MJD340 [KEXIN]
NPN Epitaxial Silicon Transistor; NPN外延硅晶体管
| 型号： | MJD340 |
| 厂家： | 
GUANGDONG KEXIN INDUSTRIAL CO.,LTD |
| 描述： | NPN Epitaxial Silicon Transistor |
| 文件： | 总1页 (文件大小：38K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
SMD Type
Transistors
NPN Epitaxial Silicon Transistor
MJD340
TO-252
Unit: mm
6.50+0.15
-0.15
2.30+0.1
-0.1
5.30+0.2
0.50+0.8
-0.7
Features
-0.2
Load Formed for Surface Mount Application
Straight Lead
0.127
0.80+0.1
max
-0.1
0.60+0.1
2.3
4.60+0.15
-0.1
1 Base
-0.15
2 Collector
3 Emitter
Absolute Maximum Ratings Ta = 25 unless otherwise noted
Parameter
Collector-Base Voltage
Symbol
VCBO
VCEO
VEBO
IC
Rating
300
Unit
V
Collector-Emitter Voltage
Emitter-Base Voltage
300
V
3
V
Collector Current (DC)
Collector Current (Pulse)
Collector Dissipation (TC = 25
Collector Dissipation (Ta = 25
Junction Temperature
0.5
A
ICP
0.75
15
A
A
)
PC
1.56
150
W
W
)
TJ
Storage Temperature
TSTG
-65 to 150
Electrical Characteristics Ta = 25 unless otherwise noted
Parameter
Collector-Emitter Sustaining Voltage *
Collector Cut-off Current
Symbol
VCEO(sus)
ICEO
Testconditons
Min
300
Typ
Max
Unit
V
IC = 1mA, IB = 0
VCB = 300V, IE =0
VEB = 3V, IC = 0
0.1
0.1
240
mA
mA
Emitter Cut-off Current
IEBO
DC Current Gain *
hFE
VCE = 10V, IC = 50mA
30
*Pulse Test: PW 300ìs, Duty Cycle 2%
1
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