
C
Tj=-55  
100  
10-1  
10-2  
-75 -50 -25  
0
25 50 75 100 125 150 175  
0.2  
0.4  
0.6  
0.8  
1.0  
1.2  
(V)  
Junction Temperature Tj (  
)
Source to Drain Voltage VSD  
C
2009. 6. 15  
Revision No : 0  
3/4  
KMB8D0P30QA  
Fig7. R  
- V  
Fig8. C - V  
DS  
DS(ON)  
GS  
104  
50  
40  
30  
20  
10  
0
f=1MHz  
ID=-8A  
C
iss  
103  
102  
101  
C
Tj=150  
C
C
oss  
rss  
C
Tj=25  
-2  
-4  
-6  
-8  
-10  
0
-5  
-10  
-15  
-20  
-25  
-30  
Gate to Source Voltage VGS (V)  
Drain to Source Voltage VDS (V)  
Fig9. V - Q  
GS  
g
Fig10. Safe Operation Area  
-102  
-101  
-100  
-10-1  
-10-2  
-10  
-8  
-6  
-4  
-2  
0
ID = -8A  
100us  
1ms  
10ms  
100ms  
DC  
VGS= -10V  
SINGLE PULSE  
C
TA= 25  
-10-2  
-10-1  
Drain to Source Voltage VDS (V)  
-100  
-101  
-102  
0
10  
20  
30  
(nC)  
40  
Gate to Charge  
Q
g
Fig11. Transient Thermal Response Curve  
101  
100  
10-1  
10-2  
10-3  
0.5  
0.2  
0.1  
0.05  
0.02  
0.01  
P
DM  
t
Single Pulse  
1
t
2
RthJA=63.9 C/W  
102  
10-4  
10-3  
10-2  
Square Wave Pulse Duration tW(sec)  
10-1  
101  
103  
1
2009. 6. 15  
Revision No : 0  
4/4  

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