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0
MURATA
0
INFINEON
SWT7-Z3BZ
Model SWT7 Tactile Switches, 6.2 X 6.3 mm Low Profile, SMD RoHS Compliant
1
TTELEC
0
MSYSTEM
0
MSYSTEM
0
MSYSTEM
0
MSYSTEM
0
MURATA
0
WALSIN
TP5531-SR
1.8V, 34μA, RRIO, Zero Drift Op-amps
0
3PEAK
SWT7-J1GTR
Model SWT7 Tactile Switches, 6.2 X 6.3 mm Low Profile, SMD RoHS Compliant
0
TTELEC
0
LEIDITECH
1
MSYSTEM
SUO75L2C48
Ceramic SMD Ultra Low Jitter 6 Pad LVDS Oscillator
0
SUNTSU
1
MSYSTEM
1
MSYSTEM
0
MSYSTEM
2
NXP
R3-NMW1F-N
Remote I/O R3 Series MODBUS INTERFACE MODULE
0
MSYSTEM
1
LEIDITECH
IPP330P10NM
TO-220 封装型 100 V OptiMOS™ P 沟道 MOSFET 是面向电池管理、负载开关和反极性保护应用的全新技术。P 沟道器件的主要优势在于降低中低功率应用的设计复杂度。此类产品可轻松连接 MCU，开关速度快且雪崩能力强，尤其适合质量要求高的应用。器件支持正常电平，具备较宽的 RDS(on) 范围和低 Qg，低负载下效率较高。
0
INFINEON
1
ONSEMI
KBS-4C-D
Plug-in Signal Conditioners K-UNIT
0
MSYSTEM
0
LEIDITECH
SVB-45-P
Plug-in Signal Conditioners M-UNIT
0
MSYSTEM
0
TE
CMT1-6-R
Common mode inductors, through-hole
1
EATON
1
MSYSTEM
0
MSYSTEM
0
WALSIN
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KYOCERA AVX
AMPHENOL
SAMTEC
WALSIN
VISHAY
MSYSTEM
GLENAIR
ITT
MICROSEMI
YAGEO
ECLIPTEK
ABRACON
MOLEX
VICOR
KEMET
MTRONPTI
TI
PANASONIC
CTS
SCHURTER
KNOWLES
MURATA
TE
TOREX
SILICON
BOURNS
GOLLEDGE
STMICROELECTRONICS
RCD
BEL
NXP
MICROCHIP
TDK
KOA
INFINEON
FOXCONN
EUROQUARTZ
MAXIM
LITTELFUSE
VCC
RENESAS
CDE
IDT
AVAGO
HONEYWELL
ONSEMI
FH
NICHICON
APITECH
ROHM
EPCOS
AGILENT
GRAYHILL
ADI
Carling Technologies
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