FMMT458 [KEXIN]
High Voltage Transistor; 高压晶体管
| 型号： | FMMT458 |
| 厂家： | 
GUANGDONG KEXIN INDUSTRIAL CO.,LTD |
| 描述： | High Voltage Transistor |
| 文件： | 总2页 (文件大小：36K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
SMD Type
Transistors
High Voltage Transistor
FMMT458
SOT-23
Unit: mm
+0.1
2.9
-0.1
+0.1
0.4
-0.1
3
Features
400 Volt VCEO
1
2
+0.1
0.95
-0.1
+0.05
0.1
-0.01
+0.1
1.9
-0.1
1.Base
2.Emitter
3.collector
Absolute Maximum Ratings Ta = 25
Parameter
Collector-base voltage
Collector-emitter voltage
Emitter-base voltage
Symbol
VCBO
VCEO
VEBO
ICM
Rating
Unit
400
V
V
400
5
1
V
Peak collector current
Collector current
A
IC
225
mA
mA
mW
Base current
IB
200
Power dissipation
Ptot
500
Operating and storage temperature range
Tj,Tstg
-55 to +150
1
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SMD Type
Transistors
FMMT458
Electrical Characteristics Ta = 25
Parameter
Symbol
Testconditons
Min
400
400
5
Typ
Max
Unit
V
Collector-base breakdown voltage
Collector-emitter breakdown voltage
Emitter-base breakdown voltage
Collector cutoff current
V(BR)CBO IC=100ìA
V(BR)CEO IC=10mA
V(BR)EBO IE=100ìA
V
V
ICBO
ICES
IEBO
VCB=320V
100
100
100
0.2
0.5
0.9
0.9
nA
nA
nA
V
Collector Cut-Off Current
VCE=320V
Emitter cut-off current
VEB=4V
IC=20mA,IB=2mA
IC=50mA,IB=6mA
Collector-emitter saturation voltage
VCE(sat)
V
Base-emitter saturation voltage
Base-emitter turn on voltage
VBE(sat) IC=50mA,IB=5mA
VBE(on) IC=50mA,VCE=10V
IC=1mA, VCE=10V
V
V
100
100
15
Static Forward Current Transfer Ratio
hFE
IC=50mA, VCE=10V*
IC=100mA, VCE=10V*
IC=10mA,VCE=20V,f=20MHz
VCB=20V, f=1MHz
300
Transition frequency
Output capacitance
fT
50
MHz
pF
Cobo
ton
toff
5
IC=50mA, VCC=100V
IB1=5mA, IB2=-10mA
135
ns
Switching times
2260
ns
Marking
Marking
458
2
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相关型号：
FMMT458QTA
Small Signal Bipolar Transistor, 0.225A I(C), 400V V(BR)CEO, 1-Element, NPN, Silicon, GREEN, PLASTIC PACKAGE-3
DIODES
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