MMBTA13 [KEC]
EPITAXIAL PLANAR NPN TRANSISTOR (GENERAL PURPOSE, DARLINGTON TRANSISTOR); 外延平面NPN晶体管（通用，达林顿晶体管）
| 型号： | MMBTA13 |
| 厂家： | 
KEC(KOREA ELECTRONICS) |
| 描述： | EPITAXIAL PLANAR NPN TRANSISTOR (GENERAL PURPOSE, DARLINGTON TRANSISTOR) |
| 文件： | 总2页 (文件大小：69K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
SEMICONDUCTOR
MMBTA13/14
EPITAXIAL PLANAR NPN TRANSISTOR
TECHNICAL DATA
GENERAL PURPOSE APPLICATION.
DARLINGTON TRANSISTOR.
E
L
B
L
DIM MILLIMETERS
_
+
2.93 0.20
A
B
C
D
E
G
H
J
1.30+0.20/-0.15
1.30 MAX
0.45+0.15/-0.05
2.40+0.30/-0.20
1.90
2
3
MAXIMUM RATING (Ta=25ᴱ)
CHARACTERISTIC
1
SYMBOL RATING
UNIT
V
0.95
0.13+0.10/-0.05
0.00 ~ 0.10
0.55
VCBO
VCES
VEBO
IC
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
30
30
K
L
P
P
V
M
N
P
0.20 MIN
1.00+0.20/-0.10
7
10
V
Collertor Current
500
mA
mW
ᴱ
M
PC *
Tj
Collector Power Dissipation
Junction Temperature
350
1. EMITTER
2. BASE
150
Tstg
3. COLLECTOR
Storage Temperature Range
-55ᴕ150
ᴱ
* : Package Mounted On 99.5% Alumina 10ᴧ8ᴧ0.6mm.
SOT-23
ELECTRICAL CHARACTERISTICS (Ta=25ᴱ)
CHARACTERISTIC
SYMBOL
VCES
TEST CONDITION
IC=0.1mA
MIN.
TYP.
MAX.
UNIT
Collector-Emitter Breakdown Voltage
Emitter Cut-off Current
Emitter Cut-off Current
MMBTA13
30
-
-
-
-
-
V
ICBO
VCB=30V
VEB=10V
100
100
nA
nA
IEBO
-
5,000
10,000
10,000
20,000
-
-
-
-
-
-
-
-
-
IC=10mA, VCE=5V
IC=100mA, VCE=5V
MMBTA14
hFE
*
DC Current Gain
-
MMBTA13
-
MMBTA14
Collector-Emitter Saturation Voltage
Base-Emitter Voltage
-
VCE(sat)
VBE
fT
IC=100mA, IB=0.1mA
1.5
2.0
V
V
IC=100mA, VCE=5V
-
IC=10mA, f=100MHz, VCE=5V
Current Gain Bandwith Product
125
-
-
MHz
*Pulse Test : Pulse Width⏊300ỌS, Duty Cycle⏊2.0%
MARK SPEC
Marking
Lot No.
TYPE
MMBTA13
AIX
MMBTA14
AHX
Type Name
MARK
A X
1999. 11. 30
Revision No : 4
1/2
MMBTA13/14
hFE - I
f T - IC
C
200K
100K
500
300
V
=5V
V
=5V
CE
CE
50K
30K
100
10K
50
30
5K
3K
1
3
10
30
100
300
1K
1
3
5
10
30 50
100
COLLECTOR CURRENT I (mA)
C
COLLECTOR CURRENT I (A)
C
VBE (sat), VCE (sat) - IC
I C - VBE
200
100
5
3
V =5V
CE
I
=1000I
B
C
50
30
V
V
(sat)
(sat)
BE
1
CE
10
5
3
0.5
0.3
0.2
1
5
10
30 50
100
300 500
0
0.4
0.8
1.2
1.6
2.0
2.4
(V)
2.8
COLLECTOR CURRENT I (mA)
C
BASE-EMITTER VOLTAGE V
BE
1999. 11. 30
Revision No : 4
2/2
相关型号：
MMBTA13-13
Small Signal Bipolar Transistor, 0.3A I(C), 30V V(BR)CEO, 1-Element, NPN, Silicon, PLASTIC PACKAGE-3
DIODES
MMBTA13D87Z
Small Signal Bipolar Transistor, 1.2A I(C), 30V V(BR)CEO, 1-Element, NPN, Silicon
FAIRCHILD
©2020 ICPDF网 联系我们和版权申明