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IXFX48N60Q3 [LITTELFUSE]

Power Field-Effect Transistor,;
IXFX48N60Q3
型号： IXFX48N60Q3
厂家： LITTELFUSE    LITTELFUSE
描述：

Power Field-Effect Transistor,
文件： 总6页 (文件大小：129K)
中文：  中文翻译
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Advance Technical Information  
HiperFETTM  
Power MOSFETs  
Q3-Class  
VDSS = 600V  
ID25 = 48A  
RDS(on) ≤ 140mΩ  
IXFK48N60Q3  
IXFX48N60Q3  
trr  
≤ 300ns  
N-Channel Enhancement Mode  
Avalanche Rated  
TO-264 (IXFK)  
Fast Intrinsic Rectifier  
Symbol  
VDSS  
Test Conditions  
Maximum Ratings  
G
D
S
TJ = 25°C to 150°C  
TJ = 25°C to 150°C, RGS = 1MΩ  
600  
600  
V
V
VDGR  
Tab  
VGSS  
VGSM  
Continuous  
Transient  
±30  
±40  
V
V
PLUS247 (IXFX)  
ID25  
IDM  
TC = 25°C  
TC = 25°C, Pulse Width Limited by TJM  
48  
A
A
120  
IA  
TC = 25°C  
TC = 25°C  
48  
2
A
J
G
EAS  
D
S
Tab  
dv/dt  
PD  
IS ≤ IDM, VDD ≤ VDSS, TJ ≤ 150°C  
TC = 25°C  
50  
V/ns  
W
G = Gate  
S = Source  
D
= Drain  
1000  
Tab = Drain  
TJ  
TJM  
Tstg  
-55 ... +150  
150  
-55 ... +150  
°C  
°C  
°C  
Features  
TL  
TSOLD  
1.6mm (0.062 in.) from Case for 10s  
Plastic Body for 10s  
300  
260  
°C  
°C  
z
Low Intrinsic Gate Resistance  
Low Package Inductance  
Fast Intrinsic Rectifier  
Low RDS(on) and QG  
z
z
z
Md  
FC  
Mounting Torque (TO-264)  
Mounting Force (PLUS247)  
1.13/10  
Nm/lb.in.  
N/lb.  
20..120 /4.5..27  
Weight  
TO-264  
PLUS247  
10  
6
g
g
Advantages  
z
High Power Density  
Easy to Mount  
Space Savings  
z
z
Symbol  
Test Conditions  
Characteristic Values  
Applications  
(TJ = 25°C Unless Otherwise Specified)  
Min.  
600  
3.5  
Typ.  
Max.  
BVDSS  
VGS(th)  
IGSS  
VGS = 0V, ID = 1mA  
VDS = VGS, ID = 4mA  
VGS = ±30V, VDS = 0V  
VDS = VDSS, VGS = 0V  
V
V
z
DC-DC Converters  
Battery Chargers  
Switch-Mode and Resonant-Mode  
z
6.5  
z
±200 nA  
Power Supplies  
DC Choppers  
Temperature and Lighting Controls  
z
IDSS  
25 μA  
1 mA  
z
TJ = 125°C  
RDS(on)  
VGS = 10V, ID = 0.5 • ID25, Note 1  
140 mΩ  
DS100348(06/11)  
© 2011 IXYS CORPORATION, All Rights Reserved  
IXFK48N60Q3  
IXFX48N60Q3  
Symbol  
Test Conditions  
Characteristic Values  
TO-264 AA Outline  
(TJ = 25°C Unless Otherwise Specified)  
Min.  
Typ.  
Max.  
gfs  
VDS = 20V, ID = 0.5 • ID25, Note 1  
VGS = 0V, VDS = 25V, f = 1MHz  
Gate Input Resistance  
20  
36  
S
Ciss  
Coss  
Crss  
7020  
790  
70  
pF  
pF  
pF  
RGi  
0.13  
37  
Ω
: 1 - Gate  
2 - Drain  
td(on)  
ns  
Resistive Switching Times  
VGS = 10V, VDS = 0.5 • VDSS, ID = 0.5 • ID25  
RG = 1Ω (External)  
3 - Source  
4 - Drain  
tr  
11  
40  
ns  
ns  
Dim.  
Millimeter  
Inches  
td(off)  
Min.  
Max.  
Min.  
Max.  
A
A1  
A2  
4.82  
2.54  
2.00  
5.13  
2.89  
2.10  
.190  
.100  
.079  
.202  
.114  
.083  
tf  
9
ns  
Qg(on)  
Qgs  
140  
54  
nC  
nC  
nC  
b
b1  
b2  
c
D
E
e
J
1.12  
2.39  
2.90  
0.53  
25.91 26.16  
19.81 19.96  
5.46 BSC  
0.00  
0.00  
1.42  
2.69  
3.09  
.044  
.094  
.114  
.021  
1.020  
.780  
.215 BSC  
.000  
.000  
.056  
.106  
.122  
.033  
1.030  
.786  
VGS = 10V, VDS = 0.5 • VDSS, ID = 0.5 • ID25  
0.83  
Qgd  
60  
RthJC  
RthCS  
0.125 °C/W  
°C/W  
0.25  
0.25  
.010  
.010  
0.15  
K
L
L1  
20.32 20.83  
.800  
.090  
.820  
.102  
2.29  
2.59  
P
3.17  
3.66  
.125  
.144  
Q
Q1  
6.07  
8.38  
6.27  
8.69  
.239  
.330  
.247  
.342  
Source-Drain Diode  
R
R1  
3.81  
1.78  
4.32  
2.29  
.150  
.070  
.170  
.090  
S
T
6.04  
1.57  
6.30  
1.83  
.238  
.062  
.248  
.072  
Symbol  
Test Conditions  
Characteristic Values  
(TJ = 25°C Unless Otherwise Specified)  
Min.  
Typ.  
Max.  
PLUS 247TM Outline  
IS  
VGS = 0V  
48  
A
A
V
ISM  
VSD  
Repetitive, Pulse Width Limited by TJM  
IF = IS, VGS = 0V, Note 1  
192  
1.4  
trr  
QRM  
IRM  
300 ns  
IF = 24A, -di/dt = 100A/μs  
2.2  
15.4  
μC  
A
VR = 100V, VGS = 0V  
Note  
1. Pulse test, t ≤ 300μs, duty cycle, d ≤ 2%.  
Terminals: 1 - Gate  
2 - Drain  
3 - Source  
Dim.  
Millimeter  
Min. Max.  
Inches  
Min. Max.  
A
A1  
A2  
4.83  
2.29  
1.91  
5.21  
2.54  
2.16  
.190 .205  
.090 .100  
.075 .085  
ADVANCE TECHNICAL INFORMATION  
b
b1  
b2  
1.14  
1.91  
2.92  
1.40  
2.13  
3.12  
.045 .055  
.075 .084  
.115 .123  
The product presented herein is under development. The Technical Specifications offered are derived  
from a subjective evaluation of the design, based upon prior knowledge and experience, and constitute a  
"considered reflection" of the anticipated result. IXYS reserves the right to change limits, test  
conditions, and dimensions without notice.  
C
D
E
0.61  
20.80 21.34  
15.75 16.13  
0.80  
.024 .031  
.819 .840  
.620 .635  
e
5.45 BSC  
.215 BSC  
L
L1  
19.81 20.32  
.780 .800  
.150 .170  
3.81  
4.32  
Q
R
5.59  
4.32  
6.20  
4.83  
.220 0.244  
.170 .190  
IXYS Reserves the Right to Change Limits, Test Conditions, and Dimensions.  
IXYS MOSFETs and IGBTs are covered  
by one or more of the following U.S. patents: 4,850,072 5,017,508  
4,881,106 5,034,796  
4,835,592 4,931,844  
5,049,961  
5,063,307  
5,187,117  
5,237,481  
5,381,025  
5,486,715  
6,162,665  
6,259,123 B1  
6,306,728 B1  
6,404,065 B1 6,683,344  
6,534,343  
6,583,505  
6,727,585  
6,710,405 B2 6,759,692  
6,710,463  
7,005,734 B2 7,157,338B2  
7,063,975 B2  
6,771,478 B2 7,071,537  
IXFK48N60Q3  
IXFX48N60Q3  
Fig. 1. Output Characteristics @ TJ = 25ºC  
Fig. 2. Extended Output Characteristics @ TJ = 25ºC  
50  
40  
30  
20  
10  
0
VGS = 10V  
VGS = 10V  
100  
80  
60  
40  
20  
0
9V  
8V  
9V  
8V  
7V  
7V  
6V  
0
0
0
1
2
3
4
5
6
7
0
5
10  
15  
20  
25  
30  
VDS - Volts  
VDS - Volts  
Fig. 4. RDS(on) Normalized to ID = 24A Value vs.  
Junction Temperature  
Fig. 3. Output Characteristics @ TJ = 125ºC  
50  
40  
30  
20  
10  
0
3.4  
3.0  
2.6  
2.2  
1.8  
1.4  
1.0  
0.6  
0.2  
VGS = 10V  
8V  
VGS = 10V  
I D = 48A  
I D = 24A  
7V  
6V  
5V  
2
4
6
8
10  
12  
14  
16  
-50  
-25  
0
25  
50  
75  
100  
125  
150  
VDS - Volts  
TJ - Degrees Centigrade  
Fig. 5. RDS(on) Normalized to ID = 24A Value vs.  
Drain Current  
Fig. 6. Maximum Drain Current vs.  
Case Temperature  
50  
45  
40  
35  
30  
25  
20  
15  
10  
5
3.0  
2.6  
2.2  
1.8  
1.4  
1.0  
0.6  
VGS = 10V  
TJ = 125ºC  
TJ = 25ºC  
0
-50  
-25  
0
25  
50  
75  
100  
125  
150  
10  
20  
30  
40  
50  
60  
70  
80  
90  
100  
110  
ID - Amperes  
TC - Degrees Centigrade  
© 2011 IXYS CORPORATION, All Rights Reserved  
IXFK48N60Q3  
IXFX48N60Q3  
Fig. 7. Input Admittance  
Fig. 8. Transconductance  
80  
70  
60  
50  
40  
30  
20  
10  
0
70  
60  
50  
40  
30  
20  
10  
0
TJ = - 40ºC  
25ºC  
125ºC  
TJ = 125ºC  
25ºC  
- 40ºC  
4.5  
0.2  
0
5.0  
5.5  
6.0  
6.5  
7.0  
7.5  
8.0  
8.5  
9.0  
9.5  
10.0  
1.3  
40  
0
10  
20  
30  
40  
50  
60  
70  
80  
VGS - Volts  
ID - Amperes  
Fig. 10. Gate Charge  
Fig. 9. Forward Voltage Drop of Intrinsic Diode  
16  
14  
12  
10  
8
160  
140  
120  
100  
80  
VDS = 300V  
I D = 24A  
I G = 10mA  
6
60  
TJ = 125ºC  
4
40  
TJ = 25ºC  
20  
2
0
0
0.3  
0.4  
0.5  
0.6  
0.7  
0.8  
0.9  
1.0  
1.1  
1.2  
0
50  
100  
150  
200  
VSD - Volts  
QG - NanoCoulombs  
Fig. 12. Forward-Bias Safe Operating Area  
Fig. 11. Capacitance  
1000  
100  
10  
100,000  
10,000  
1,000  
100  
= 1 MHz  
f
RDS(on) Limit  
C
iss  
25µs  
100µs  
C
oss  
1ms  
C
rss  
1
TJ = 150ºC  
TC = 25ºC  
Single Pulse  
10ms  
10  
0.1  
5
10  
15  
20  
25  
30  
35  
10  
100  
1,000  
VDS - Volts  
VDS - Volts  
IXYS Reserves the Right to Change Limits, Test Conditions, and Dimensions.  
IXFK48N60Q3  
IXFX48N60Q3  
Fig. 13. Maximum Transient Thermal Impedance  
1
0.1  
0.01  
0.001  
0.00001  
0.0001  
0.001  
0.01  
0.1  
1
10  
Pulse Width - Seconds  
© 2011 IXYS CORPORATION, All Rights Reserved  
IXYS REF: F_48N60Q3(R8) 6-22-11  
Disclaimer Notice - Information furnished is believed to be accurate and reliable. However, users should independently  
evaluate the suitability of and test each product selected for their own applications. Littelfuse products are not designed for,  
and may not be used in, all applications. Read complete Disclaimer Notice at www.littelfuse.com/disclaimer-electronics.  

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