SIHF9Z34 [KERSEMI]
Power MOSFET Dynamic dV/dt Rating Repetitive Avalanche Rated P-Channel; 功率MOSFET动态的dv / dt额定值额定重复性雪崩P沟道
| 型号： | SIHF9Z34 |
| 厂家： | 
Kersemi Electronic Co., Ltd. |
| 描述： | Power MOSFET Dynamic dV/dt Rating Repetitive Avalanche Rated P-Channel |
| 文件： | 总7页 (文件大小：7497K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
IRF9Z34, SiHF9Z34
Power MOSFET
FEATURES
• Dynamic dV/dt Rating
PRODUCT SUMMARY
VDS (V)
- 60
Available
• Repetitive Avalanche Rated
• P-Channel
RDS(on) (Ω)
VGS = - 10 V
0.14
RoHS*
Qg (Max.) (nC)
34
9.9
COMPLIANT
• 175 °C Operating Temperature
• Fast Switching
Q
Q
gs (nC)
gd (nC)
16
• Ease of Paralleling
Configuration
Single
• Simple Drive Requirements
• Lead (Pb)-free Available
S
TO-220
DESCRIPTION
G
Third generation Power MOSFETs from Vishay provide the
designer with the best combination of fast switching,
ruggedized device design, low on-resistance and
cost-effectiveness.
The TO-220 package is universally preferred for all
commercial-industrial applications at power dissipation
levels to approximately 50 W. The low thermal resistance
and low package cost of the TO-220 contribute to its wide
acceptance throughout the industry.
D
P-Channel MOSFET
ORDERING INFORMATION
Package
TO-220
IRF9Z34PbF
SiHF9Z34-E3
IRF9Z34
Lead (Pb)-free
SnPb
SiHF9Z34
ABSOLUTE MAXIMUM RATINGS TC = 25 °C, unless otherwise noted
PARAMETER
SYMBOL
LIMIT
- 60
UNIT
Drain-Source Voltage
Gate-Source Voltage
VDS
V
VGS
20
T
C = 25 °C
- 18
Continuous Drain Current
VGS at - 10 V
ID
TC = 100 °C
- 13
A
Pulsed Drain Currenta
IDM
- 72
Linear Derating Factor
0.59
370
W/°C
mJ
A
Single Pulse Avalanche Energyb
Repetitive Avalanche Currenta
Repetitive Avalanche Energya
Maximum Power Dissipation
Peak Diode Recovery dV/dtc
EAS
IAR
- 18
EAR
8.8
mJ
W
TC = 25 °C
PD
88
dV/dt
TJ, Tstg
- 4.5
- 55 to + 175
300d
10
V/ns
Operating Junction and Storage Temperature Range
Soldering Recommendations (Peak Temperature)
°C
for 10 s
lbf · in
N · m
Mounting Torque
6-32 or M3 screw
1.1
Notes
a. Repetitive rating; pulse width limited by maximum junction temperature (see fig. 11).
b. VDD = - 25 V, starting TJ = 25 °C, L = 1.3 mH, RG = 25 Ω, IAS = -18 A (see fig. 12).
c. ISD ≤ - 18 A, dI/dt ≤ 170 A/µs, VDD ≤ VDS, TJ ≤ 175 °C.
d. 1.6 mm from case.
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1
IRF9Z34, SiHF9Z34
THERMAL RESISTANCE RATINGS
PARAMETER
SYMBOL
TYP.
MAX.
62
UNIT
Maximum Junction-to-Ambient
Case-to-Sink, Flat, Greased Surface
Maximum Junction-to-Case (Drain)
RthJA
RthCS
RthJC
-
0.50
-
-
°C/W
1.7
SPECIFICATIONS TJ = 25 °C, unless otherwise noted
PARAMETER
SYMBOL
TEST CONDITIONS
MIN.
TYP.
MAX.
UNIT
Static
Drain-Source Breakdown Voltage
VDS Temperature Coefficient
Gate-Source Threshold Voltage
Gate-Source Leakage
VDS
ΔVDS/TJ
VGS(th)
IGSS
VGS = 0 V, ID = - 250 µA
Reference to 25 °C, ID = - 1 mA
VDS = VGS, ID = 250 µA
- 60
-
-
-
V
V/°C
V
-
- 0.060
- 2.0
-
-
-
-
-
-
- 4.0
VGS
VDS = - 60 V, VGS = 0 V
VDS = - 48 V, VGS = 0 V, TJ = 150 °C
VGS = - 10 V
ID = - 11 Ab
=
20 V
-
100
- 100
- 500
0.14
-
nA
-
-
Zero Gate Voltage Drain Current
IDSS
µA
Drain-Source On-State Resistance
Forward Transconductance
Dynamic
RDS(on)
gfs
-
Ω
VDS = - 25 V, ID = - 11 Ab
5.9
S
Input Capacitance
Ciss
Coss
Crss
-
-
-
1100
620
-
-
-
VGS = 0 V,
VDS = - 25 V,
f = 1.0 MHz, see fig. 5
Output Capacitance
pF
Reverse Transfer Capacitance
100
Total Gate Charge
Qg
-
-
-
-
34
ID = - 1 8 A,
Gate-Source Charge
Qgs
VGS = - 10 V
VDS = - 48 V,
9.9
nC
see fig. 6 and 13b
Gate-Drain Charge
Turn-On Delay Time
Rise Time
Qgd
td(on)
tr
-
-
-
-
-
-
16
-
18
120
20
58
-
VDD = - 30 V, ID = - 18 A,
ns
Turn-Off Delay Time
Fall Time
td(off)
tf
RG = 12 Ω, RD = 1.5 Ω, see fig. 10b
-
-
D
Between lead,
Internal Drain Inductance
Internal Source Inductance
LD
LS
-
-
4.5
7.5
-
-
6 mm (0.25") from
package and center of
die contact
nH
G
S
Drain-Source Body Diode Characteristics
MOSFET symbol
showing the
integral reverse
p - n junction diode
D
Continuous Source-Drain Diode Current
IS
-
-
-
-
- 18
- 72
A
G
Pulsed Diode Forward Currenta
ISM
S
Body Diode Voltage
VSD
trr
TJ = 25 °C, IS = - 18 A, VGS = 0 Vb
-
-
-
-
- 6.3
200
V
Body Diode Reverse Recovery Time
Body Diode Reverse Recovery Charge
Forward Turn-On Time
100
0.28
ns
µC
TJ = 25 °C, IF = - 18 A, dI/dt = 100 A/µsb
Qrr
ton
0.52
Intrinsic turn-on time is negligible (turn-on is dominated by LS and LD)
Notes
a. Repetitive rating; pulse width limited by maximum junction temperature (see fig. 11).
b. Pulse width ≤ 300 µs; duty cycle ≤ 2 %.
2
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IRF9Z34, SiHF9Z34
TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted
Fig. 1 - Typical Output Characteristics, TC = 25 °C
Fig. 3 - Typical Transfer Characteristics
Fig. 2 - Typical Output Characteristics, TC = 175 °C
Fig. 4 - Normalized On-Resistance vs. Temperature
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3
IRF9Z34, SiHF9Z34
Fig. 5 - Typical Capacitance vs. Drain-to-Source Voltage
Fig. 7 - Typical Source-Drain Diode Forward Voltage
Fig. 6 - Typical Gate Charge vs. Gate-to-Source Voltage
Fig. 8 - Maximum Safe Operating Area
4
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IRF9Z34, SiHF9Z34
RD
VDS
VGS
D.U.T.
RG
-
+
VDD
- 10 V
Pulse width ≤ 1 µs
Duty factor ≤ 0.1 %
Fig. 10a - Switching Time Test Circuit
td(on) tr
td(off) tf
VGS
10 %
90 %
VDS
Fig. 9 - Maximum Drain Current vs. Case Temperature
Fig. 10b - Switching Time Waveforms
Fig. 11 - Maximum Effective Transient Thermal Impedance, Junction-to-Case
L
IAS
VDS
Vary tp to obtain
required IAS
VDS
D.U.T
RG
-
V
+
DD
VDD
IAS
tp
- 10 V
0.01 Ω
tp
VDS
Fig. 12b - Unclamped Inductive Waveforms
Fig. 12a - Unclamped Inductive Test Circuit
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5
IRF9Z34, SiHF9Z34
Fig. 12c - Maximum Avalanche Energy vs. Drain Current
Current regulator
Same type as D.U.T.
50 kΩ
QG
- 10 V
12 V
0.2 µF
0.3 µF
-
QGS
QGD
V
+
DS
D.U.T.
VG
VGS
- 3 mA
Charge
IG
ID
Current sampling resistors
Fig. 13b - Gate Charge Test Circuit
Fig. 13a - Basic Gate Charge Waveform
6
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IRF9Z34, SiHF9Z34
Peak Diode Recovery dV/dt Test Circuit
D.U.T.
+
Circuit layout considerations
• Low stray inductance
• Ground plane
• Low leakage inductance
current transformer
-
+
-
+
-
RG
+
-
• dV/dt controlled by RG
• ISD controlled by duty factor "D"
• D.U.T. - device under test
VDD
Compliment N-Channel of D.U.T. for driver
Driver gate drive
P.W.
Period
Period
D =
P.W.
V
= - 10 V*
GS
D.U.T. I waveform
SD
Reverse
recovery
current
Body diode forward
current
dI/dt
D.U.T. V waveform
DS
Diode recovery
dV/dt
V
DD
Re-applied
voltage
Body diode forward drop
Ripple ≤ 5 %
Inductor current
I
SD
* VGS = - 5 V for logic level and - 3 V drive devices
Fig. 14 - For P-Channel
7
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相关型号：
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SIHF9Z34STRL-GE3
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