MMDL707 [LGE]
Schottky Barrier Diode; 肖特基二极管
| 型号： | MMDL707 |
| 厂家： | 
LGE |
| 描述： | Schottky Barrier Diode |
| 文件： | 总2页 (文件大小：241K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
MMDL707
Schottky Barrier Diode
SOD-323
Features
Low reverse leakage—IR=200nA(Max.).
Very Low Capacitance—1.0pF @20V.
Extremely Low minority carrier lifetime.
High reverse leakage—70V(min.)
Dimensions in inches and (millimeters)
Applications
For high-efficiency UHF and VHF detector applications.
Ordering Information
Type No.
Marking
5H
Package Code
SOD-323
MMDL770
MAXIMUM RATING @ Ta=25℃ unless otherwise specified
Parameter
Symbol
Limits
Unit
V
DC reverse voltage
VR
70
Power Dissipation
Pd
200
mW
℃/W
℃
Thermal resistance,junction to ambient air
Junction temperature
RθjA
635
Tj
150
Storage temperature range
Tstg
-55-150
℃
ELECTRICAL CHARACTERISTICS @ Ta=25℃ unless otherwise specified
Parameter
Symbol
Conditions
Min.
Typ.
Max.
Unit
Reverse Breakdown Voltage
V(BR)R
IR=10μA
70
V
Forward voltage
VF
IF=10mA
0.7
1.0
V
Reverse leakage current
Total capacitance
IR
VR=35V
9.0
0.5
200
1.0
nA
pF
CT
VR=20V,f=1.0MHz
http://www.luguang.cn
mail:lge@luguang.cn
MMDL707
Schottky Barrier Diode
TYPICAL CHARACTERISTICS @ Ta=25℃ unless otherwise specified
http://www.luguang.cn
mail:lge@luguang.cn
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