OPA8930HN [KODENSHI]
Infrared LED Chip; 红外LED芯片
| 型号： | OPA8930HN |
| 厂家： | 
KODENSHI KOREA CORP. |
| 描述： | Infrared LED Chip |
| 文件： | 总1页 (文件大小：99K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
Infrared LED Chip
OPA8930HN
High Speed / N Side-Up
GaAlAs/GaAlAs
Substrate
GaAlAs (P Type) Removed
1. Material
Epitaxial Layer GaAlAs (N/P Type)
N(Cathode) Side Gold Alloy
P(Anode) Side Gold Alloy
2. Electrode
Parameter Symbol Min
Typ
Max
Unit
V
Condition
IF=10uA
IF=50mA
IR=10uA
IF=50mA
3. Electro-Optical
Characteristics
VF(1)
Forward Voltage
VF(2)
1.1
1.8
V
VR
PO
λP
Reverse Voltage
Power
4
V
24
mW
nm
888
IF=50mA
IF=50mA
Wavelength
∆λ
Tr
Tf
45
25
20
nm
ns
ns
Rise Time
Fall Time
※ Note : Power is measured by Sorter E/T system with bare chip.
(a) Emission Area
(b) Bottom Area
--------------------- 10.8mil x 10.8mil
--------------------- 11.8mil x 11.8mil
4. Mechanical Data
(c) Bonding Pad
(d) Chip Thickness
(e) Junction Height
---------------------
---------------------
---------------------
130um
7mil
4.6mil
(b)
(c)
(d)
(e)
(a)
N
P
Side Electrode
Side Electrode
AUK Corp.
Eoyang factory,513-5 Eoyang-dong, Iksan, 570-210, Korea
Tel. +82 63 839 1111 Fax. +82 63 835 8259
www.auk.co.kr
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