S-LMBT4401DW1T1G [LRC]
DUAL SMALL SIGNAL SURFACE MOUNT TRANSISTOR;
| 型号： | S-LMBT4401DW1T1G |
| 厂家： | 
LESHAN RADIO COMPANY |
| 描述： | DUAL SMALL SIGNAL SURFACE MOUNT TRANSISTOR |
| 文件： | 总6页 (文件大小：408K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
LESHAN RADIO COMPANY, LTD.
DUAL SMALL SIGNAL SURFACE
MOUNT TRANSISTOR
LMBT4401DW1T1G
S-LMBT4401DW1T1G
•
We declare that the material of product compliance with RoHS requirements.
•
S- Prefix for Automotive and Other Applications Requiring Unique Site
and Control Change Requirements; AEC-Q101 Qualified and PPAP Capable.
ORDERING INFORMATION
6
5
4
Device
Marking
Shipping
LMBT4401DW1T1G
2X
2X
3000/Tape&Reel
10000/Tape&Reel
S-LMBT4401DW1T1G
1
2
3
LMBT4401DW1T3G
S-LMBT4401DW1T3G
MAXIMUM RATINGS
SOT-363/SC-88
Rating
Symbol
Value
40
Unit
Vdc
Collector–Emitter Voltage
Collector–Base Voltage
Emitter–Base Voltage
Collector Current — Continuous
V CEO
V CBO
V EBO
I C
6
5
4
60
Vdc
C1
B2
E2
6.0
Vdc
600
mAdc
Q2
Q1
THERMAL CHARACTERISTICS
Characteristic
Symbol
Max
Unit
E1
C2
B1
(1)
Total Package Dissipation
PD
150
mW
T
= 25°C
A
1
2
3
Thermal Resistance Junction to
Ambient
RqJA
833
°C/W
°C
Junction and Storage
Temperature Range
TJ, T
–55 to +150
stg
DEVICE MARKING
LMBT4401DW1T1G = 2X
ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted.)
Characteristic
Symbol
Min
Max
Unit
OFF CHARACTERISTICS
Collector–Emitter Breakdown Voltage (2)
(I C = 1.0 mAdc, I B = 0)
V (BR)CEO
V (BR)CBO
V (BR)EBO
I BEV
Vdc
Vdc
40
60
6.0
—
—
—
Collector–Base Breakdown Voltage
(I C = 0.1 mAdc, I E = 0)
Emitter–Base Breakdown Voltage
(I E = 0.1 mAdc, I C = 0)
Vdc
—
Base Cutoff Current
µAdc
µAdc
(V CE = 35 Vdc, V EB = 0.4 Vdc)
Collector Cutoff Current
0.1
0.1
I CEX
(V CE = 35 Vdc, V EB = 0.4 Vdc)
—
1. Device mounted on FR4 glass epoxy printed circuit board using the minimum
1. recommended footprint.
2. Pulse Test: Pulse Width
<300 µs; Duty Cycle <2.0%.
Rev.O 1/6
LESHAN RADIO COMPANY, LTD.
;S-LMBT4401DW1T1G
LMBT4401DW1T1G
ELECTRICAL CHARACTERISTICS (T A = 25°C unless otherwise noted) (Continued)
Characteristic
Symbol
Min
Max
Unit
ON CHARACTERISTICS ( 2 )
DC Current Gain
hFE
––
(I C = 0.1 mAdc, V CE = 1.0 Vdc)
(I C = 1.0 mAdc, V CE = 1.0 Vdc)
(I C = 10 mAdc, V CE = 1.0 Vdc)
(I C = 150 mAdc, V CE = 1.0 Vdc)
(I C = 500 mAdc, V CE = 2.0 Vdc)
Collector–Emitter Saturation Voltage
(I C = 150 mAdc, I B = 15 mAdc)
(I C = 500 mAdc, I B = 50 mAdc)
Base–Emitter Saturation Voltage
(I C = 150 mAdc, I B = 15 mAdc)
(I C = 500 mAdc, I B = 50 mAdc)
20
40
––
––
80
––
100
40
300
––
VCE(sat)
Vdc
Vdc
––
––
0.4
0.75
V BE(sat)
0.75
––
0.95
1.2
SMALL–SIGNAL CHARACTERISTICS
Current–Gain — Bandwidth Product
(I C = 20 mAdc, V CE= 10Vdc, f = 100 MHz)
Collector–Base Capacitance
f T
C cb
C eb
h ie
MHz
pF
250
––
––
6.5
30
(V CB= 5.0 Vdc, I E = 0, f = 1.0 MHz)
Emitter–Base Capacitance
pF
(V EB = 0.5 Vdc, I C = 0, f = 1.0 MHz)
Input Impedance
––
kΩ
(V CE= 10 Vdc, I C = 1.0 mAdc, f = 1.0 kHz)
Voltage Feedback Ratio
1.0
0.1
40
15
h re
hfe
X 10 –4
—
(V CE= 10 Vdc, I C = 1.0 mAdc, f = 1.0 kHz)
Small–Signal Current Gain
8.0
500
30
(V CE= 10 Vdc, I C = 1.0 mAdc, f = 1.0 kHz)
Output Admittance
h oe
µmhos
(V CE= 10 Vdc, I C = 1.0 mAdc, f = 1.0 kHz)
1.0
SWITCHING CHARACTERISTICS
Delay Time
Rise Time
Storage Time
Fall Time
(V CC = 30 Vdc, V EB = 2.0 Vdc
I C = 150 mAdc, I B1 = 15 mAdc)
(V CC = 30 Vdc, I C = 150 mAdc
t d
t r
—
—
—
—
15
20
ns
ns
t s
t f
225
30
I
B1 = I B2 = 15 mAdc)
2. Pulse Test: Pulse Width
<300 µs; Duty Cycle <2.0%.
SWITCHING TIME EQUIVALENT TEST CIRCUITS
+30 V
+30 V
1.0 to 100µs,
1.0 to 100µs,
200Ω
200 Ω
+ 16 V
0
DUTY CYCLE = 2%
DUTY CYCLE = 2%
+ 16 V
0
1.0 kΩ
1.0 kΩ
C S*< 10 pF
C S* < 10 pF
1N916
– 4.0 V
< 20 ns
– 2.0V
–14 V
<2.0 ns
Scope rise time < 4.0ns
*Total shunt capacitance of test jig connectors, and oscilloscope
Figure 1. Turn–On Time
Figure 2. Turn–Off Time
Rev.O 2/6
LESHAN RADIO COMPANY, LTD.
;S-LMBT4401DW1T1G
LMBT4401DW1T1G
TRANSIENT CHARACTERISTICS
T J = 25°C
T J = 100°C
30
20
10
7.0
5.0
V CC = 30 V
I C / I B = 10
3.0
2.0
C obo
Q
T
10
7.0
1.0
0.7
0.5
5.0
0.3
0.2
Ccb
3.0
2.0
Q A
0.1
0.1
0.2 0.3
0.5
1.0
2.0 3.0 5.0
10
20 30
50
10
20
30
50
70
100
200
300
500
I C , COLLECTOR CURRENT (mA)
REVERSE VOLTAGE (VOLTS)
Figure 4. Charge Data
Figure 3. Capacitance
100
100
70
I C /I B = 10
V CC= 30V
I C/I B =10
70
50
t r
50
t r @V CC=30V
t r @V CC=10V
t d@V EB=2.0V
t d@V EB=0V
t f
30
20
30
20
10
10
7.0
5.0
7.0
5.0
10
20
30
50
70 100
200
300
500
10
20
30
50
70 100
200
300
500
I C , COLLECTOR CURRENT (mA)
I C , COLLECTOR CURRENT (mA)
Figure 5. Turn–On Time
Figure 6. Rise and Fall Time
300
100
t s’= t s – 1/8 t f
I B1 = I B2
I C/I B = 10 to 20
V CC = 30 V
I B1 = I B2
70
50
200
I C /I B = 20
30
20
100
I C /I B = 10
70
50
10
7.0
30
5.0
10
20
30
50
70 100
200
300
500
10
20
30
50
70 100
200
300
500
I C , COLLECTOR CURRENT (mA)
I C , COLLECTOR CURRENT (mA)
Figure 7. Storage Time
Figure 8. Fall Time
Rev.O 3/6
LESHAN RADIO COMPANY, LTD.
;S-LMBT4401DW1T1G
LMBT4401DW1T1G
SMALL–SIGNAL CHARACTERISTICS
NOISE FIGURE
V CE = 10 Vdc, T A = 25°C
Bandwidth = 1.0 Hz
10
8.0
6.0
4.0
2.0
0
10
I C = 1.0 mA, R S = 150 Ω
C = 500 µA, R S = 200 Ω
I C = 100 µA, R S = 2.0 kΩ
C = 50 µA, R S = 4.0 kΩ
f = 1.0 kHz
I
R
S = OPTIMUM
8.0
6.0
4.0
2.0
0
RS = SOURCE
I C = 50 µA
C = 100 µA
I C = 500 µA
I
RS = RESISTANCE
I
I
C = 1.0 mA
0.010.02 0.05 0.1 0.2
0.5 1.0 2.0
5.0 10 20
50 100
500 100 200
500 1.0k 2.0k
5.0k 10k
20k
50k 100k
f , FREQUENCY (kHz)
R S, SOURCE RESISTANCE (kΩ)
Figure 9. Frequency Effects
Figure 10. Source Resistance Effects
h PARAMETERS
(V CE = 10 Vdc, f = 1.0 kHz, T A = 25°C)
This group of graphs illustrates the relationship between h fe and other “h” parameters for this series of
ransistors. To obtain these curves, a high–gain and a low–gain unit were selected from the LMBT4401LT1
lines, and the same units were used to develop the correspondingly numbered curves on each graph.
300
50
LMBT4401LT1 UNIT 1
LMBT4401LT1 UNIT 2
200
20
10
100
5.0
LMBT4401LT1 UNIT 1
LMBT4401LT1 UNIT 2
70
50
2.0
1.0
0.5
30
20
0.1
0.2 0.3
0.5 0.7 1.0
2.0 3.0
7.0 5.0 10
0.1
0.2 0.3
0.5 0.7 1.0
2.0 3.0
7.0 5.0 10
I C , COLLECTOR CURRENT (mA)
I C , COLLECTOR CURRENT (mA)
Figure 12. Input Impedance
Figure 11. Current Gain
10
100
50
7.0
5.0
LMBT4401LT1 UNIT 1
LMBT4401LT1 UNIT 2
LMBT4401LT1 UNIT 1
LMBT4401LT1 UNIT 2
3.0
2.0
20
10
1.0
0.7
0.5
5.0
2.0
1.0
0.3
0.2
0.1
0.2 0.3
0.5 0.7 1.0
2.0 3.0
7.0 5.0 10
0.1
0.2 0.3
0.5 0.7 1.0
2.0 3.0
7.0 5.0 10
I C , COLLECTOR CURRENT (mA)
I C , COLLECTOR CURRENT (mA)
Figure 14. Output Admittance
Figure 13. Voltage Feedback Ratio
Rev.O 4/6
LESHAN RADIO COMPANY, LTD.
;S-LMBT4401DW1T1G
LMBT4401DW1T1G
STATIC CHARACTERISTICS
3.0
2.0
V CE= 1.0 V
V CE=10 V
T J = 125°C
1.0
25°C
0.7
0.5
–55°C
0.3
0.2
0.1
0.2
0.3
0.5
0.7
1.0
2.0
3.0
5.0 7.0
10
20
30
50 70
100
20
300
500
I C , COLLECTOR CURRENT (mA)
Figure 15. DC Current Gain
1.0
0.8
0.6
0.4
0.2
0
T J = 25°C
500mA
10 mA
I C=1.0 mA
100mA
0.01
0.02 0.03
0.05 0.07 0.1
0.2
0.3
0.5
0.7 1.0
2.0 3.0
5.0
7.0
10
20
30
50
I B , BASE CURRENT (mA)
Figure 16. Collector Saturation Region
10
+0.5
T J = 25°C
V BE(sat) @ I C /I B =10
0
– 0.5
–1.0
–1.5
–2.0
– 2.5
θ
VC for V CE(sat)
0.8
0.6
0.4
0.2
0
V BE @ V CE =1.0 V
V CE(sat) @ I C /I B =10
θ VB for V BE
0.1 0.2
0.5 1.0 2.0
5.0
10
20
50
100 200
500
0.1 0.2
0.5 1.0 2.0
5.0
10
20
50
100 200
500
I C , COLLECTOR CURRENT (mA)
I C , COLLECTOR CURRENT (mA)
Figure 18. Temperature Coefficients
Figure 17. “On” Voltages
Rev.O 5/6
LESHAN RADIO COMPANY, LTD.
;S-LMBT4401DW1T1G
LMBT4401DW1T1G
SC-88/SOT-363
NOTES:
1. DIMENSIONING AND TOLERANCING PER ANSI
Y14.5M, 1982.
A
G
2. CONTROLLING DIMENSION: INCH.
INCHES
MAX
MILLIMETERS
DIM
MIN
MIN
1.80
1.15
0.80
0.10
MAX
2.20
6
5
4
A
B
C
D
G
H
J
0.071
0.045
0.031
0.004
0.087
0.053
0.043
0.012
1.35
-B-
S
1.10
1
2
3
0.30
0.026 BSC
0.65 BSC
0.10
---
0.004
0.010
0.012
---
M
M
0.2 (0.008)
N
B
D6PL
0.004
0.004
0.10
0.10
0.25
K
N
S
0.30
0.008 REF
0.20 REF
2.20
0.079
0.087
2.00
J
C
PIN 1. EMITTER 2
2. BASE 2
K
H
3. COLLECTOR 1
4.EMITTER 1
5. BASE 1
6.COLLECTOR 2
0.5 mm (min)
1.9 mm
Rev.O 6/6
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