IXBH28N170A [LITTELFUSE]
Insulated Gate Bipolar Transistor, 30A I(C), 1700V V(BR)CES, N-Channel, TO-247AD, PLASTIC PACKAGE-3;型号: | IXBH28N170A |
厂家: | LITTELFUSE |
描述: | Insulated Gate Bipolar Transistor, 30A I(C), 1700V V(BR)CES, N-Channel, TO-247AD, PLASTIC PACKAGE-3 局域网 栅 功率控制 晶体管 |
文件: | 总2页 (文件大小:69K) |
中文: | 中文翻译 | 下载: | 下载PDF数据表文档文件 |
ADVANCE TECHNICAL INFORMATION
VCES = 1700 V
HighVoltage,HighGain
IXBH 28N170A
IXBT 28N170A
BIMOSFETTM Monolithic
Bipolar MOS Transistor
IC25
VCE(sat)
tfi
=
=
30 A
6.0 V
= 50 ns
Symbol
TestConditions
Maximum Ratings
TO-268(IXBT)
VCES
VCGR
TJ = 25°C to 150°C
1700
1700
V
V
TJ = 25°C to 150°C; RGE = 1 MΩ
G
VGES
VGEM
Continuous
Transient
20
30
V
V
E
(TAB)
IC25
IC90
ICM
TC = 25°C
30
14
60
A
A
A
TO-247AD(IXBH)
TC = 90°C
TC = 25°C, 1 ms
SSOA
(RBSOA)
VGE = 15 V, TVJ = 125°C, RG = 10 Ω
ICM
VCES
=
=
60
1350
A
V
TAB)
Clamped inductive load
G
C
E
PC
TC = 25°C
300
W
TJ
-55 ... +150
150
°C
G = Gate,
E=Emitter,
C = Collector,
TAB = Collector
TJM
Tstg
°C
°C
-55 ... +150
Features
Maximum Lead temperature for soldering
1.6 mm (0.062 in.) from case for 10 s
Maximum Tab temperature for soldering SMD devices for 10 s
300
°C
°C
z High Blocking Voltage
z JEDEC TO-268 surface and
JEDEC TO-247 AD
260
z Low conduction losses
Md
Mounting torque (M3) (TO-247)
1.13/10Nm/lb.in.
z High current handling capability
z MOS Gate turn-on
- drive simplicity
z Molding epoxies meet UL 94 V-0
flammability classification
Weight
TO-247 AD
TO-268
6
4
g
g
Symbol
TestConditions
Characteristic Values
(TJ = 25°C, unless otherwise specified)
min. typ. max.
Applications
z AC motor speed control
BVCES
VGE(th)
IC = 250 µA, VGE = 0 V
Temperature Coefficent
IC = 250 µA, VCE = VGE
Temperature Coefficent
1700
3.0
V
%/K
V
z Uninterruptible power supplies (UPS)
z Switched-mode and resonant-mode
power supplies
0.10
6.0
- 0.24
%/K
z Capacitor discharge circuits
ICES
VCE = 0.8 VCES
VGE = 0 V
TJ = 25°C
TJ = 125°C
10 µA
100 µA
Advantages
IGES
VCE = 0 V, VGE = 20 V
IC = IC90, VGE = 15 V
100 nA
z High power density
z Suitable for surface mounting
z Easy to mount with 1 screw,
(isolated mounting screw hole)
VCE(sat)
4.7
5.0
6.0
V
V
TJ = 125°C
DS99333(02/05)
© 2005 IXYS All rights reserved
IXBH 28N170A
IXBT 28N170A
Symbol
gfs
TestConditions
Characteristic Values
(TJ = 25°C, unless otherwise specified)
min. typ. max.
TO-247 AD Outline
IC = IC90; VCE = 10 V,
12
17
S
Pulse test, t ≤ 300 µs, duty cycle ≤ 2 %
∅ P
Cies
Coes
Cres
2800
132
42
pF
pF
pF
VCE = 25 V, VGE = 0 V, f = 1 MHz
IC = IC90, VGE = 15 V, VCE = 0.5 VCES
Inductive load, TJ = 25°C
Qg
105
20
nC
nC
nC
e
Qge
Qgc
Dim.
Millimeter
Inches
35
Min.
Max.
Min. Max.
A
A1
A2
4.7
2.2
2.2
5.3
2.54
2.6
.185 .209
.087 .102
.059 .098
td(on)
tri
td(off)
tfi
35
36
ns
ns
ns
ns
mJ
b
b1
b2
1.0
1.65
2.87
1.4
2.13
3.12
.040 .055
.065 .084
.113 .123
265
50
IC = IC90, VGE = 15 V
VCE = 850 V, RG = Roff = 10 Ω
C
D
E
.4
.8
.016 .031
.819 .845
.610 .640
20.80 21.46
15.75 16.26
Eoff
1.2
e
L
L1
5.20
19.81 20.32
4.50
5.72 0.205 0.225
td(on)
tri
35
36
ns
ns
mJ
ns
ns
.780 .800
.177
∅P 3.55
Q
3.65
.140 .144
Inductive load, TJ = 125°C
IC = IC90, VGE = 15 V
Eon
td(off)
tfi
0.7
5.89
6.40 0.232 0.252
R
S
4.32
6.15 BSC
5.49
.170 .216
242 BSC
290
150
VCE = 850 V, RG = Roff = 10 Ω
Eoff
2.3
mJ
TO-268 Outline
RthJC
RthCK
0.42 K/W
K/W
(TO-247)
0.25
ReverseDiode
Characteristic Values
(TJ = 25°C, unless otherwise specified)
min. typ. max.
Symbol
VF
TestConditions
IF = IC90, VGE = 0 V, Pulse test,
< 300 us, duty cycle d < 2%
3.0
V
t
IRM
trr
IF = IC90, VGE = 0 V, -diF/dt = 50 A/us
vR = 100 V
25
360
A
ns
Min Recommended Footprint
IXYS reserves the right to change limits, test conditions, and dimensions.
IXYSMOSFETs andIGBTsarecovered byoneormore
ofthefollowingU.S.patents:
4,835,592 4,881,106 5,017,508 5,049,961 5,187,117 5,486,715 6,306,728B1 6,259,123B1 6,306,728B1
4,850,072 4,931,844 5,034,796 5,063,307 5,237,481 5,381,025 6,404,065B1 6,162,665 6,534,343
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