IRFS634B [KERSEMI]
250V N-Channel MOSFET; 250V N沟道MOSFET型号: | IRFS634B |
厂家: | Kersemi Electronic Co., Ltd. |
描述: | 250V N-Channel MOSFET |
文件: | 总9页 (文件大小:896K) |
下载: | 下载PDF数据表文档文件 |
IRFS635
TRANSISTOR | MOSFET | N-CHANNEL | 250V V(BR)DSS | 4.4A I(D) | TO-220VARWarning: Undefined variable $rtag in /www/wwwroot/www.icpdf.com/pdf/pdf/index.php on line 154
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35
ETC
IRFS635
Power Field-Effect Transistor, 4.4A I(D), 250V, 0.68ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB, TO-220F, 3 PINWarning: Undefined variable $rtag in /www/wwwroot/www.icpdf.com/pdf/pdf/index.php on line 154
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0
SAMSUNG
IRFS640
200V N-Channel MOSFETWarning: Undefined variable $rtag in /www/wwwroot/www.icpdf.com/pdf/pdf/index.php on line 154
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394
FAIRCHILD
IRFS640
200V N-Channel MOSFETWarning: Undefined variable $rtag in /www/wwwroot/www.icpdf.com/pdf/pdf/index.php on line 154
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117
FAIRCHILD
IRFS640
Improved inductive ruggednessWarning: Undefined variable $rtag in /www/wwwroot/www.icpdf.com/pdf/pdf/index.php on line 154
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55
SAMSUNG
IRFS640
Power Field-Effect Transistor, 9.8A I(D), 200V, 0.18ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB, TO-220, 3 PINWarning: Undefined variable $rtag in /www/wwwroot/www.icpdf.com/pdf/pdf/index.php on line 154
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1
SAMSUNG
IRFS640A
Rugged Gate Oxide TechnologyWarning: Undefined variable $rtag in /www/wwwroot/www.icpdf.com/pdf/pdf/index.php on line 154
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46
FAIRCHILD
IRFS640A
Improved gate chargeWarning: Undefined variable $rtag in /www/wwwroot/www.icpdf.com/pdf/pdf/index.php on line 154
-
84
SAMSUNG
IRFS640A
TRANSISTOR | MOSFET | N-CHANNEL | 200V V(BR)DSS | 9.8A I(D) | TO-220ABWarning: Undefined variable $rtag in /www/wwwroot/www.icpdf.com/pdf/pdf/index.php on line 154
-
452
ETC
IRFS640B
200V N-Channel MOSFETWarning: Undefined variable $rtag in /www/wwwroot/www.icpdf.com/pdf/pdf/index.php on line 154
-
241
FAIRCHILD
IRFS640B
200V N-Channel MOSFETWarning: Undefined variable $rtag in /www/wwwroot/www.icpdf.com/pdf/pdf/index.php on line 154
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16
TGS
IRFS640B
18A, 200V, 0.18ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220F, 3 PINWarning: Undefined variable $rtag in /www/wwwroot/www.icpdf.com/pdf/pdf/index.php on line 154
-
0
ROCHESTER
IRFS640B_FP001
Power Field-Effect Transistor, 18A I(D), 200V, 0.18ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, LEAD FREE, TO-220F, 3 PINWarning: Undefined variable $rtag in /www/wwwroot/www.icpdf.com/pdf/pdf/index.php on line 154
-
0
FAIRCHILD
IRFS640B_FP001
18A, 200V, 0.18ohm, N-CHANNEL, Si, POWER, MOSFET, LEAD FREE, TO-220F, 3 PINWarning: Undefined variable $rtag in /www/wwwroot/www.icpdf.com/pdf/pdf/index.php on line 154
-
0
ROCHESTER
IRFS641
Improved inductive ruggednessWarning: Undefined variable $rtag in /www/wwwroot/www.icpdf.com/pdf/pdf/index.php on line 154
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21
SAMSUNG
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