STK0380F [KODENSHI]

SWITCHING REGULATOR APPLICATION; 开关稳压器的应用
STK0380F
型号: STK0380F
厂家: KODENSHI KOREA CORP.    KODENSHI KOREA CORP.
描述:

SWITCHING REGULATOR APPLICATION
开关稳压器的应用

稳压器 开关
文件: 总8页 (文件大小:372K)
中文:  中文翻译
下载:  下载PDF数据表文档文件
STK0380F  
Advanced N-Ch Power MOSFET  
SWITCHING REGULATOR APPLICATION  
Features  
Drain-source breakdown voltage: BVDSS=800V (Min.)  
Low gate charge: Qg=14.2nC (Typ.)  
Low drain-source On resistance: RDS(on)=3.5(Typ.)  
RoHS compliant device  
100% avalanche tested  
Ordering Information  
G D S  
Part Number  
Marking  
Package  
TO-220F-3L  
STK0380F  
STK0380  
TO-220F-3L  
Marking Information  
Column 1 : Manufacturer  
Column 2 : Production Information  
e.g.) GFYMDD  
-. G : Option Code (H : Halogen Free)  
-. F : Factory Management Code  
-. YMDD : Date Code (Year, Month, Date)  
Column 3 : Device Code  
AUK  
GFYMDD  
STK0380  
Absolute maximum ratings (TC=25C unless otherwise noted)  
Characteristic  
Symbol  
Rating  
Unit  
Drain-source voltage  
VDSS  
VGSS  
800  
30  
3
V
V
Gate-source voltage  
Drain current (DC) *  
A
Tc=25C  
ID  
1.8  
A
Tc=100C  
Drain current (Pulsed) *  
IDM  
EAS  
IAR  
12  
A
Single pulsed avalanche energy (Note 2)  
Repetitive avalanche current (Note 1)  
Repetitive avalanche energy (Note 1)  
Power dissipation  
335  
3
mJ  
A
EAR  
PD  
11.5  
30  
mJ  
W
C  
C  
Junction temperature  
TJ  
150  
-55~150  
Storage temperature range  
Tstg  
* Limited only maximum junction temperature  
Rev. date: 28-MAR-13  
KSD-T0O024-002  
www.auk.co.kr  
1 of 8  
STK0380F  
Thermal Characteristics  
Characteristic  
Symbol  
Rth(j-c)  
Rating  
Unit  
Thermal resistance, junction to case  
Thermal resistance, junction to ambient  
Max. 4.16  
Max. 62.5  
C/W  
Rth(j-a)  
Electrical Characteristics (TC=25C unless otherwise noted)  
Characteristic  
Drain-source breakdown voltage  
Gate threshold voltage  
Symbol  
BVDSS  
VGS(th)  
IDSS  
IGSS  
RDS(ON)  
gfs  
Test Condition  
Min.  
Typ. Max.  
Unit  
ID=250uA, VGS=0  
800  
-
-
-
5
V
V
ID=250uA, VDS=VGS  
VDS=800V, VGS=0V  
VDS=0V, VGS=30V  
VGS=10V, ID=1.5A  
VDS=50V, ID=1.5A  
3
-
-
-
-
-
-
-
-
-
-
-
-
-
-
Drain-source cut-off current  
Gate leakage current  
-
1
uA  
nA  
-
100  
4.5  
-
Drain-source on-resistance (Note 3)  
Forward transfer conductance (Note 3)  
Input capacitance  
3.5  
2.5  
706  
54  
3.9  
16  
44  
22  
32  
14.2  
3.4  
5.4  
S
Ciss  
917  
70  
7.2  
42  
98  
56  
76  
-
VDS=25V, VGS=0V,  
f=1.0MHz  
Output capacitance  
Coss  
Crss  
td(on)  
tr  
pF  
ns  
Reverse transfer capacitance  
Turn-on delay time (Note 3,4)  
Rise time (Note 3,4)  
VDD=400V, ID=3A  
RG=25  
Turn-off delay time (Note 3,4)  
Fall time (Note 3,4)  
td(off)  
tf  
Total gate charge (Note 3,4)  
Gate-source charge (Note 3,4)  
Gate-drain charge (Note 3,4)  
Qg  
VDS=640V, VGS=10V  
ID=3A  
Qgs  
-
nC  
Qgd  
-
Source-Drain Diode Ratings and Characteristics (TC=25C unless otherwise noted)  
Characteristic  
Symbol  
Test Condition  
Min.  
Typ. Max.  
Unit  
A
Source current (DC)  
IS  
ISM  
VSD  
trr  
-
-
-
-
-
-
-
3
12  
1.4  
-
Integral reverse diode  
in the MOSFET  
Source current (Pulsed)  
Forward voltage  
A
VGS=0V, IS=3A  
-
V
Reverse recovery time (Note 3,4)  
Reverse recovery charge (Note 3,4)  
Note:  
520  
3.2  
ns  
uC  
IS=3A, VGS=0V  
dIF/dt=100A/us  
Qrr  
-
1. Repeated rating: Pulse width limited by safe operating area  
2. L=69.7mH, IAS=3A, VDD=50V, RG=25, Starting TJ=25C  
3. Pulse test: Pulse width300us, Duty cycle2%  
4. Essentially independent of operating temperature typical characteristics  
Rev. date: 28-MAR-13  
KSD-T0O024-002  
www.auk.co.kr  
2 of 8  
STK0380F  
Electrical Characteristic Curves  
Fig. 2 ID - VGS  
Fig. 1 ID - VDS  
-
Fig. 3 RDS(on) - ID  
Fig. 4 IS - VSD  
Fig. 6 VGS - QG  
Fig. 5 Capacitance - VDS  
Rev. date: 28-MAR-13  
KSD-T0O024-002  
www.auk.co.kr  
3 of 8  
STK0380F  
Electrical Characteristic Curves (Continue)  
Fig. 8 RDS(on) - TJ  
Fig. 7 VDSS - TJ  
C
C
Fig. 9 ID - TC  
Fig. 10 Safe Operating Area  
*
Rev. date: 28-MAR-13  
KSD-T0O024-002  
www.auk.co.kr  
4 of 8  
STK0380F  
Fig. 11 Gate Charge Test Circuit & Waveform  
Fig. 12 Resistive Switching Test Circuit & Waveform  
Fig. 13 EAS Test Circuit & Waveform  
Rev. date: 28-MAR-13  
KSD-T0O024-002  
www.auk.co.kr  
5 of 8  
STK0380F  
Fig. 14 Diode Reverse Recovery Time Test Circuit & Waveform  
Rev. date: 28-MAR-13  
KSD-T0O024-002  
www.auk.co.kr  
6 of 8  
STK0380F  
Package Outline Dimensions  
Rev. date: 28-MAR-13  
KSD-T0O024-002  
www.auk.co.kr  
7 of 8  
STK0380F  
The AUK Corp. products are intended for the use as components in general electronic  
equipment (Office and communication equipment, measuring equipment, home  
appliance, etc.).  
Please make sure that you consult with us before you use these AUK Corp. products  
in equipments which require high quality and / or reliability, and in equipments which  
could have major impact to the welfare of human life(atomic energy control, airplane,  
spaceship, transportation, combustion control, all types of safety device, etc.). AUK  
Corp. cannot accept liability to any damage which may occur in case these AUK Corp.  
products were used in the mentioned equipments without prior consultation with AUK  
Corp..  
Specifications mentioned in this publication are subject to change without notice.  
Rev. date: 28-MAR-13  
KSD-T0O024-002  
www.auk.co.kr  
8 of 8  

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