KTC3003HV [KEC]
TRIPLE DIFFUSED NPN TRANSISTOR HIGH VOLTAGE AND HIGH SPEED SWITCHING APPLICATION; TRIPLE DIFFUSED NPN晶体管高压和高速开关应用
| 型号： | KTC3003HV |
| 厂家： | 
KEC(KOREA ELECTRONICS) |
| 描述： | TRIPLE DIFFUSED NPN TRANSISTOR HIGH VOLTAGE AND HIGH SPEED SWITCHING APPLICATION |
| 文件： | 总2页 (文件大小：445K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
SEMICONDUCTOR
KTC3003HV
TRIPLE DIFFUSED NPN TRANSISTOR
TECHNICAL DATA
SWITCHING REGULATOR APPLICATION.
HIGH VOLTAGE AND HIGH SPEED
SWITCHING APPLICATION.
B
C
FEATURES
Excellent Switching Times
DIM MILLIMETERS
N
: ton=1.1 S(Typ.), tf=0.7 S(Typ.), at IC=1A
High Collector Voltage : VCBO=900V.
A
B
C
D
E
4.70 MAX
4.80 MAX
3.70 MAX
0.45
E
K
D
G
1.00
F
1.27
G
H
J
0.85
0.45
_
MAXIMUM RATING (Ta=25
CHARACTERISTIC
)
H
14.00 +0.50
K
L
0.55 MAX
2.30
F
F
SYMBOL
VCBO
VCEO
VEBO
IC
RATING
900
UNIT
V
M
0.45 MAX
1.00
N
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
3
1
2
530
V
1. EMITTER
2. COLLECTOR
3. BASE
9
V
DC
Collector Current
Pulse
1.5
A
ICP
3
TO-92
IB
Base Current
0.75
1.1
A
PC
Collector Power Dissipation
Junction Temperature
Storage Temperature Range
W
Tj
150
Tstg
-55 150
ELECTRICAL CHARACTERISTICS (Ta=25
)
CHARACTERISTIC
SYMBOL
IEBO
TEST CONDITION
MIN.
TYP.
MAX.
10
50
50
-
UNIT
VEB=9V, IC=0
Emitter Cut-off Current
-
15
20
6
-
-
-
A
hFE(1)
VCE=10V, IC=10mA
VCE=10V, IC=0.4A
VCE=10V, IC=1A
IC=0.5A, IB=0.1A
IC=1.5A, IB=0.5A
IC=0.5A, IB=0.1A
IC=1A, IB=0.25A
VCB=10V, f=0.1MHz, IE=0
VCE=10V, IC=0.1A
*hFE(2)
hFE(3)
DC Current Gain
-
-
-
0.8
2.5
1
Collector-Emitter
Saturation Voltage
VCE(sat)
V
-
-
-
-
Base-Emitter
VBE(sat)
V
Saturation Voltage
-
-
1.2
-
Cob
fT
Collector Output Capacitance
Transition Frequency
-
21
-
pF
4
-
MHz
OUTPUT
ton
tstg
tf
Turn-On Time
Storage Time
Fall Time
-
-
-
1.1
3.0
0.7
-
-
-
S
S
S
300
S
I
B1
INPUT
B2
I
B1
I
B2
I
I
=I =0.2A
B2
B1
V
=125V
CC
<
DUTY CYCLE 2%
=
*Note : hFE Classification R:20 30, O:13 21, Y: 35~40
2007. 9. 10
Revision No : 1
1/2
KTC3003HV
STATIC CHARACTERIC
DC CURRENT GAIN
100
10
1
2.0
1.8
1.2
0.8
0.4
0
VCE=10V
Ib=500mA
Ib=400mA
Ib=300mA
Ib=200mA
Ib=100mA
Ib=50mA
Ib=0mA
0
1
2
3
4
5
0.01
0.1
1
10
COLLECTOR CURRENT IO (A)
COLLECTOR EMITTER VOLTAGE VCE (V)
V
CE(sat)
vs. V
BE(sat)
SWITCHING TIME
100
10
1
100
10
1
IC=4Ib
t
stg
VBE(sat)
t
f
VCE(sat)
0.1
0.1
0.1
0.01
1
0.1
1
10
COLLECTOR CURRENT IC (A)
COLLECTOR CURRENT IC (A)
P
- Ta
SAFE OPERATING AREA
C
100
10
1
1.25
Tc=Ta INFINITE HEAT SINK
I
(Pulse)
(DC)
c max
1.1
1
10 s
I
c max
0.75
0.5
0.25
0
0.1
0.01
0.1
1
10
0
50
100
150
200
AMBIENT TEMPERATURE Ta ( C)
COLLECTOR EMITTER VOLTAGE VCE (V)
2007. 9. 10
Revision No : 1
2/2
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