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IRFS634B [KERSEMI]

250V N-Channel MOSFET; 250V N沟道MOSFET
IRFS634B
元器件型号： IRFS634B
生产厂家： Kersemi Electronic Co., Ltd.    Kersemi Electronic Co., Ltd.
描述和应用：

250V N-Channel MOSFET
250V N沟道MOSFET
PDF文件： 总9页 (文件大小：896K)
下载文档：  下载PDF数据表文档文件
型号参数：IRFS634B参数
 查看货源

IRFS635

 TRANSISTOR | MOSFET | N-CHANNEL | 250V V(BR)DSS | 4.4A I(D) | TO-220VAR

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35 ETC

IRFS635

 Power Field-Effect Transistor, 4.4A I(D), 250V, 0.68ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB, TO-220F, 3 PIN

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0 SAMSUNG

IRFS640

 200V N-Channel MOSFET

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394 FAIRCHILD

IRFS640

 200V N-Channel MOSFET

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117 FAIRCHILD

IRFS640

 Improved inductive ruggedness

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55 SAMSUNG

IRFS640

 Power Field-Effect Transistor, 9.8A I(D), 200V, 0.18ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB, TO-220, 3 PIN

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1 SAMSUNG

IRFS640A

 Rugged Gate Oxide Technology

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46 FAIRCHILD

IRFS640A

 Improved gate charge

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84 SAMSUNG

IRFS640A

 TRANSISTOR | MOSFET | N-CHANNEL | 200V V(BR)DSS | 9.8A I(D) | TO-220AB

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452 ETC

IRFS640B

 200V N-Channel MOSFET

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241 FAIRCHILD

IRFS640B

 200V N-Channel MOSFET

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16 TGS

IRFS640B

 18A, 200V, 0.18ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220F, 3 PIN

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0 ROCHESTER

IRFS640B_FP001

 Power Field-Effect Transistor, 18A I(D), 200V, 0.18ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, LEAD FREE, TO-220F, 3 PIN

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0 FAIRCHILD

IRFS640B_FP001

 18A, 200V, 0.18ohm, N-CHANNEL, Si, POWER, MOSFET, LEAD FREE, TO-220F, 3 PIN

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0 ROCHESTER

IRFS641

 Improved inductive ruggedness

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21 SAMSUNG
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