IXBF12N300 [LITTELFUSE]
Insulated Gate Bipolar Transistor, 22A I(C), 3000V V(BR)CES, N-Channel, I4PAK-3;
| 型号： | IXBF12N300 |
| 厂家： | 
LITTELFUSE |
| 描述： | Insulated Gate Bipolar Transistor, 22A I(C), 3000V V(BR)CES, N-Channel, I4PAK-3 栅 瞄准线 功率控制 晶体管 |
| 文件： | 总6页 (文件大小：251K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
High Voltage, High Gain
BIMOSFETTM Monolithic
Bipolar MOS Transistor
VCES = 3000V
IC110 = 11A
VCE(sat) ≤ 3.2V
IXBF12N300
(Electrically Isolated Tab)
ISOPLUS i4-PakTM
Symbol
VCES
Test Conditions
Maximum Ratings
TC = 25°C to 150°C
3000
3000
V
V
VCGR
TJ = 25°C to 150°C, RGE = 1MΩ
1
2
VGES
VGEM
Continuous
Transient
± 20
± 30
V
V
Isolated Tab
5
IC25
IC110
ICM
TC = 25°C
26
11
98
A
A
A
1 = Gate
2 = Emitter
5 = Collector
TC = 110°C
TC = 25°C, 1ms
SSOA
(RBSOA)
VGE = 15V, TVJ = 125°C, RG = 20Ω
Clamped Inductive Load
ICM = 98
1500
A
V
PC
TC = 25°C
125
W
TJ
-55 ... +150
150
°C
°C
°C
Features
TJM
Tstg
z
-55 ... +150
Silicon Chip on Direct-Copper Bond
(DCB) Substrate
Isolated Mounting Surface
TL
TSOLD
1.6mm (0.062 in.) from Case for 10s
Plastic Body for 10 seconds
300
260
°C
°C
z
z
4000V~ Electrical Isolation
z
FC
Mounting Force
20..120 / 4.5..27
Nm/lb.in.
High Blocking Voltage
z
z
High Peak Current Capability
Low Saturation Voltage
VISOL
Weight
50/60Hz, 1 Minute
4000
5
V~
g
Advantages
z
Low Gate Drive Requirement
High Power Density
z
Symbol Test Conditions
Characteristic Values
(TJ = 25°C Unless Otherwise Specified)
Min.
3000
3.0
Typ.
Max.
Applications
BVCES
VGE(th)
ICES
IC = 250μA, VGE = 0V
IC = 250μA, VCE = VGE
VCE = 0.8 • VCES, VGE = 0V
V
5.0
25 μA
mA
±100 nA
V
z
Switch-Mode and Resonant-Mode
Power Supplies
Capacitor Discharge Circuits
Uninterrupted Power Supplies(UPS)
Laser Drivers
z
Note 2, TJ = 125°C
1
z
IGES
VCE = 0V, VGE = ± 20V
z
z
VCE(sat)
IC = 12A, VGE = 15V, Note 1
2.8
3.5
3.2
V
V
AC Switches
TJ = 125°C
DS100121C(10/12)
© 2012 IXYS CORPORATION, All Rights Reserved
IXBF12N300
Symbol Test Conditions
(TJ = 25°C Unless Otherwise Specified)
Characteristic Values
ISOPLUS i4-PakTM (HV) Outline
Min.
Typ.
Max.
gfS
IC = 12A, VCE = 10V, Note 1
VCE = 25V, VGE = 0V, f = 1MHz
6.5
10.8
S
Cies
Coes
Cres
1290
56
pF
pF
pF
19
Qg
62
13
nC
nC
nC
Qge
Qgc
IC = 12A, VGE = 15V, VCE = 1000V
8.5
td(on)
tr
td(off)
tf
td(on)
tr
td(off)
tf
64
140
180
540
ns
ns
ns
ns
Resistive Switching Times, TJ = 25°C
Pin 1 = Gate
IC = 12A, VGE = 15V
Pin2 = Emitter
Pin 3 = Collector
Tab 4 = Isolated
VCE = 1250V, RG = 10Ω
65
395
175
530
ns
ns
ns
ns
Resistive Switching Times, TJ = 125°C
IC = 12A, VGE = 15V
VCE = 1250V, RG = 10Ω
RthJC
RthCS
1.00 °C/W
°C/W
0.15
Reverse Diode
Symbol Test Conditions
Characteristic Values
(TJ = 25°C Unless Otherwise Specified)
Min.
Typ.
Max.
VF
trr
IF = 12A, VGE = 0V
2.1
V
μs
A
1.4
21
IF = 6A, VGE = 0V, -diF/dt = 100A/μs
VR = 100V, VGE = 0V
IRM
Notes:
1. Pulse test, t ≤ 300μs, duty cycle, d ≤ 2%.
2. Device must be heatsunk for high temperature leakage current
measurements to avoid thermal runaway.
IXYS Reserves the Right to Change Limits, Test Conditions and Dimensions.
IXYS MOSFETs and IGBTs are covered
by one or more of the following U.S. patents: 4,860,072 5,017,508
4,881,106 5,034,796
4,835,592 4,931,844
5,049,961
5,063,307
5,187,117
5,237,481
5,381,025
5,486,715
6,162,665
6,259,123 B1
6,306,728 B1
6,404,065 B1 6,683,344
6,534,343
6,583,505
6,727,585
6,710,405 B2 6,759,692
6,710,463
7,005,734 B2 7,157,338B2
7,063,975 B2
6,771,478 B2 7,071,537
IXBF12N300
Fig. 1. Output Characteristics @ TJ = 25ºC
Fig. 2. Extended Output Characteristics @ TJ = 25ºC
240
200
160
120
80
24
20
16
12
8
VGE = 25V
VGE = 25V
20V
15V
20V
10V
15V
10V
5V
4
40
5V
0
0
0
0.5
1
1.5
2
2.5
3
3.5
4
0
5
10
15
20
25
30
VCE - Volts
VCE - Volts
Fig. 4. Dependence of VCE(sat) on
Junction Temperature
Fig. 3. Output Characteristics @ TJ = 125ºC
24
20
16
12
8
1.8
1.6
1.4
1.2
1.0
0.8
0.6
VGE = 25V
20V
VGE = 15V
I C = 24A
15V
I C = 12A
10V
I C = 6A
4
5V
0
0
0.5
1
1.5
2
2.5
3
3.5
4
4.5
-50
-25
0
25
50
75
100
125
150
VCE - Volts
TJ - Degrees Centigrade
Fig. 5. Collector-to-Emitter Voltage vs.
Gate-to-Emitter Voltage
Fig. 6. Input Admittance
40
36
32
28
24
20
16
12
8
6.0
5.5
5.0
4.5
4.0
3.5
3.0
2.5
2.0
TJ = 25ºC
I C = 24A
TJ = 125ºC
25ºC
- 40ºC
12A
4
6A
13
0
3.5
4.0
4.5
5.0
5.5
6.0
6.5
7.0
7.5
8.0
8.5
9.0
5
7
9
11
15
17
19
21
23
25
VGE - Volts
VGE - Volts
© 2012 IXYS CORPORATION, All Rights Reserved
IXBF12N300
Fig. 8. Forward Voltage Drop of Intrinsic Diode
Fig. 7. Transconductance
18
16
14
12
10
8
36
32
28
24
20
16
12
8
TJ = - 40ºC
25ºC
125ºC
TJ = 25ºC
TJ = 125ºC
6
4
2
4
0
0
0
5
10
15
20
25
30
35
40
45
0
0.5
1
1.5
2
2.5
3
VF - Volts
IC - Amperes
Fig. 9. Gate Charge
Fig. 10. Capacitance
16
14
12
10
8
10,000
1,000
100
f = 1 MHz
VCE = 1kV
I C = 12A
I
G = 10mA
C
ies
6
C
oes
4
2
C
res
0
10
0
10
20
30
40
50
60
0
5
10
15
20
25
30
35
40
VCE - Volts
QG - NanoCoulombs
Fig. 12. Maximum Transient Thermal Impedance
Fig. 11. Reverse-Bias Safe Operating Area
aaa
2
1
100
80
60
40
20
0
D = 0.50
D = 0.20
D = tp / T
D = 0.10
D = 0.05
0.1
t
p
T
TJ = 125ºC
G = 20Ω
dv / dt < 10V / ns
D = 0.02
D = 0.01
R
Single Pulse
0.01
250
500
750 1000 1250 1500 1750 2000 2250 2500 2750 3000
VCE - Volts
0.000001 0.00001
0.0001
0.001
0.01
0.1
1
10
Pulse Width - Seconds
IXYS Reserves the Right to Change Limits, Test Conditions and Dimensions.
IXBF12N300
Fig. 14. Resistive Turn-on Rise Time vs.
Collector Current
Fig. 13. Resistive Turn-on Rise Time vs.
Junction Temperature
600
500
400
300
200
100
0
600
500
400
300
200
100
0
RG = 10Ω , VGE = 15V
VCE = 1250V
RG = 10Ω , VGE = 15V
VCE = 1250V
TJ = 125ºC
I C = 24A
I C = 12A
TJ = 25ºC
25
35
45
55
65
75
85
95
105
115
125
6
8
10
12
14
16
18
20
22
24
TJ - Degrees Centigrade
IC - Amperes
Fig. 16. Resistive Turn-off Switching Times vs.
Junction Temperature
Fig. 15. Resistive Turn-on Switching Times vs.
Gate Resistance
800
700
600
500
400
300
200
200
190
180
170
160
150
140
750
700
650
600
550
500
450
400
350
300
250
150
t f
t
d(off) - - - -
t r
t
d(on) - - - -
140
130
120
110
100
90
RG = 10Ω, VGE = 15V
TJ = 125ºC, VGE = 15V
VCE = 1250V
VCE = 1250V
I C = 12A
I C = 24A, 12A
80
70
I C = 24A
60
50
10
20
30
40
50
60
70
80
90
100
25
35
45
55
65
75
85
95
105
115
125
RG - Ohms
TJ - Degrees Centigrade
Fig. 18. Resistive Turn-off Switching Times vs.
Gate Resistance
Fig. 17. Resistive Turn-off Switching Times vs.
Collector Current
700
650
600
550
500
450
400
350
300
250
900
1400
1200
1000
800
600
400
200
0
340
t f
t
t f
td(off
) - - - -
d(off) - - - -
800
700
600
500
400
300
200
100
0
300
260
220
180
140
100
60
RG = 10Ω, VGE = 15V
TJ = 125ºC, VGE = 15V
VCE = 1250V
VCE = 1250V
I C = 12A
I C = 24A
TJ = 125ºC, 25ºC
6
8
10
12
14
16
18
20
22
24
10
20
30
40
50
60
70
80
90
100
RG - Ohms
IC - Amperes
© 2012 IXYS CORPORATION, All Rights Reserved
IXYS REF: B_12N300(4P)6-07-12-B
Disclaimer Notice - Information furnished is believed to be accurate and reliable. However, users should independently
evaluate the suitability of and test each product selected for their own applications. Littelfuse products are not designed for,
and may not be used in, all applications. Read complete Disclaimer Notice at www.littelfuse.com/disclaimer-electronics.
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