BSR43 [KEXIN]

NPN Medium Power Transistors; NPN型中功率晶体管
BSR43
型号: BSR43
厂家: GUANGDONG KEXIN INDUSTRIAL CO.,LTD    GUANGDONG KEXIN INDUSTRIAL CO.,LTD
描述:

NPN Medium Power Transistors
NPN型中功率晶体管

晶体 晶体管
文件: 总2页 (文件大小:40K)
中文:  中文翻译
下载:  下载PDF数据表文档文件
SMD Type  
Transistors  
NPN Medium Power Transistors  
BSR40; BSR41; BSR42; BSR43  
SOT-89  
Unit: mm  
+0.1  
4.50  
-0.1  
+0.1  
1.50  
-0.1  
+0.1  
1.80  
-0.1  
Features  
High current (max. 1 A)  
Low voltage (max. 80 V).  
+0.1  
0.48  
-0.1  
+0.1  
0.53  
-0.1  
+0.1  
0.44  
-0.1  
1. Base  
+0.1  
3.00  
-0.1  
2. Collector  
3. Emiitter  
Absolute Maximum Ratings Ta = 25  
Parameter  
Collector-base voltage (open emitter) BSR40,BSR41  
BSR42,BSR43  
Symbol  
VCBO  
Rating  
70  
Unit  
V
90  
V
Collector-emitter voltage (open base) BSR40,BSR41  
BSR42,BSR43  
60  
V
VCEO  
80  
V
Emitter-base voltage (open collector)  
Collector current  
VEBO  
IC  
5
V
1
A
Peak collector current  
ICM  
2
A
Peak base current  
IBM  
0.2  
1.35  
A
Ptot  
W
Total power dissipation Tamb  
Storage temperature  
25  
;
Tstg  
Tj  
-65 to +150  
Junction temperature  
150  
-65 to +150  
93  
Operating ambient temperature  
Ramb  
Rth(j-a)  
Rth(j-s)  
Thermal resistance from junction to ambient  
K/W  
K/W  
Thermal resistance from junction to soldering point  
13  
1
www.kexin.com.cn  
SMD Type  
Transistors  
BSR40; BSR41; BSR42; BSR43  
Electrical Characteristics Ta = 25  
Parameter  
Symbol  
ICBO  
Testconditons  
IE = 0; VCB = 60 V  
Min  
Typ  
Max  
100  
50  
Unit  
nA  
Collector cutoff current  
ìA  
nA  
IE = 0; VCB = 60 V; Tj = 150  
IC = 0; VEB = 5 V  
Emitter cutoff current  
IEBO  
100  
DC current gain *  
DC current gain *  
DC current gain *  
BSR40,BSR42  
10  
30  
hFE  
IC = 100 mA; VCE = 5 V;  
IC = 100 mA; VCE = 5 V  
IC = 500 mA; VCE = 5 V;  
BSR41,BSR43  
BSR40,BSR42  
BSR41,BSR43  
BSR40,BSR42  
BSR41,BSR43  
40  
120  
300  
hFE  
hFE  
100  
30  
50  
IC = 150 mA; IB = 15 mA  
250  
500  
1
mV  
mV  
V
collector-emitter saturation voltage  
base-emitter saturation voltage *  
*
VCEsat  
VBEsat  
IC = 500 mA; IB = 50 mA  
IC = 150 mA; IB = 15 mA  
IC = 500 mA; IB = 50 mA  
1.2  
12  
V
Collector capacitance  
Emitter capacitance  
Transition frequency  
Turn-on time  
Cc  
Ce  
fT  
IE = ie = 0; VCB = 10 V; f = 1 MHz  
IC = ic = 0; VEB = 0.5 V; f = 1 MHz  
IC = 50 mA; VCE = 10 V; f = 100 MHz  
pF  
pF  
MHz  
ns  
90  
100  
ton  
toff  
250  
1
ICon = 100 mA; IBon = 5 mA;  
IBoff = -5 mA  
Turn-off time  
ìs  
* Pulse test: tp = 300 ìs; ä  
0.01.  
hFE Classification  
TYPE  
BSR40  
AR1  
BSR41  
AR2  
BSR42  
AR3  
BSR43  
AR4  
Marking  
2
www.kexin.com.cn  

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