AUIRFR2307Z [KERSEMI]
Advanced Process Technology; 先进的工艺技术
| 型号： | AUIRFR2307Z |
| 厂家： | 
Kersemi Electronic Co., Ltd. |
| 描述： | Advanced Process Technology |
| 文件： | 总11页 (文件大小：4111K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
AUIRFR2307Z
Features
●
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Advanced Process Technology
UltraLowOn-Resistance
175°COperatingTemperature
Fast Switching
Repetitive Avalanche Allowed up to Tjmax
Lead-Free,RoHSCompliant
Automotive Qualified *
D
V(BR)DSS
75V
16m
RDS(on) max.
ID (Silicon Limited)
ID (Package Limited)
Ω
G
53A
42A
S
Description
D
Specifically designed for Automotive applications,
this HEXFET® Power MOSFET utilizes the latest
processing techniques to achieve extremely low on-
resistance per silicon area. Additional features of this
design are a 175°C junction operating temperature,
fast switching speed and improved repetitive ava-
lanche rating . These features combine to make this
design an extremely efficient and reliable device for
use in Automotive applications and a wide variety of
other applications.
S
G
D-Pak
AUIRFR2307Z
G
Gate
D
Drain
S
Source
Absolute Maximum Ratings
Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These
are stress ratings only; and functional operation of the device at these or any other condition beyond those indicated in
the specifications is not implied. Exposure to absolute-maximum-rated conditions for extended periods may affect device
reliability. The thermal resistance and power dissipation ratings are measured under board mounted and still air conditions.
Ambient temperature (TA) is 25°C, unless otherwise specified.
Max.
53
Parameter
Continuous Drain Current, VGS @ 10V
Continuous Drain Current, VGS @ 10V
Continuous Drain Current, VGS @ 10V
Pulsed Drain Current
Units
(Silicon Limited)
I
I
I
I
@ T = 25°C
C
D
D
D
38
A
@ T = 100°C
C
(Package Limited)
42
@ T = 25°C
C
210
DM
110
P
@T = 25°C Power Dissipation
W
W/°C
V
D
C
0.70
Linear Derating Factor
Gate-to-Source Voltage
± 20
V
GS
EAS
100
140
Single Pulse Avalanche Energy (Thermally Limited)
Single Pulse Avalanche Energy Tested Value
Avalanche Current
mJ
EAS (tested )
IAR
See Fig.12a, 12b, 15, 16
A
EAR
Repetitive Avalanche Energy
mJ
-55 to + 175
300
T
T
Operating Junction and
J
Storage Temperature Range
°C
STG
Soldering Temperature, for 10 seconds (1.6mm from case )
Thermal Resistance
Parameter
Typ.
–––
–––
–––
Max.
1.42
50
Units
RθJC
RθJA
RθJA
Junction-to-Case
Junction-to-Ambient (PCB mount)
Junction-to-Ambient
°C/W
110
www.kersemi.com
1
07/23/2010
AUIRFR2307Z
Parameter
Drain-to-Source Breakdown Voltage
Min. Typ. Max. Units
75 ––– –––
Conditions
VGS = 0V, ID = 250µA
V(BR)DSS
∆V(BR)DSS/∆TJ
RDS(on)
V
Breakdown Voltage Temp. Coefficient ––– 0.072 ––– V/°C Reference to 25°C, ID = 1mA
mΩ
Static Drain-to-Source On-Resistance
Gate Threshold Voltage
––– 12.8
16
4.0
–––
25
VGS = 10V, ID = 32A
VGS(th)
2.0
30
–––
–––
–––
–––
–––
V
S
VDS = VGS, ID = 100µA
VDS = 25V, ID = 32A
gfs
IDSS
Forward Transconductance
Drain-to-Source Leakage Current
–––
–––
–––
–––
µA VDS = 75V, VGS = 0V
250
200
V
DS = 75V, VGS = 0V, TJ = 125°C
IGSS
Gate-to-Source Forward Leakage
Gate-to-Source Reverse Leakage
nA VGS = 20V
VGS = -20V
––– -200
Dynamic Electrical Characteristics @ TJ = 25°C (unless otherwise specified)
Parameter Min. Typ. Max. Units Conditions
Total Gate Charge
Qg
Qgs
Qgd
td(on)
tr
–––
–––
–––
–––
–––
–––
–––
–––
50
14
19
16
65
44
29
4.5
75
ID = 32A
nC VDS = 60V
VGS = 10V
Gate-to-Source Charge
Gate-to-Drain ("Miller") Charge
Turn-On Delay Time
Rise Time
–––
–––
–––
–––
–––
–––
–––
VDD = 38V
ID = 32A
td(off)
tf
Ω
Turn-Off Delay Time
Fall Time
ns
R
G = 10
VGS = 10V
Between lead,
LD
D
S
Internal Drain Inductance
nH 6mm (0.25in.)
from package
G
LS
Internal Source Inductance
–––
7.5
–––
and center of die contact
VGS = 0V
DS = 25V
pF ƒ = 1.0MHz
GS = 0V, VDS = 1.0V, ƒ = 1.0MHz
Ciss
Input Capacitance
––– 2190 –––
Coss
Output Capacitance
–––
–––
280
150
–––
–––
V
Crss
Reverse Transfer Capacitance
Output Capacitance
Coss
––– 1070 –––
V
Coss
Output Capacitance
–––
–––
190
400
–––
–––
VGS = 0V, VDS = 60V, ƒ = 1.0MHz
VGS = 0V, VDS = 0V to 60V
Coss eff.
Effective Output Capacitance
Diode Characteristics
Parameter
Min. Typ. Max. Units
Conditions
I
I
Continuous Source Current
–––
–––
42
MOSFET symbol
S
(Body Diode)
Pulsed Source Current
A
showing the
integral reverse
–––
–––
210
SM
(Body Diode)
p-n junction diode.
V
t
Diode Forward Voltage
–––
–––
–––
–––
31
1.3
47
47
V
T = 25°C, I = 32A, V = 0V
SD
J
S
GS
Reverse Recovery Time
Reverse Recovery Charge
Forward Turn-On Time
ns T = 25°C, I = 32A, VDD = 38V
J F
rr
di/dt = 100A/µs
Q
t
31
nC
rr
Intrinsic turn-on time is negligible (turn-on is dominated by LS+LD)
on
Notes:
ꢀ Limited by TJmax , see Fig.12a, 12b, 15, 16 for typical
repetitive avalanche performance.
Repetitive rating; pulse width limited by
max. junction temperature. (See fig. 11).
This value determined from sample failure population,
starting TJ = 25°C, L = 0.197mH, RG = 25Ω, IAS = 32A,
VGS =10V.
Limited by TJmax, starting TJ = 25°C, L = 0.197mH
RG = 25Ω, IAS = 32A, VGS =10V. Part not
recommended for use above this value.
When mounted on 1" square PCB (FR-4 or G-10 Material) .
For recommended footprint and soldering techniques
refer to application note #AN-994.
Pulse width ≤ 1.0ms; duty cycle ≤ 2%.
Coss eff. is a fixed capacitance that gives the same
charging time as Coss while VDS is rising from 0 to
Rθ is measured at TJ approximately 90°C.
80% VDSS
.
2
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AUIRFR2307Z
Automotive
††
(per AEC-Q101)
Qualification Level
Comments: This part number(s) passed Automotive qualification.
IR’s Industrial and Consumer qualification level is granted by
extension of the higher Automotive level.
Moisture Sensitivity Level
D-PAK
MSL1
Class M4 (425V)
Machine Model
AEC-Q101-002
Class H1B (1000V)
AEC-Q101-001
Class (C5 (1125V)
AEC-Q101-005
Yes
Human Body Model
ESD
Charged Device
Model
RoHS Compliant
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3
AUIRFR2307Z
1000
100
10
1000
VGS
15V
VGS
15V
10V
8.0V
7.0V
6.0V
5.5V
5.0V
4.5V
TOP
TOP
10V
8.0V
7.0V
6.0V
5.5V
5.0V
4.5V
100
10
1
BOTTOM
BOTTOM
4.5V
4.5V
60µs PULSE WIDTH
≤
60µs PULSE WIDTH
≤
Tj = 175°C
Tj = 25°C
1
0.1
0.1
1
10
100
0.1
1
10
100
V
, Drain-to-Source Voltage (V)
V
, Drain-to-Source Voltage (V)
DS
DS
Fig 1. Typical Output Characteristics
Fig 2. Typical Output Characteristics
1000
80
T
= 25°C
J
100
10
1
60
40
20
0
T
= 175°C
J
T
= 175°C
J
T
= 25°C
V
J
V
= 10V
= 20V
DS
380µs PULSE WIDTH
DS
60µs PULSE WIDTH
≤
0.1
2
4
6
8
10
0
10
20
30
40
50
60
70
I ,Drain-to-Source Current (A)
V
, Gate-to-Source Voltage (V)
D
GS
Fig 3. Typical Transfer Characteristics
Fig 4. Typical Forward Transconductance
vs. Drain Current
4
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AUIRFR2307Z
4000
3000
2000
1000
0
20
16
12
8
V
C
= 0V,
f = 1 MHZ
GS
I = 32A
D
= C + C , C SHORTED
iss
gs
gd ds
V
= 60V
DS
C
= C
rss
gd
VDS= 38V
VDS= 15V
C
= C + C
ds
oss
gd
C
iss
4
C
oss
rss
C
0
0
20
40
60
80
1
10
100
Q
Total Gate Charge (nC)
G
V
, Drain-to-Source Voltage (V)
DS
Fig 6. Typical Gate Charge vs.
Fig 5. Typical Capacitance vs.
Gate-to-SourceVoltage
Drain-to-SourceVoltage
1000.00
100.00
10.00
1.00
1000
100
10
OPERATION IN THIS AREA
LIMITED BY R
(on)
DS
100µsec
T
= 175°C
J
1msec
10msec
1
Tc = 25°C
Tj = 175°C
Single Pulse
T
= 25°C
1.0
J
V
= 0V
DC
10
GS
0.1
0.10
1
100
0.2
0.4
V
0.6
0.8
1.2
1.4
1.6
V
, Drain-toSource Voltage (V)
DS
, Source-to-Drain Voltage (V)
SD
Fig 8. Maximum Safe Operating Area
Fig 7. Typical Source-Drain Diode
Forward Voltage
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5
AUIRFR2307Z
60
2.5
2.0
1.5
1.0
0.5
I
= 32A
LIMITED BY PACKAGE
D
V
= 10V
GS
50
40
30
20
10
0
25
50
75
100
125
150
175
-60 -40 -20
0
20 40 60 80 100 120 140 160 180
T
, Case Temperature (°C)
C
T
, Junction Temperature (°C)
J
Fig 10. Normalized On-Resistance
Fig 9. Maximum Drain Current vs.
vs.Temperature
CaseTemperature
10
1
0.1
D = 0.50
0.20
0.10
R1
R1
R2
R2
Ri (°C/W) τi (sec)
τ
0.05
J τJ
τ
0.7938
0.000499
τ
Cτ
1 τ1
Ci= τi/Ri
τ
0.02
0.01
2τ2
0.6257
0.005682
0.01
Notes:
1. Duty Factor D = t1/t2
2. Peak Tj = P dm x Zthjc + Tc
SINGLE PULSE
( THERMAL RESPONSE )
0.001
1E-006
1E-005
0.0001
0.001
0.01
0.1
t
, Rectangular Pulse Duration (sec)
1
Fig 11. Maximum Effective Transient Thermal Impedance, Junction-to-Case
6
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AUIRFR2307Z
15V
500
400
300
200
100
0
I
D
TOP
3.4A
4.6A
32A
DRIVER
+
L
V
DS
BOTTOM
D.U.T
AS
R
G
V
DD
-
I
A
V
20V
GS
Ω
0.01
t
p
Fig 12a. Unclamped Inductive Test Circuit
V
(BR)DSS
t
p
25
50
75
100
125
150
175
Starting T , Junction Temperature (°C)
J
I
AS
Fig 12c. Maximum Avalanche Energy
Fig 12b. Unclamped Inductive Waveforms
vs. Drain Current
Q
G
10 V
Q
Q
5.0
4.5
4.0
3.5
3.0
2.5
2.0
1.5
1.0
GS
GD
I
= 1.0A
D
ID = 1.0mA
I
= 250µA
V
D
D
G
I
= 100µA
Charge
Fig 13a. Basic Gate Charge Waveform
L
VCC
-75 -50 -25
0
J
25 50 75 100 125 150 175
, Temperature ( °C )
DUT
0
T
1K
Fig 14. Threshold Voltage vs. Temperature
Fig 13b. Gate Charge Test Circuit
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7
AUIRFR2307Z
1000
Duty Cycle = Single Pulse
100
Allowed avalanche Current vs
avalanche pulsewidth, tav
assuming ∆Tj = 25°C due to
avalanche losses
0.01
10
0.05
0.10
1
0.1
1.0E-06
1.0E-05
1.0E-04
1.0E-03
1.0E-02
1.0E-01
tav (sec)
Fig 15. Typical Avalanche Current vs.Pulsewidth
120
Notes on Repetitive Avalanche Curves , Figures 15, 16:
(For further info, see AN-1005 at www.irf.com)
1. Avalanche failures assumption:
Purely a thermal phenomenon and failure occurs at a
temperature far in excess of Tjmax. This is validated for
every part type.
2. Safe operation in Avalanche is allowed as long asTjmax is
not exceeded.
3. Equation below based on circuit and waveforms shown in
Figures 12a, 12b.
4. PD (ave) = Average power dissipation per single
avalanche pulse.
5. BV = Rated breakdown voltage (1.3 factor accounts for
voltage increase during avalanche).
6. Iav = Allowable avalanche current.
TOP
BOTTOM 1% Duty Cycle
= 32A
Single Pulse
100
80
60
40
20
0
I
D
7. ∆T = Allowable rise in junction temperature, not to exceed
Tjmax (assumed as 25°C in Figure 15, 16).
tav = Average time in avalanche.
25
50
75
100
125
150
175
D = Duty cycle in avalanche = tav ·f
Starting T , Junction Temperature (°C)
ZthJC(D, tav) = Transient thermal resistance, see figure 11)
J
PD (ave) = 1/2 ( 1.3·BV·Iav) = DT/ ZthJC
Iav = 2DT/ [1.3·BV·Zth]
EAS (AR) = PD (ave)·tav
Fig 16. Maximum Avalanche Energy
vs.Temperature
8
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AUIRFR2307Z
Driver Gate Drive
P.W.
P.W.
Period
Period
D =
D.U.T
+
*
=10V
V
GS
CircuitLayoutConsiderations
• Low Stray Inductance
• Ground Plane
• Low Leakage Inductance
Current Transformer
-
D.U.T. I Waveform
SD
+
-
Reverse
Recovery
Current
Body Diode Forward
Current
di/dt
-
+
D.U.T. V Waveform
DS
Diode Recovery
dv/dt
V
DD
VDD
Re-Applied
Voltage
• dv/dtcontrolledbyRG
RG
+
-
Body Diode
Forward Drop
• Driver same type as D.U.T.
• ISD controlled by Duty Factor "D"
• D.U.T. - Device Under Test
Inductor Curent
I
SD
Ripple ≤ 5%
* VGS = 5V for Logic Level Devices
Fig 17. Peak Diode Recovery dv/dt Test Circuit for N-Channel
HEXFET® Power MOSFETs
RD
VDS
VGS
D.U.T.
RG
+VDD
-
10V
PulseWidth ≤ 1 µs
Duty Factor≤ 0.1 %
Fig 18a. Switching Time Test Circuit
V
DS
90%
10%
V
GS
t
t
r
t
t
f
d(on)
d(off)
Fig 18b. Switching Time Waveforms
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9
AUIRFR2307Z
D-Pak (TO-252AA) Package Outline
Dimensions are shown in millimeters (inches)
D-Pak Part Marking Information
PartNumber
AUFR2307Z
DateCode
Y= Year
WW= Work Week
A=Automotive,LeadFree
IRLogo
YWWA
XX or XX
LotCode
10
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AUIRFR2307Z
D-Pak (TO-252AA) Tape & Reel Information
Dimensions are shown in millimeters (inches)
TR
TRL
TRR
16.3 ( .641 )
15.7 ( .619 )
16.3 ( .641 )
15.7 ( .619 )
12.1 ( .476 )
11.9 ( .469 )
8.1 ( .318 )
7.9 ( .312 )
FEED DIRECTION
FEED DIRECTION
NOTES :
1. CONTROLLING DIMENSION : MILLIMETER.
2. ALL DIMENSIONS ARE SHOWN IN MILLIMETERS ( INCHES ).
3. OUTLINE CONFORMS TO EIA-481 & EIA-541.
13 INCH
16 mm
NOTES :
1. OUTLINE CONFORMS TO EIA-481.
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11
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