KTA1049_08 [KEC]
EPITAXIAL PLANAR PNP TRANSISTOR; 外延平面PNP晶体管
| 型号： | KTA1049_08 |
| 厂家： | 
KEC(KOREA ELECTRONICS) |
| 描述： | EPITAXIAL PLANAR PNP TRANSISTOR |
| 文件： | 总2页 (文件大小：47K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
SEMICONDUCTOR
KTA1049
EPITAXIAL PLANAR PNP TRANSISTOR
TECHNICAL DATA
GENERAL PURPOSE APPLICATION.
A
C
FEATURES
DIM MILLIMETERS
S
Low Collector-Emitter Saturation Voltage
: VCE(sat)=-2.0V(Max.).
_
10.0+0.3
A
_
15.0+0.3
B
C
E
_
2.70 0.3
+
D
E
F
0.76+0.09/-0.05
_
Complementary to KTC2028.
Φ3.2 0.2
+
_
3.0+0.3
_
12.0 0.3
+
G
H
0.5+0.1/-0.05
_
13.6 0.5
+
J
K
L
L
R
_
3.7 0.2
+
L
1.2+0.25/-0.1
1.5+0.25/-0.1
MAXIMUM RATING (Ta=25
CHARACTERISTIC
)
M
M
N
P
D
D
_
SYMBOL RATING
UNIT
V
2.54+0.1
_
6.8 0.1
+
_
+
4.5 0.2
Q
R
VCBO
VCEO
VEBO
IC
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Collector Current
-100
-100
-5
_
2.6+0.2
N
N
H
S
0.5 Typ
V
V
1. BASE
-5
A
3
2
1
2. COLLECTOR
3. EMITTER
IB
Base Current
-0.5
A
PC
30
W
Collector Power Dissipation (Tc=25
Junction Temperature
)
Tj
150
TO-220IS
Tstg
Storage Temperature Range
-55 150
ELECTRICAL CHARACTERISTICS (Ta=25
)
CHARACTERISTIC
Collector Cut-off Current
SYMBOL
ICBO
TEST CONDITION
VCB=-100V, IE=0
MIN.
TYP.
MAX.
UNIT
-
-
-
-100
-1
A
mA
V
IEBO
VEB=-5V, IC=0
IC=-50mA, IB=0
Emitter Cut-off Current
-
V(BR)CEO
Collector-Emitter Breakdown Voltage
-100
-
-
hFE(1) (Note) VCE=-5V, IC=-1A
70
20
-
-
240
-
DC Current Gain
hFE(2)
VCE(sat)
VBE
VCE=-5V, IC=-4A
IC=-4A, IB=-0.4A
-
Collector-Emitter Saturation Voltage
Base-Emitter Voltage
-
-2.0
-1.5
-
V
V
VCE=-5V, IC=-4A
VCE=-5V, IC=-1A
VCB=-10V, IE=0, f=1MHz
-
-
fT
Transition Frequency
-
30
90
MHz
pF
Cob
Collector Output Capacitance
-
-
Note : hFE(1) Classification O:70 140 , Y:120 240
2008. 6. 11
Revision No : 3
1/2
KTA1049
VCE(sat) - I C
I C - VCE
2
1
-5
-4
-3
-2
-1
-200
-250
COMMON EMITTER
/I =10
-150
I
C
B
-100
-50
-0.5
-0.3
Tc=75 C
I
=-20mA
B
-0.1
Tc=25 C
Tc=-25 C
COMMON EMITTER
Tc=25 C
-0.05
-0.03
0
0
-0.01
-0.03
-0.1
-0.3
-1
-3 -5
0
-1
-2
-3
-4
-5
-6
-7
COLLECTOR CURRENT I (A)
C
COLLECTOR EMITTER VOLTAGE V
(V)
CE
SAFE OPERATING AREA
hFE - I C
-20
-10
500
300
I
MAX(PULSED)
MAX
C
Tc=75 C
Tc=25 C
I
C
(CONTINUOUS)
-5
-3
1s
100
Tc=-25 C
50
30
-1
COMMON EMITTER
-0.5
-0.3
V
CE
=-5V
SINGLE NONREPETITIVE
PULSE Tc=25 C
10
-0.01
CURVES MUST BE DERATED
LINEARLY WITH INCREASE
IN TEMPERATURE
-0.03
-0.1
-0.3
-1
-3 -5
COLLECTOR CURRENT I (A)
C
-0.1
-3
-10
-30
-100
-200
COLLECTOR-EMITTER VOLTAGE V
(V)
CE
Pc - Ta
50
40
30
Tc=Ta
INFINITE HEAT SINK
20
10
0
0
25
50
75
100
125
150
AMBIENT TEMPERATURE Ta ( C)
2008. 6. 11
Revision No : 3
2/2
相关型号：
KTA1073T
EPITAXIAL PLANAR PNP TRANSISTOR(HIGH VOLTAGE CONTROL, PLASMA DISPLAY, NIXIE TUBE DRIVER,CATHODE RAY TUBE BRIGHTNESS CONTROL)
KEC
©2020 ICPDF网 联系我们和版权申明