S-LM1MA142WKT1G [LEIDITECH]
Common Cathode Silicon Dual Switching Diode;
| 型号： | S-LM1MA142WKT1G |
| 厂家： | 
Leiditech |
| 描述： | Common Cathode Silicon Dual Switching Diode |
| 文件： | 总4页 (文件大小：554K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
LM1MA141WKT1G, S-LM1MA141WKT1G
LM1MA142WKT1G, S-LM1MA142WKT1G
Common Cathode Silicon
Dual Switching Diode
This Common Cathode Silicon Epitaxial Planar Dual Diode is designed for
use in ultra high speed switching applications. This device is housed in the
SC-70 package which is designed for low power surface mount applications.
SC–70/SOT–323 PACKAGE
COMMON CATHODE
DUAL SWITCHING DIODE
40/80 V–100 mA
z• Fast trr, < 3.0 ns
• Low C , < 2.0 pF
z
D
We declare that the material of product
z
SURFACE MOUNT
compliance with RoHS requirements.
S- Prefix for Automotive and Other Applications Requiring
Unique Site and Control Change Requirements; AEC-Q101
z
3
Qualified and PPAP Capable.
MAXIMUM RATINGS (TA = 25°C)
1
Rating
Symbol Value
Unit
2
Reverse Voltage
LM1MA141WKT1G VR
LM1MA142WKT1G
M1MA141WKT1G
40
80
Vdc
SC – 70
Peak Reverse Voltage
Forward Current
L
V
RM
40
Vdc
LM1MA142WKT1
Single
80
G
IF
100
150
225
340
500
750
mAdc
mAdc
mAdc
Dual
Peak Forward Current
Peak Forward Surge Current
Single
IFM
Dual
(1)
Single
IFSM
Dual
Marking Symbol
MTX
Type No.141WK142WK
THERMAL CHARACTERISTICS
Symbol
MT
MU
Rating
Symbol
PD
Max
150
150
Unit
mW
°C
The “X” represents a smaller alpha digit Date
Code. The Date Code indicates the actual month
in which the part was manufactured.
Power Dissipation
Junction Temperature
Storage Temperature
TJ
Tstg
–55 ~ +150
°C
ELECTRICAL CHARACTERISTICS (T = 25°C)
A
Characteristic
Symbol
Condition
Min
—
Max
0.1
0.1
1.2
—
Unit
G
Reverse Voltage Leakage Current LM1MA141WKT1
LM1MA142WKT1
IR
VR = 35 V
VR = 75 V
µAdc
—
G
Forward Voltage
VF
VR
IF = 100 mA
IR = 100 µA
—
Vdc
Vdc
G
G
Reverse Breakdown Voltage
LM1MA141WKT1
40
80
—
LM1MA142WKT1
—
Diode Capacitance
Reverse Recovery
CD
VR=0, f=1.0 MHz
IF=10mA,VR=6.0V
RL=100Ω,Irr=0.1 IR
2.0
3.0
pF
ns
(2)
Time
trr
—
1. t = 1 SEC
2. trr Test Circuit
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Rev :01.06.2017
www.leiditech.com
LM1MA141WKT1G, S-LM1MA141WKT1G
LM1MA142WKT1G, S-LM1MA142WKT1G
DEVICE MARKING AND ORDERING INFORMATION
Device
Marking
Package
Shipping
LM1MA141WKT1G
S-LM1MA141WKT1G
MT
MT
SOT-323/SC-70
SOT-323/SC-70
3000/Tape&Reel
10000/Tape&Reel
LM1MA141WKT3G
S- LM1MA141WKT3G
LM1MA142WKT1G
MU
MU
SOT-323/SC-70
SOT-323/SC-70
3000/Tape&Reel
10000/Tape&Reel
S-LM1MA142WKT1G
LM1MA142WKT3G
S-LM1MA142WKT3G
2/4
Rev :01.06.2017
www.leiditech.com
LM1MA141WKT1G, S-LM1MA141WKT1G
LM1MA142WKT1G, S-LM1MA142WKT1G
RECOVERY TIME EQUIVALENT TEST CIRCUIT
INPUT PULSE
OUTPUT PULSE
VF, FORWARD VOLTAGE (VOLTS)
VR, REVERSE VOLTAGE (VOLTS)
Figure 2. Reverse Current
Figure 1. Forward Voltage
VR, REVERSE VOLTAGE (VOLTS)
Figure 3. Diode Capacitance
3/4
Rev :01.06.2017
www.leiditech.com
LM1MA141WKT1G, S-LM1MA141WKT1G
LM1MA142WKT1G, S-LM1MA142WKT1G
SC 70
NOTES:
1. DIMENSION
ING AND TOLERANCING PER ANSI
Y14.5M, 1982.
2. CONTROLLING DIMENSION: INCH.
INCHES MILLIMETERS
A
DIM
MIN
MAX
MIN
1.80
1.15
0.80
0.30
MAX
2.20
1.35
1.00
0.40
L
A
B
C
D
0.071 0.087
0.045 0.053
0.032 0.040
0.012 0.016
3
B
S
1
2
G
H
J
K
L
0.047 0.055
0.000 0.004
0.004 0.010
0.017 REF
0.026 BSC
0.028 REF
1.20
0.00
0.10
0.425 REF
0.650 BSC
0.700 REF
1.40
0.10
0.25
D
G
N
S
J
N
C
0.079 0.095
2.00
2.40
0.05 (0.002)
K
H
0.025
0.65
0.025
0.65
0.075
1.9
0.035
0.9
0.028
0.7
inches
mm
Shanghai Leiditech Electronic Co.,Ltd
Email: sale1@leiditech.com
Tel : +86- 021 50828806
Fax : +86- 021 50477059
4/4
Rev :01.06.2017
www.leiditech.com
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