LBD2014-XX [LIGITEK]

LIGHT BAR LED DISPLAY; 灯条LED显示屏
LBD2014-XX
型号: LBD2014-XX
厂家: LIGITEK ELECTRONICS CO., LTD.    LIGITEK ELECTRONICS CO., LTD.
描述:

LIGHT BAR LED DISPLAY
灯条LED显示屏

文件: 总7页 (文件大小:109K)
中文:  中文翻译
下载:  下载PDF数据表文档文件
LIGITEK ELECTRONICS CO.,LTD.  
Property of Ligitek Only  
LIGHT BAR LED DISPLAY  
LBD2014-XX  
DATA SHEET  
DOC. NO : QW0905-LBD2014-XX  
REV.  
: A  
DATE  
: 15 - Feb.- 2006  
LIGITEK ELECTRONICS CO.,LTD.  
Property of Ligitek Only  
PART NO. LBD2014-XX  
Page 1/6  
Package Dimensions  
LBD2014-XX  
6.35(0.25")  
8.0(0.315")  
LIGITEK  
PIN NO.1  
13.97  
(0.55")  
12.7  
(0.5")  
2.54X2=5.08  
(0.2")  
7.49(0.295")  
4.3±0.5  
Ø0.45  
TYP  
5.08(0.2")  
Note : 1.All dimension are in millimeters and (lnch) tolerance is ±0.25mm unless otherwise noted.  
2.Specifications are subject to change without notice.  
LIGITEK ELECTRONICS CO.,LTD.  
Property of Ligitek Only  
PART NO. LBD2014-XX  
Page 2/6  
Internal Circuit Diagram  
LBD2014-XX  
6 3  
1 4  
Electrical Connection  
PIN NO.1  
LBD2014-XX  
1
Cathode  
NP  
2
3
Anode  
Cathode  
NC  
4
5
Anode  
6
LIGITEK ELECTRONICS CO.,LTD.  
Property of Ligitek Only  
Page 3/6  
PART NO. LBD2014-XX  
Absolute Maximum Ratings at Ta=25  
Ratings  
Symbol  
Parameter  
UNIT  
E
Forward Current Per Chip  
IF  
30  
mA  
mA  
Peak Forward Current Per  
Chip (Duty 1/10,0.1ms  
Pulse Width)  
IFP  
120  
Power Dissipation Per Chip  
mW  
PD  
100  
10  
μA  
Reverse Current Per Any Chip  
Operating Temperature  
Ir  
Topr  
Tstg  
-25 ~ +85  
-25 ~ +85  
Storage Temperature  
Solder Temperature 1/16 Inch Below Seating Plane For 3 Seconds At 260 ℃  
Part Selection And Application Information(Ratings at 25)  
Electrical  
common  
cathode  
or anode  
CHIP  
Material  
λP △λ  
Vf(v)  
Typ.  
Iv(mcd)  
Typ.  
Max. Min.  
IV-M  
2:1  
PART NO  
(nm)  
(nm)  
Emitted  
Orange  
Min.  
1.7  
Common  
Cathode  
LBD2014-XX  
GaAsP/GaP  
635  
45  
2.1 2.6 3.05 5.0  
Note : 1.The forward voltage data did not including ±0.1V testing tolerance.  
2. The luminous intensity data did not including ±15% testing tolerance.  
LIGITEK ELECTRONICS CO.,LTD.  
Property of Ligitek Only  
Page 4/6  
PART NO. LBD2014-XX  
Test Condition For Each Parameter  
Symbol  
Unit  
volt  
Test Condition  
Parameter  
Forward Voltage Per Chip  
Vf  
If=20mA  
If=10mA  
If=20mA  
If=20mA  
Vr=5V  
Luminous Intensity Per Chip  
Peak Wavelength  
Iv  
mcd  
nm  
λP  
△λ  
Ir  
Spectral Line Half-Width  
Reverse Current Any Chip  
Luminous Intensity Matching Ratio  
nm  
μA  
IV-M  
LIGITEK ELECTRONICS CO.,LTD.  
Property of Ligitek Only  
Page  
PART NO. LBD2014-XX  
5/6  
Typical Electro-Optical Characteristics Curve  
E CHIP  
Fig.1 Forward current vs. Forward Voltage  
Fig.2 Relative Intensity vs. Forward Current  
3.0  
2.5  
2.0  
1000  
100  
10  
1.5  
1.0  
1.0  
0.1  
0.5  
0.0  
1.0  
2.0  
3.0  
4.0  
5.0  
1.0  
10  
100  
1000  
Forward Current(mA)  
Forward Voltage(V)  
Fig.3 Forward Voltage vs. Temperature  
Fig.4 Relative Intensity vs. Temperature  
1.2  
1.1  
1.0  
0.9  
0.8  
3.0  
2.5  
2.0  
1.5  
1.0  
0.5  
0.0  
-40  
-20  
0
20  
40  
60  
80  
100  
-40  
-20  
0
20  
40  
60  
80  
100  
Ambient Temperature()  
Ambient Temperature()  
Fig.5 Relative Intensity vs. Wavelength  
1.0  
0.5  
0.0  
550  
600  
650  
700  
750  
Wavelength (nm)  
LIGITEK ELECTRONICS CO.,LTD.  
Property of Ligitek Only  
Page 6/6  
PART NO. LBD2014-XX  
Reliability Test:  
Reference  
Standard  
Description  
Test Item  
Test Condition  
1.Under Room Temperature  
2.If=10mA  
3.t=1000 hrs (-24hrs, +72hrs)  
MIL-STD-750: 1026  
MIL-STD-883: 1005  
JIS C 7021: B-1  
This test is conducted for the purpose  
of detemining the resistance of a part  
in electrical and themal stressed.  
Operating Life Test  
The purpose of this is the resistance of  
the device which is laid under condition  
of high temperature for hours.  
High Temperature  
Storage Test  
1.Ta=105 ℃±5℃  
2.t=1000 hrs (-24hrs, +72hrs)  
MIL-STD-883:1008  
JIS C 7021: B-10  
The purpose of this is the resistance  
of the device which is laid under  
condition of low temperature for hours.  
Low Temperature  
Storage Test  
1.Ta=-40 ℃±5℃  
2.t=1000 hrs (-24hrs, +72hrs)  
JIS C 7021: B-12  
1.Ta=65℃±5℃  
2.RH=90%~95%  
3.t=240hrs ±2hrs  
High Temperature  
High Humidity Test  
The purpose of this test is the resistance  
of the device under tropical for hours.  
MIL-STD-202:103B  
JIS C 7021: B-11  
The purpose of this is the resistance of  
the device to sudden extreme changes  
in high and low temperature.  
1.Ta=105 ℃±5&-40℃±5℃  
(10min) (10min)  
2.total 10 cycles  
MIL-STD-202: 107D  
MIL-STD-750: 1051  
MIL-STD-883: 1011  
Thermal Shock Test  
This test intended to determine the  
thermal characteristic resistance  
of the device to sudden exposures  
at extreme changes in temperature  
when soldering the lead wire.  
MIL-STD-202: 210A  
MIL-STD-750: 2031  
JIS C 7021: A-1  
Solder Resistance  
Test  
1.T.Sol=260 ℃±5℃  
2.Dwell time= 10 ±1sec.  
MIL-STD-202: 208D  
MIL-STD-750: 2026  
MIL-STD-883: 2003  
JIS C 7021: A-2  
This test intended to see soldering well  
performed or not.  
1.T.Sol=230 ℃±5℃  
2.Dwell time=5 ±1sec  
Solderability Test  

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