SMK0465IS [KODENSHI]

SWWITCHINNGREGGULATOORAPPLICATIOON; SWWITCHINNGREGGULATOORAPPLICATIOON
SMK0465IS
型号: SMK0465IS
厂家: KODENSHI KOREA CORP.    KODENSHI KOREA CORP.
描述:

SWWITCHINNGREGGULATOORAPPLICATIOON
SWWITCHINNGREGGULATOORAPPLICATIOON

文件: 总8页 (文件大小:486K)
中文:  中文翻译
下载:  下载PDF数据表文档文件
SMK0465IS  
Advanced N-Ch Power MOSFET  
SWITCHING REGULATOR APPLICATION  
Features  
Drain-source breakdown voltage: BVDSS=650V  
Low gate charge: Qg=11.2nC (Typ.)  
Low drain-source On-resistance: RDS(on)=3(Max.)  
RoHS compliant device  
Halogen free package  
Ordering Information  
G D S  
Part Number  
Marking  
Package  
I-PAK (Short Lead)  
I-PAK  
SMK0465IS  
SMK0465  
(Short lead)  
Marking Information  
SMK  
0465  
YWW  
Column 1, 2: Device Code  
Column 3: Production Information  
e.g.) YWW  
-. YWW: Date Code (year, week)  
Absolute maximum ratings (TC=25°C unless otherwise noted)  
Characteristic  
Symbol  
Rating  
Unit  
Drain-source voltage  
VDSS  
VGSS  
650  
±30  
4
V
V
Gate-source voltage  
Drain current (DC) *  
A
Tc=25°C  
ID  
2.5  
16  
A
Tc=100°C  
Drain current (Pulsed) *  
IDM  
IAR  
A
Single avalanche current (Note 2)  
Single pulsed avalanche energy (Note 2)  
Repetitive avalanche current (Note 1)  
Repetitive avalanche energy (Note 1)  
Power dissipation  
4
A
EAS  
IAR  
81.5  
4
mJ  
A
EAR  
PD  
3.4  
48  
mJ  
W
°C  
°C  
Junction temperature  
TJ  
150  
-55~150  
Storage temperature range  
Tstg  
* Limited only maximum junction temperature  
Rev. date: 16-JUL-12  
KSD-T6Q016-000  
www.auk.co.kr  
1 of 8  
SMK0465IS  
Thermal Characteristics  
Characteristic  
Symbol  
Rth(j-c)  
Rating  
Max. 2.6  
Max. 62.5  
Unit  
Thermal resistance, junction to case  
Thermal resistance, junction to ambient  
°C/W  
Rth(j-a)  
Electrical Characteristics (TC=25°C unless otherwise noted)  
Characteristic  
Drain-source breakdown voltage  
Gate threshold voltage  
Symbol  
Test Condition  
Min.  
Typ. Max.  
Unit  
BVDSS  
ID=250uA, VGS=0  
650  
-
-
-
V
V
VGS(th)  
ID=250uA, VDS=VGS  
VDS=650V, VGS=0V  
VDS=650V, Tc=125°C  
VDS=0V, VGS=±30V  
VGS=10V, ID=2A  
2
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
4
-
1
uA  
uA  
nA  
Ω
Drain-source cut-off current  
IDSS  
-
100  
Gate leakage current  
IGSS  
RDS(ON)  
gfs  
-
±100  
Drain-source on-resistance  
Forward transfer conductance (Note 3)  
Input capacitance  
2.4  
4
3
VDS=10V, ID=2A  
-
S
Ciss  
Coss  
Crss  
td(on)  
tr  
703  
54.6  
5.6  
10  
42  
38  
46  
11.2  
3.9  
2.5  
878  
VDS=25V, VGS=0V,  
f=1.0MHz  
Output capacitance  
68.2  
pF  
ns  
Reverse transfer capacitance  
Turn-on delay time (Note 3,4)  
Rise time (Note 3,4)  
7.0  
-
-
V
DD=300V, ID=4A  
RG=25  
Turn-off delay time (Note 3,4)  
Fall time (Note 3,4)  
td(off)  
tf  
-
-
Total gate charge (Note 4,5)  
Gate-source charge (Note 3,4)  
Gate-drain charge (Note 3,4)  
Qg  
14  
-
VDS=520V, VGS=10V  
ID=4A  
Qgs  
Qgd  
nC  
-
Source-Drain Diode Ratings and Characteristics (TC=25°C unless otherwise noted)  
Characteristic  
Symbol  
Test Condition  
Min.  
Typ. Max.  
Unit  
A
Source current (DC)  
IS  
ISM  
VSD  
trr  
-
-
-
-
-
-
-
4
16  
1.4  
-
Integral reverse diode  
in the MOSFET  
Source current (Pulsed)  
Forward voltage  
A
VGS=0V, IS=4A  
-
V
Reverse recovery time (Note 3, 4)  
Reverse recovery charge (Note 4,5)  
Note:  
300  
2.2  
ns  
uC  
IS=4A, VGS=0V  
dIF/dt=100A/us  
Qrr  
-
1. Repeated rating: Pulse width limited by safe operating area  
2. L=9.4mH, IAS=4A, VDD=50V, RG=25Ω, Starting TJ=25°C  
3. Pulse test: Pulse width300us, Duty cycle2%  
4. Essentially independent of operating temperature typical characteristics  
Rev. date: 16-JUL-12  
KSD-T6Q016-000  
www.auk.co.kr  
2 of 8  
SMK0465IS  
Electrical Characteristic Curves  
Fig. 2 ID - VGS  
Fig. 1 ID - VDS  
:
-
Fig. 3 RDS(on) - ID  
Fig. 4 IS - VSD  
Fig. 5 Capacitance - VDS  
Fig. 6 VGS - QG  
Rev. date: 16-JUL-12  
KSD-T6Q016-000  
www.auk.co.kr  
3 of 8  
SMK0465IS  
Electrical Characteristic Curves (Continue)  
Fig. 8 RDS(on) - TJ  
Fig. 7 VDSS - TJ  
C
C
Fig. 9 ID - TC  
Fig. 10 Safe Operating Area  
*
Rev. date: 16-JUL-12  
KSD-T6Q016-000  
www.auk.co.kr  
4 of 8  
SMK0465IS  
Fig. 11 Gate Charge Test Circuit & Waveform  
Fig. 12 Resistive Switching Test Circuit & Waveform  
Fig. 13 EAS Test Circuit & Waveform  
Rev. date: 16-JUL-12  
KSD-T6Q016-000  
www.auk.co.kr  
5 of 8  
SMK0465IS  
Fig. 14 Diode Reverse Recovery Time Test Circuit & Waveform  
Rev. date: 16-JUL-12  
KSD-T6Q016-000  
www.auk.co.kr  
6 of 8  
SMK0465IS  
Package Outline Dimensions  
Rev. date: 16-JUL-12  
KSD-T6Q016-000  
www.auk.co.kr  
7 of 8  
SMK0465IS  
The AUK Corp. products are intended for the use as components in general electronic  
equipment (Office and communication equipment, measuring equipment, home  
appliance, etc.).  
Please make sure that you consult with us before you use these AUK Corp. products  
in equipments which require high quality and / or reliability, and in equipments which  
could have major impact to the welfare of human life(atomic energy control, airplane,  
spaceship, transportation, combustion control, all types of safety device, etc.). AUK  
Corp. cannot accept liability to any damage which may occur in case these AUK Corp.  
products were used in the mentioned equipments without prior consultation with AUK  
Corp..  
Specifications mentioned in this publication are subject to change without notice.  
Rev. date: 16-JUL-12  
KSD-T6Q016-000  
www.auk.co.kr  
8 of 8  

相关型号:

SMK0760F

SWITCHING REGULATOR APPLICATIONS
KODENSHI

SMK0765F

SWITCHING REGULATOR APPLICATIONS
KODENSHI

SMK0765F(HF)

SWITCHING REGULATOR APPLICATIONS
KODENSHI

SMK0765F-1

SWITCHING REGULATOR APPLICATIONS
KODENSHI

SMK0765FJ

SWITCHING REGULATOR APPLICATIONS
KODENSHI

SMK0765FJ-1

SWITCHING REGULATOR APPLICATIONS
KODENSHI

SMK0780FD

SWITCHING REGULATOR APPLICATION
KODENSHI

SMK0825D

SWITCHING REGULATOR APPLICATION
KODENSHI

SMK0825D2

SWITCHING REGULATOR APPLICATION
KODENSHI

SMK0825F

SWITCHING REGULATOR APPLICATIONS
KODENSHI

SMK0825F-1

SWITCHING REGULATOR APPLICATIONS
KODENSHI

SMK0825FC

SWITCHING REGULATOR APPLICATIONS
KODENSHI