HSB276S [KEXIN]
Silicon Schottky Barrier Diode; 硅肖特基二极管
| 型号： | HSB276S |
| 厂家： | 
GUANGDONG KEXIN INDUSTRIAL CO.,LTD |
| 描述： | Silicon Schottky Barrier Diode |
| 文件： | 总1页 (文件大小：44K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
SMD Type
Diodes
Silicon Schottky Barrier Diode
HSB276S
Features
High forward current, Low capacitance.
HSB276S which is interconnected in series
configuration is designed for balanced mixer use.
CMPAK package is suitable for high density surface mounting and high speed assembly.
A b s o lu te M a x im u m R a tin g s T a = 2 5
P a ra m e te r
R e v e rs e v o lta g e
S y m b o l
V a lu e
U n it
V
V R
IO
3
3 0
A v e ra g e re c tifie d c u rre n t
J u n c tio n te m p e ra tu re
S to ra g e te m p e ra tu re
m A
T j
1 2 5
T s tg
-5 5 to + 1 2 5
Electrical Characteristics Ta = 25
Parameter
Forward voltage
Symbol
Conditions
Min
Typ
Max
50
Unit
V
VF
IR
IF =1.0 mA
VR =0.5 V
VF =0.5 V
3
Reverse current
Forward current
Capacitance
A
IF
35
mA
pF
pF
C
VR = 0.5 V, f = 1 MHz
VR = 0.5V, f = 1 MHz
0.90
0.10
Capacitance deviation
ÄC
C=200pF, Both forward and
reverse direction 1 pulse.
ESD-Capability (Note 1)
30
V
Note
1. Failure criterion ; IR
100 A at VR =0.5 V
Marking
Marking
C2
1
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