KI5447DC [KEXIN]
P-Channel 20-V (D-S) MOSFET; P通道20 -V （D -S ）的MOSFET
| 型号： | KI5447DC |
| 厂家： | 
GUANGDONG KEXIN INDUSTRIAL CO.,LTD |
| 描述： | P-Channel 20-V (D-S) MOSFET |
| 文件： | 总2页 (文件大小：63K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
SMD Type
IC
P-Channel 20-V (D-S) MOSFET
KI5447DC
Features
Absolute Maximum Ratings Ta = 25
Parameter
Drain-Source Voltage
Symbol
VDS
5 secs
Steady State
-20
Unit
V
Gate-Source Voltage
8
VGS
-4.8
-3.5
-2.5
TA = 25
ID
Continuous Drain Current (TJ = 150 ) *
-3.5
TA = 85
A
Pulsed Drain Current
-15
IDM
IS
Continuous Source Current *
-2.1
2.5
1.3
-1.1
1.3
0.7
TA = 25
TA = 85
Maximum Power Dissipation *
PD
W
Operating Junction and Storage Temperature Range
Soldering Recommendations (Peak Temperature)
Parameter
-55 to 150
260
TJ, Tstg
Symbol
RthJA
Typ
43
Max
50
Unit
/W
t
5 sec
Maximum Junction-to-Ambient*
Steady-State
Steady-State
83
95
Maximum Junction-to-Foot (Drain)
RthJF
14
20
* Surface Mounted on 1" X 1' FR4 Board.
1
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SMD Type
IC
KI5447DC
Electrical Characteristics Ta = 25
Parameter
Gate Threshold Voltage
Gate-Body Leakage
Symbol
VGS(th)
IGSS
Testconditons
VDS = VGS, ID = -250
Min
Typ
Max
Unit
V
-0.45
A
nA
A
VDS = 0 V, VGS = 8 V
VDS = -16V, VGS = 0 V
VDS = -16V, VGS = 0 V, TJ = 85
VDS - 5 V, VGS = -4.5 V
VGS = -4.5 V, ID = -3.5A
VGS = -2.5 V, ID = -2.9A
VGS = -1.8 V, ID = -1A
100
-1
Zero Gate Voltage Drain Current
On-State Drain Current*
IDSS
-5
A
ID(on)
-15
A
0.064
0.091
0.130
9
0.076
0.110
0.160
Drain-Source On-State Resistance*
rDS(on)
Forward Transconductance*
Schottky Diode Forward Voltage*
Total Gate Charge
gfs
VSD
Qg
VDS = -10 V, ID = -3.5A
IS = -1.1 A, VGS = 0 V
S
-0.8
6.5
1.4
1.3
14
-1.2
10
V
nC
nC
nC
ns
ns
ns
ns
ns
Gate-Source Charge
Gate-Drain Charge
Qgs
Qgd
td(on)
tr
VDS = -10V, VGS = -4.5 V, ID = -3.5 A
Turn-On Delay Time
Rise Time
21
45
65
55
60
29
VDD = -10 V, RL = 10
Turn-Off Delay Time
Fall Time
td(off)
tf
42
ID = -1 A, VGEN = -4.5V, RG = 6
35
Source-Drain Reverse Recovery Time
trr
30
IF = -1.1 A, di/dt = 100 A/
s
* Pulse test; pulse width
300 s, duty cycle
2%.
2
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