LFD4K5-69-XX-F4-PF [LIGITEK]

FOUR DIGIT LED DISPLAY (0.39 Inch); 四位LED显示( 0.39英寸)
LFD4K5-69-XX-F4-PF
型号: LFD4K5-69-XX-F4-PF
厂家: LIGITEK ELECTRONICS CO., LTD.    LIGITEK ELECTRONICS CO., LTD.
描述:

FOUR DIGIT LED DISPLAY (0.39 Inch)
四位LED显示( 0.39英寸)

文件: 总9页 (文件大小:153K)
中文:  中文翻译
下载:  下载PDF数据表文档文件
LIGITEK ELECTRONICS CO.,LTD.  
Property of Ligitek Only  
FOUR DIGIT LED DISPLAY (0.39 Inch)  
Pb  
Lead-Free Parts  
LFD4K5/69-XX/F4-PF  
DATA SHEET  
DOC. NO : QW0905-LFD4K5/69-XX/F4-PF  
REV.  
: B  
DATE  
: 31 - Jul. - 2006  
LIGITEK ELECTRONICS CO.,LTD.  
Property of Ligitek Only  
Page 1/8  
PART NO. LFD4K5/69-XX/F4-PF  
Package Dimensions  
LFD4K5/69-XX/F4-PF  
CUSTOMER P/N  
LAPLING  
BIN GRADING  
ORDER DATE  
7.0(0.276")  
40.18(1.582")  
L1  
DIG.1  
DIG.2  
DIG.3  
DIG.4  
L3  
10.0  
(0.39")  
12.8  
(0.504")  
4.5±0.3  
L2  
1.2  
90°±5°  
17.5MIN  
Ø0.51TYP  
2.54*13=33.02  
A
F
B
G
E
C
DP  
D
PIN NO.1  
Note : 1.All dimension are in millimeters and (lnch) tolerance is ±0.25mm unless otherwise noted.  
2.Specifications are subject to change without notice.  
LIGITEK ELECTRONICS CO.,LTD.  
Property of Ligitek Only  
2/8  
Page  
PART NO. LFD4K5/69-XX/F4-PF  
Internal Circuit Diagram  
LFD4K59-XX/F4-PF  
LFD4K69-XX/F4-PF  
14  
13  
12  
11  
10  
9
8
7
14  
13  
A
B
C
D
E
F
G
DP  
DIG.1  
A
B
C
D
E
F
G
DP  
DIG.1  
12  
11  
10  
9
8
7
5
5
A
B
DIG.2  
A
B
DIG.2  
C
C
D
E
D
E
4
4
F
F
G
DP  
G
DP  
A
B
DIG.3  
A
B
DIG.3  
C
C
D
E
D
E
2
2
F
F
G
DP  
G
DP  
A
B
DIG.4  
A
B
DIG.4  
C
C
D
E
D
E
1
1
F
F
G
DP  
G
DP  
L1  
L2  
L3  
L1  
L2  
L3  
3
3
LIGITEK ELECTRONICS CO.,LTD.  
Property of Ligitek Only  
Page 3/8  
PART NO. LFD4K5/69-XX/F4-PF  
Electrical Connection  
PIN NO.1  
1
LFD4K59-XX/F4-PF  
PIN NO.1  
1
LFD4K69-XX/F4-PF  
Common Anode Dig.4  
Common Cathode Dig.4  
Common Anode Dig.3  
Anode L1,L2,L3  
Common Cathode Dig.3  
Cathode L1,L2,L3  
2
3
2
3
Common Cathode Dig.2  
Common Anode Dig.2  
Common Anode Dig.1  
4
4
Common Cathode Dig.1  
NO CONNECT  
Anode DP  
5
5
NO CONNECT  
Cathode DP  
Cathode G  
6
6
7
7
Anode G  
8
8
Anode F  
Cathode F  
9
9
Anode E  
Cathode E  
10  
11  
12  
13  
10  
11  
12  
13  
Anode D  
Cathode D  
Anode C,L3  
Anode B,L2  
Anode A,L1  
Cathode C,L3  
Cathode B,L2  
Cathode A,L1  
14  
14  
LIGITEK ELECTRONICS CO.,LTD.  
Property of Ligitek Only  
PART NO. LFD4K5/69-XX/F4-PF  
Page 4/8  
Absolute Maximum Ratings at Ta=25  
Ratings  
9SEF  
30  
Symbol  
Parameter  
UNIT  
Forward Current Per Chip  
IF  
mA  
mA  
Peak Forward Current Per  
Chip (Duty 1/10,0.1ms  
Pulse Width)  
60  
IFP  
Power Dissipation Per Chip  
mW  
PD  
Ir  
75  
10  
μA  
Reverse Current Per Any Chip  
Electrostatic Discharge( * )  
Operating Temperature  
Storage Temperature  
ESD  
Topr  
Tstg  
μA  
2000  
-25 ~ +85  
-25 ~ +85  
Static Electricity or power surge will damage the LED. Use of a conductive wrist band or anti-electrosatic  
*
glove is recommended when handing these LED. All devices, equipment and machinery must be properly  
grounded.  
Part Selection And Application Information(Ratings at 25)  
Electrical  
common  
cathode  
or anode  
CHIP  
λD △λ  
Vf(v)  
Typ.  
Iv(mcd)  
Typ.  
Max. Min.  
IV-M  
2:1  
PART NO  
(nm)  
(nm)  
Material Emitted  
Min.  
1.7  
Common  
Cathode  
LFD4K59-XX/F4-PF  
LFD4K69-XX/F4-PF  
Orange  
AlGaInP  
605  
17  
2.1 2.6 15.25 26.0  
Common  
Anode  
Note : 1.The forward voltage data did not including ±0.1V testing tolerance.  
2. The luminous intensity data did not including ±15% testing tolerance.  
LIGITEK ELECTRONICS CO.,LTD.  
Property of Ligitek Only  
PART NO. LFD4K5/69-XX/F4-PF  
5/8  
Page  
Test Condition For Each Parameter  
Symbol  
Unit  
volt  
Test Condition  
If=20mA  
If=10mA  
If=20mA  
If=20mA  
Vr=5V  
Parameter  
Forward Voltage Per Chip  
Vf  
Iv  
Luminous Intensity Per Chip  
Dominant Wavelength  
mcd  
nm  
λD  
△λ  
Ir  
Spectral Line Half-Width  
nm  
Reverse Current Any Chip  
Luminous Intensity Matching Ratio  
μA  
IV-M  
LIGITEK ELECTRONICS CO.,LTD.  
Property of Ligitek Only  
Page6/8  
PART NO. LFD4K5/69-XX/F4-PF  
Typical Electro-Optical Characteristics Curve  
9SEF CHIP  
Fig.1 Forward current vs. Forward Voltage  
Fig.2 Relative Intensity vs. Forward Current  
1000  
100  
3.0  
2.5  
2.0  
10  
1.5  
1.0  
1.0  
0.5  
0.0  
0.1  
1.0  
2.0  
3.0  
4.0  
5.0  
1.0  
10  
100  
1000  
Forward Current(mA)  
Forward Voltage(V)  
Fig.3 Forward Voltage vs. Temperature  
Fig.4 Relative Intensity vs. Temperature  
3.0  
2.5  
2.0  
1.5  
1.0  
1.2  
1.1  
1.0  
0.9  
0.8  
0.5  
0.0  
-40  
-20  
0
20  
40  
60  
80  
100  
-40  
-20  
0
20  
40  
60  
80  
100  
Ambient Temperature()  
Ambient Temperature()  
Fig.5 Relative Intensity vs. Wavelength  
1.0  
0.5  
0.0  
550  
600  
500  
650  
Wavelength (nm)  
LIGITEK ELECTRONICS CO.,LTD.  
Property of Ligitek Only  
PART NO. LFD4K5/69-XX/F4-PF  
Page 7/8  
Soldering Condition(Pb-Free)  
1.Iron:  
Soldering Iron:30W Max  
Temperature 350°C Max  
Soldering Time:3 Seconds Max(One Time)  
Distance:Solder Temperature 1/16 Inch Below Seating  
Plane For 3 Seconds At 260°C  
2.Wave Soldering Profile  
Dip Soldering  
Preheat: 120°C Max  
Preheat time: 60seconds Max  
Ramp-up  
2°C/sec(max)  
Ramp-Down:-5°C/sec(max)  
Solder Bath:260°C Max  
Dipping Time:3 seconds Max  
Distance:Solder Temperature 1/16 Inch Below Seating  
Plane For 3 Seconds At 260°C  
Temp(°C)  
260°C3sec Max  
260°  
5°/sec  
max  
120°  
2°/sec  
25°  
0°  
max  
0
50  
150  
Time(sec)  
100  
Preheat  
60 Seconds Max  
LIGITEK ELECTRONICS CO.,LTD.  
Property of Ligitek Only  
PART NO. LFD4K5/69-XX/F4-PF  
8/8  
Page  
Reliability Test:  
Reference  
Description  
Test Item  
Test Condition  
Standard  
1.Under Room Temperature  
2.If=10mA  
3.t=1000 hrs (-24hrs, +72hrs)  
This test is conducted for the purpose  
of detemining the resistance of a part  
in electrical and themal stressed.  
MIL-STD-750: 1026  
MIL-STD-883: 1005  
JIS C 7021: B-1  
Operating Life Test  
The purpose of this is the resistance of  
the device which is laid under condition  
of high temperature for hours.  
High Temperature  
Storage Test  
1.Ta=105 ℃±5℃  
2.t=1000 hrs (-24hrs, +72hrs)  
MIL-STD-883:1008  
JIS C 7021: B-10  
The purpose of this is the resistance  
of the device which is laid under  
condition of low temperature for hours.  
Low Temperature  
Storage Test  
1.Ta=-40 ℃±5℃  
2.t=1000 hrs (-24hrs, +72hrs)  
JIS C 7021: B-12  
1.Ta=65℃±5℃  
2.RH=90%~95%  
3.t=240hrs ±2hrs  
High Temperature  
High Humidity Test  
The purpose of this test is the resistance  
of the device under tropical for hours.  
MIL-STD-202:103B  
JIS C 7021: B-11  
The purpose of this is the resistance of  
the device to sudden extreme changes  
in high and low temperature.  
1.Ta=105 ℃±5&-40℃±5℃  
(10min) (10min)  
2.total 10 cycles  
MIL-STD-202: 107D  
MIL-STD-750: 1051  
MIL-STD-883: 1011  
Thermal Shock Test  
This test intended to determine the  
thermal characteristic resistance  
of the device to sudden exposures  
at extreme changes in temperature  
when soldering the lead wire.  
MIL-STD-202: 210A  
MIL-STD-750: 2031  
JIS C 7021: A-1  
Solder Resistance  
Test  
1.T.Sol=260 ℃±5℃  
2.Dwell time= 10 ±1sec.  
MIL-STD-202: 208D  
MIL-STD-750: 2026  
MIL-STD-883: 2003  
JIS C 7021: A-2  
This test intended to see soldering well  
performed or not.  
1.T.Sol=230 ℃±5℃  
2.Dwell time=5 ±1sec  
Solderability Test  

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