KMBT2222A [KEXIN]
NPN Switching Transistor; NPN开关晶体管
| 型号： | KMBT2222A |
| 厂家： | 
GUANGDONG KEXIN INDUSTRIAL CO.,LTD |
| 描述： | NPN Switching Transistor |
| 文件： | 总3页 (文件大小：237K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
SMD Type
Transistors
NPN Switching Transistor
KMBT2222A
SOT-23
Unit: mm
+0.1
2.9
-0.1
+0.1
-0.1
0.4
3
■ Features
● High current (max. 600 mA)
● Low voltage (max.40 V).
1
2
+0.1
0.95
-0.1
+0.05
0.1
-0.01
+0.1
-0.1
1.9
1.Base
2.Emitter
3.collector
■ Absolute Maximum Ratings Ta = 25℃
Parameter
Collector-base voltage
Symbol
VCBO
VCEO
VEBO
IC
Rating
Unit
V
75
Collector-emitter voltage
40
6
V
Emitter-base voltage
V
Collector current
600
mA
mW
K/W
℃
Ptot
300
Total power dissipation Ta≤ 25 ℃
Thermal resistance from junction to ambient
Operating and Storage and Temperature Range
RèJA
417
Tj, TSTG
-65 to +150
1
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SMD Type
Transistors
KMBT2222A
■ Electrical Characteristics Ta = 25℃
Parameter
Symbol
Testconditons
Min
75
40
6
Typ Max
Unit
V
Collector-Base Breakdown Voltage
V(BR)CBO
IC = 10μA, IE = 0
Collector-Emitter Breakdown Voltage V(BR)CEO IC = 10 mA, IB = 0
V
Emitter-Base Breakdown Voltage
V(BR)EBO
V
IC = 10 μA, IC = 0
IE = 0; VCB = 60 V
10
10
10
nA
μA
nA
Collector cutoff current
ICBO
IE = 0; VCB = 60 V; Tj = 125 ℃
IC = 0; VEB = 3 V
Emitter cutoff current
IEBO
IC = 0.1 mA; VCE = 10 V
IC = 1 mA; VCE = 10 V
IC = 10 mA; VCE = 10 V
35
50
75
DC current gain
hFE
35
IC = 10 mA; VCE = 10 V; Ta = -55 ℃
IC= 150 mA; VCE = 10 V
100
50
300
IC = 150 mA; VCE = 1 V
IC = 500 mA; VCE = 10 V
40
300
1
1.2
2
mV
V
IC = 150 mA; IB = 15 mA
IC = 500 mA; IB = 50 mA
IC = 150 mA; IB = 15 mA
IC = 500 mA; IB = 50 mA
collector-emitter saturation voltage
VCEsat
0.6
V
base-emitter saturation voltage
VBEsat
V
Delay time
td
tr
15
25
200
60
8
ns
ns
ns
ns
pF
pF
dB
IB1 = 15 mA, IC = 150 mA,
VCC = 30V, VBE = -0.5 V
Rise time
Storage time
Fall time
ts
IB1 = IB2 = 15 mA,
tf
IC = 150 mA, VCC = 30V
Output Capacitance
Input Capacitance
Noise Figure
Cobo
Cibo
NF
fT
VCB = 10V, f = 1.0MHz, IE = 0
VEB = 0.5V, f = 1.0MHz, IC = 0
VCE = 10 V, IC = 100 μA,RS = 1 kΩ, f = 1 kHz
25
4
Transition frequency
300
MHz
IC = 20 mA; VCE = 20 V; f = 100 MHz
■ Marking
Marking
1P
2
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SMD Type
Transistors
KMBT2222A
1000
350
300
250
TA = 125°C
100
TA = +25°C
TA = -25°C
200
150
10
100
50
0
VCE = 1.0V
1
200
0
175
25
50
150
75 100 125
1
1000
10
0.1
100
TA, AMBIENT TEMPERATURE (°C)
IC, COLLECTOR CURRENT (mA)
Fig. 1, Max Power Dissipation vs
Ambient Temperature
Fig. 2, Typical DC Current Gain vs
Collector Current
2.0
30
20
IC = 30mA
1.8
1.6
1.4
1.2
1.0
IC = 1mA
IC = 10mA
Cibo
IC = 100mA
10
IC = 300mA
0.8
0.6
0.4
5.0
1.0
Cobo
0.2
0
0.1
0.001
0.01
10
100
1
1.0
10
50
0.1
IB, BASE CURRENT (mA)
Fig. 4 Typical Collector Saturation Region
REVERSE VOLTS (V)
Fig. 3 Typical Capacitance
3
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