SIHF9Z34S-GE3 [VISHAY]
TRANSISTOR 18 A, 60 V, 0.14 ohm, P-CHANNEL, Si, POWER, MOSFET, TO-263AB, HALOGEN FREE AND ROHS COMPLIANT, TO-263, D2PAK-3, FET General Purpose Power;
| 型号： | SIHF9Z34S-GE3 |
| 厂家： | 
VISHAY |
| 描述： | TRANSISTOR 18 A, 60 V, 0.14 ohm, P-CHANNEL, Si, POWER, MOSFET, TO-263AB, HALOGEN FREE AND ROHS COMPLIANT, TO-263, D2PAK-3, FET General Purpose Power 局域网 开关 脉冲 晶体管 |
| 文件： | 总10页 (文件大小：193K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
IRF9Z34S, SiHF9Z34S, IRF9Z34L, SiHF9Z34L
Vishay Siliconix
Power MOSFET
FEATURES
PRODUCT SUMMARY
VDS (V)
• Halogen-free According to IEC 61249-2-21
Definition
- 60
• Advanced Process Technology
• Surface Mount (IRF9Z34S, SiHF9Z34S)
RDS(on) ()
VGS = - 10 V
0.14
Qg (Max.) (nC)
34
9.9
16
•
Low-Profile Through-Hole (IRF9Z34L, SiHF9Z34L)
• 175 °C Operating Temperature
• Fast Switching
• P-Channel
Q
Q
gs (nC)
gd (nC)
• Fully Avalanche Rated
• Compliant to RoHS Directive 2002/95/EC
DESCRIPTION
Configuration
I2PAK (TO-262)
G
Single
Third generation Power MOSFETs from Vishay utilize
advanced processing techniques to achieve extremely low
on-resistance per silicon area. This benefit, combined with
the fast switching speed and ruggedized device design that
Power MOSFETs are well known for, provides the designer
with an extremely efficient and reliable device for use in a
wide variety of applications.
S
D2PAK (TO-263)
G
The D2PAK is a surface mount power package capable of
accommodating die sizes up to HEX-4. It provides the
highest power capability and the lowest possible
on-resistance in any existing surface mount package. The
D2PAK is suitable for high current applications because of
its low internal connection resistance and can dissipate up
to 2.0 W in a typical surface mount application.
G
D
S
D
S
D
P-Channel MOSFET
The through-hole version (IRF9Z34L, SiHF9Z34L) is
available for low-profile applications.
ORDERING INFORMATION
Package
Lead (Pb)-free and Halogen-free
D2PAK (TO-263)
SiHF9Z34S-GE3
IRF9Z34SPbF
D2PAK (TO-263)
D2PAK (TO-263)
I2PAK (TO-262)
-
IRF9Z34LPbF
SiHF9Z34L-E3
SiHF9Z34STRL-GE3a
IRF9Z34STRLPbFa
SiHF9Z34STL-E3a
SiHF9Z34STRR-GE3a
IRF9Z34STRRPbFa
SiHF9Z34STR-E3a
Lead (Pb)-free
SiHF9Z34S-E3
Note
a. See device orientation.
ABSOLUTE MAXIMUM RATINGS (TC = 25 °C, unless otherwise noted)
PARAMETER
SYMBOL
LIMIT
UNIT
Drain-Source Voltage
Gate-Source Voltage
VDS
VGS
- 60
20
V
TC = 25 °C
TC = 100 °C
- 18
- 13
Continuous Drain Current
VGS at - 10 V
ID
A
Pulsed Drain Currenta, e
Linear Derating Factor
Single Pulse Avalanche Energyb, e
Avalanche Currenta
Repetiitive Avalanche Energya
IDM
- 72
0.59
370
- 18
8.8
W/°C
mJ
A
EAS
IAR
EAR
mJ
TC = 25 °C
TA = 25 °C
88
3.7
Maximum Power Dissipation
PD
W
V/ns
°C
Peak Diode Recovery dV/dtc, e
Operating Junction and Storage Temperature Range
Soldering Recommendations (Peak Temperature)
dV/dt
TJ, Tstg
- 4.5
- 55 to + 175
300d
for 10 s
Notes
a. Repetitive rating; pulse width limited by maximum junction temperature (see fig. 11).
b. VDD = - 25 V, starting TJ = 25 °C, L = 1.3 mH, Rg = 25 , IAS = - 18 A (see fig. 12).
c. ISD - 18 A, dI/dt 170 A/μs, VDD VDS, TJ 175 °C.
d. 1.6 mm from case.
e. Uses IRF9Z34, SiHF9Z34 data and test conditions.
* Pb containing terminations are not RoHS compliant, exemptions may apply
Document Number: 91093
S11-1052-Rev. C, 30-May-11
www.vishay.com
1
This document is subject to change without notice.
THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
IRF9Z34S, SiHF9Z34S, IRF9Z34L, SiHF9Z34L
Vishay Siliconix
THERMAL RESISTANCE RATINGS
PARAMETER
SYMBOL
TYP.
MAX.
40
UNIT
Maximum Junction-to-Ambient (PCB
Mounted, steady-state)a
RthJA
-
-
°C/W
Maximum Junction-to-Case (Drain)
RthJC
1.7
Note
a. When mounted on 1" square PCB (FR-4 or G-10 material).
SPECIFICATIONS (TJ = 25 °C, unless otherwise noted)
PARAMETER
SYMBOL
TEST CONDITIONS
MIN.
TYP.
MAX. UNIT
Static
Drain-Source Breakdown Voltage
VDS
VDS/TJ
VGS(th)
IGSS
VGS = 0 V, ID = - 250 μA
- 60
-
-
V
V/°C
V
VDS Temperature Coefficient
Reference to 25 °C, ID = - 1 mAc
VDS = VGS, ID = - 250 μA
-
- 0.06
-
Gate-Source Threshold Voltage
Gate-Source Leakage
- 2.0
-
-
-
-
-
-
- 4.0
100
- 100
- 500
0.14
-
VGS
=
20 V
-
-
nA
VDS = - 60 V, VGS = 0 V
Zero Gate Voltage Drain Current
IDSS
μA
V
DS = - 48 V, VGS = 0 V, TJ = 150 °C
-
Drain-Source On-State Resistance
Forward Transconductance
Dynamic
RDS(on)
gfs
VGS = - 10 V
VDS = - 25 V, ID = - 11 Ac
ID = - 11 Ab
-
5.9
S
Input Capacitance
Ciss
Coss
Crss
Qg
-
-
-
-
-
-
-
-
-
-
1100
620
100
-
-
-
VGS = 0 V,
DS = - 25 V,
f = 1.0 MHz, see fig. 5c
Output Capacitance
Reverse Transfer Capacitance
Total Gate Charge
V
pF
nC
-
34
9.9
16
-
ID = - 18 A, VDS = - 48 V,
see fig. 6 and 13b, c
Gate-Source Charge
Gate-Drain Charge
Qgs
Qgd
td(on)
tr
VGS = - 10 V
-
-
Turn-On Delay Time
Rise Time
18
120
20
58
-
V
DD = - 30 V, ID = - 18 A,
ns
Turn-Off Delay Time
Fall Time
td(off)
tf
Rg = 12 , RD = 1.5 , see fig. 10b, c
-
-
Drain-Source Body Diode Characteristics
MOSFET symbol
showing the
integral reverse
p - n junction diode
D
Continuous Source-Drain Diode Current
Pulsed Diode Forward Currenta
IS
-
-
-
-
- 18
- 72
A
G
ISM
S
Body Diode Voltage
VSD
trr
TJ = 25 °C, IS = - 18 A, VGS = 0 Vb
-
-
-
-
- 6.3
200
520
V
Body Diode Reverse Recovery Time
Body Diode Reverse Recovery Charge
Forward Turn-On Time
100
280
ns
nC
TJ = 25 °C, IF = - 18 A, dI/dt = 100 A/μsb, c
Qrr
ton
Intrinsic turn-on time is negligible (turn-on is dominated by LS and LD)
Notes
a. Repetitive rating; pulse width limited by maximum junction temperature (see fig. 11).
b. Pulse width 300 μs; duty cycle 2 %.
c. Uses IRF9Z34,SiHF9Z34 data and test conditions.
www.vishay.com
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Document Number: 91093
S11-1052-Rev. C, 30-May-11
This document is subject to change without notice.
THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
IRF9Z34S, SiHF9Z34S, IRF9Z34L, SiHF9Z34L
Vishay Siliconix
TYPICAL CHARACTERISTICS (25 °C, unless otherwise noted)
102
101
100
VGS
Top
- 15 V
- 10 V
- 8.0 V
- 7.0 V
- 6.0 V
- 5.5 V
- 5.0 V
25 °C
175 °C
101
Bottom - 4.5 V
- 4.5 V
20 µs Pulse Width
TC = 25 °C
20 µs Pulse Width
VDS = - 25 V
100
10-1
100
101
4
5
6
7
8
9
10
- VDS, Drain-to-Source Voltage (V)
91093_01
91093_03
- VGS, Gate-to-Source Voltage (V)
Fig. 1 - Typical Output Characteristics
Fig. 3 - Typical Transfer Characteristics
102
101
100
2.5
VGS
- 15 V
ID = - 18 A
VGS = - 10 V
Top
- 10 V
- 8.0 V
- 7.0 V
- 6.0 V
- 5.5 V
- 5.0 V
2.0
1.5
1.0
0.5
0.0
Bottom - 4.5 V
- 4.5 V
20 µs Pulse Width
TC = 175 °C
100
101
60 80 100
20 40 120140 160
10-1
180
- 60 - 40- 20
0
TJ, Junction Temperature (°C)
- VDS, Drain-to-Source Voltage (V)
91093_04
91093_02
Fig. 2 - Typical Output Characteristics
Fig. 4 - Normalized On-Resistance vs. Temperature
Document Number: 91093
S11-1052-Rev. C, 30-May-11
www.vishay.com
3
This document is subject to change without notice.
THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
IRF9Z34S, SiHF9Z34S, IRF9Z34L, SiHF9Z34L
Vishay Siliconix
2000
VGS = 0 V, f = 1 MHz
Ciss = Cgs + Cgd, Cds Shorted
Crss = Cgd
Coss = Cds + Cgd
1600
101
Ciss
1200
800
400
0
175 °C
25 °C
Coss
100
Crss
VGS = 0 V
4.0 5.0
100
101
0.0
1.0
2.0
3.0
- VSD, Source-to-Drain Voltage (V)
- VDS
,
Drain-to-Source Voltage (V)
91093_07
91093_05
Fig. 5 - Typical Capacitance vs. Drain-to-Source Voltage
Fig. 7 - Typical Source-Drain Diode Forward Voltage
103
20
ID = - 18 A
Operation in this area limited
5
by RDS(on)
V
DS = - 48 V
16
12
8
2
VDS = - 30 V
102
10 µs
5
100 µs
2
1 ms
10
5
4
10 ms
TC = 25 °C
TJ = 175 °C
Single Pulse
2
For test circuit
see figure 13
1
0.1
0
2
5
2
5
2
5
2
5
35
102
103
0
10
25
30
1
10
5
15
20
- VDS, Drain-to-Source Voltage (V)
91093_08
QG, Total Gate Charge (nC)
91093_06
Fig. 6 - Typical Gate Charge vs. Gate-to-Source Voltage
Fig. 8 - Maximum Safe Operating Area
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4
Document Number: 91093
S11-1052-Rev. C, 30-May-11
This document is subject to change without notice.
THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
IRF9Z34S, SiHF9Z34S, IRF9Z34L, SiHF9Z34L
Vishay Siliconix
RD
VDS
20
16
VGS
D.U.T.
Rg
-
+
VDD
12
8
- 10 V
Pulse width ≤ 1 µs
Duty factor ≤ 0.1 %
Fig. 10a - Switching Time Test Circuit
4
0
td(on) tr
td(off) tf
VGS
25
50
75
100
125
150
175
10 %
TC, Case Temperature (°C)
91093_09
90 %
VDS
Fig. 9 - Maximum Drain Current vs. Case Temperature
Fig. 10b - Switching Time Waveforms
10
1
D = 0.5
0.2
0.1
PDM
0.05
0.1
t1
Single Pulse
(Thermal Response)
0.02
0.01
t2
Notes:
1. Duty Factor, D = t1/t2
2. Peak Tj = PDM x ZthJC + TC
10-2
10-5
10-4
10-3
10-2
0.1
1
10
t1, Rectangular Pulse Duration (s)
91093_11
Fig. 11 - Maximum Effective Transient Thermal Impedance, Junction-to-Case
L
IAS
VDS
Vary tp to obtain
required IAS
VDS
D.U.T.
-
Rg
V
+
DD
VDD
IAS
tp
- 10 V
0.01 Ω
tp
VDS
Fig. 12a - Unclamped Inductive Test Circuit
Fig. 12b - Unclamped Inductive Waveforms
Document Number: 91093
S11-1052-Rev. C, 30-May-11
www.vishay.com
5
This document is subject to change without notice.
THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
IRF9Z34S, SiHF9Z34S, IRF9Z34L, SiHF9Z34L
Vishay Siliconix
1200
ID
Top
- 7.3 A
- 13 A
1000
800
Bottom - 18 A
600
400
200
0
VDD = - 25 V
25
125
75
100
150
175
50
91093_12c
Starting TJ, Junction Temperature (°C)
Fig. 12c - Maximum Avalanche Energy vs. Drain Current
Current regulator
Same type as D.U.T.
50 kΩ
QG
- 10 V
12 V
0.2 µF
0.3 µF
-
QGS
QGD
V
+
DS
D.U.T.
VG
VGS
- 3 mA
Charge
IG
ID
Current sampling resistors
Fig. 13a - Maximum Avalanche Energy vs. Drain Current
Fig. 13b - Gate Charge Test Circuit
www.vishay.com
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Document Number: 91093
S11-1052-Rev. C, 30-May-11
This document is subject to change without notice.
THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
IRF9Z34S, SiHF9Z34S, IRF9Z34L, SiHF9Z34L
Vishay Siliconix
Peak Diode Recovery dV/dt Test Circuit
D.U.T.
+
-
Circuit layout considerations
• Low stray inductance
• Ground plane
• Low leakage inductance
current transformer
+
-
+
-
Rg
+
-
• dV/dt controlled by Rg
• ISD controlled by duty factor “D”
• D.U.T. - device under test
VDD
Note
• Compliment N-Channel of D.U.T. for driver
Driver gate drive
P.W.
Period
Period
D =
P.W.
VGS = - 10 Va
D.U.T. lSD waveform
Reverse
recovery
current
Body diode forward
current
dI/dt
D.U.T. VDS waveform
Diode recovery
dV/dt
VDD
Re-applied
voltage
Body diode forward drop
Inductor current
ISD
Ripple ≤ 5 %
Note
a. VGS = - 5 V for logic level and - 3 V drive devices
Fig. 14 - For P-Channel
Vishay Siliconix maintains worldwide manufacturing capability. Products may be manufactured at one of several qualified locations. Reliability data for Silicon
Technology and Package Reliability represent a composite of all qualified locations. For related documents such as package/tape drawings, part marking, and
reliability data see www.vishay.com/ppg?91093.
Document Number: 91093
S11-1052-Rev. C, 30-May-11
www.vishay.com
7
This document is subject to change without notice.
THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
Package Information
Vishay Siliconix
TO-263AB (HIGH VOLTAGE)
A
B
(Datum A)
3
4
A
A
E
c2
H
L1
4
Gauge
plane
0° to 8°
4
B
5
Detail A
Seating plane
D
H
L
C
C
A1
L3
L4
Detail “A”
1
2
3
L2
Rotated 90° CW
B
B
scale 8:1
A
2 x b2
2 x b
c
E
M
M
B
0.010
A
M
0.004
B
2 x e
Base
metal
5
D1
4
Plating
(c)
b1, b3
5
c1
(b, b2)
Lead tip
4
E1
Section B - B and C - C
Scale: none
View A - A
MILLIMETERS
INCHES
MILLIMETERS
INCHES
DIM.
A
MIN.
4.06
0.00
0.51
0.51
1.14
1.14
0.38
0.38
1.14
8.38
MAX.
4.83
0.25
0.99
0.89
1.78
1.73
0.74
0.58
1.65
9.65
MIN.
0.160
0.000
0.020
0.020
0.045
0.045
0.015
0.015
0.045
0.330
MAX.
0.190
0.010
0.039
0.035
0.070
0.068
0.029
0.023
0.065
0.380
DIM.
D1
E
MIN.
6.86
MAX.
MIN.
MAX.
-
10.67
-
0.270
0.380
0.245
-
0.420
-
A1
b
9.65
6.22
E1
e
b1
b2
b3
c
2.54 BSC
0.100 BSC
H
14.61
15.88
2.79
1.65
1.78
0.575
0.625
0.110
0.066
0.070
L
1.78
0.070
L1
L2
L3
L4
-
-
-
-
c1
c2
D
0.25 BSC
0.010 BSC
4.78
5.28
0.188
0.208
ECN: S-82110-Rev. A, 15-Sep-08
DWG: 5970
Notes
1. Dimensioning and tolerancing per ASME Y14.5M-1994.
2. Dimensions are shown in millimeters (inches).
3. Dimension D and E do not include mold flash. Mold flash shall not exceed 0.127 mm (0.005") per side. These dimensions are measured at the
outmost extremes of the plastic body at datum A.
4. Thermal PAD contour optional within dimension E, L1, D1 and E1.
5. Dimension b1 and c1 apply to base metal only.
6. Datum A and B to be determined at datum plane H.
7. Outline conforms to JEDEC outline to TO-263AB.
Document Number: 91364
Revision: 15-Sep-08
www.vishay.com
1
AN826
Vishay Siliconix
2
RECOMMENDED MINIMUM PADS FOR D PAK: 3-Lead
0.420
(10.668)
0.145
(3.683)
0.135
(3.429)
0.200
0.050
(5.080)
(1.257)
Recommended Minimum Pads
Dimensions in Inches/(mm)
Return to Index
Document Number: 73397
11-Apr-05
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1
Legal Disclaimer Notice
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Vishay
Disclaimer
ALL PRODUCT, PRODUCT SPECIFICATIONS AND DATA ARE SUBJECT TO CHANGE WITHOUT NOTICE TO IMPROVE
RELIABILITY, FUNCTION OR DESIGN OR OTHERWISE.
Vishay Intertechnology, Inc., its affiliates, agents, and employees, and all persons acting on its or their behalf (collectively,
“Vishay”), disclaim any and all liability for any errors, inaccuracies or incompleteness contained in any datasheet or in any other
disclosure relating to any product.
Vishay makes no warranty, representation or guarantee regarding the suitability of the products for any particular purpose or
the continuing production of any product. To the maximum extent permitted by applicable law, Vishay disclaims (i) any and all
liability arising out of the application or use of any product, (ii) any and all liability, including without limitation special,
consequential or incidental damages, and (iii) any and all implied warranties, including warranties of fitness for particular
purpose, non-infringement and merchantability.
Statements regarding the suitability of products for certain types of applications are based on Vishay’s knowledge of typical
requirements that are often placed on Vishay products in generic applications. Such statements are not binding statements
about the suitability of products for a particular application. It is the customer’s responsibility to validate that a particular
product with the properties described in the product specification is suitable for use in a particular application. Parameters
provided in datasheets and/or specifications may vary in different applications and performance may vary over time. All
operating parameters, including typical parameters, must be validated for each customer application by the customer’s
technical experts. Product specifications do not expand or otherwise modify Vishay’s terms and conditions of purchase,
including but not limited to the warranty expressed therein.
Except as expressly indicated in writing, Vishay products are not designed for use in medical, life-saving, or life-sustaining
applications or for any other application in which the failure of the Vishay product could result in personal injury or death.
Customers using or selling Vishay products not expressly indicated for use in such applications do so at their own risk and agree
to fully indemnify and hold Vishay and its distributors harmless from and against any and all claims, liabilities, expenses and
damages arising or resulting in connection with such use or sale, including attorneys fees, even if such claim alleges that Vishay
or its distributor was negligent regarding the design or manufacture of the part. Please contact authorized Vishay personnel to
obtain written terms and conditions regarding products designed for such applications.
No license, express or implied, by estoppel or otherwise, to any intellectual property rights is granted by this document or by
any conduct of Vishay. Product names and markings noted herein may be trademarks of their respective owners.
Material Category Policy
Vishay Intertechnology, Inc. hereby certifies that all its products that are identified as RoHS-Compliant fulfill the
definitions and restrictions defined under Directive 2011/65/EU of The European Parliament and of the Council
of June 8, 2011 on the restriction of the use of certain hazardous substances in electrical and electronic equipment
(EEE) - recast, unless otherwise specified as non-compliant.
Please note that some Vishay documentation may still make reference to RoHS Directive 2002/95/EC. We confirm that
all the products identified as being compliant to Directive 2002/95/EC conform to Directive 2011/65/EU.
Revision: 12-Mar-12
Document Number: 91000
1
相关型号：
SIHF9Z34STRL-GE3
TRANSISTOR 18 A, 60 V, 0.14 ohm, P-CHANNEL, Si, POWER, MOSFET, TO-263AB, HALOGEN FREE AND ROHS COMPLIANT, TO-263, D2PAK-3, FET General Purpose Power
VISHAY
SIHF9Z34STRR-GE3
TRANSISTOR 18 A, 60 V, 0.14 ohm, P-CHANNEL, Si, POWER, MOSFET, TO-263AB, HALOGEN FREE AND ROHS COMPLIANT, TO-263, D2PAK-3, FET General Purpose Power
VISHAY
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