IXGN100N170 [LITTELFUSE]
Insulated Gate Bipolar Transistor, 160A I(C), 1700V V(BR)CES, N-Channel, MINIBLOC-4;型号: | IXGN100N170 |
厂家: | LITTELFUSE |
描述: | Insulated Gate Bipolar Transistor, 160A I(C), 1700V V(BR)CES, N-Channel, MINIBLOC-4 局域网 栅 瞄准线 功率控制 晶体管 |
文件: | 总6页 (文件大小:186K) |
中文: | 中文翻译 | 下载: | 下载PDF数据表文档文件 |
VCES = 1700V
IC90 = 95A
VCE(sat) 3.0V
High Voltage
IGBT
IXGN100N170
E
SOT-227B, miniBLOC
E153432
Symbol
Test Conditions
Maximum Ratings
E
VCES
VCGR
TJ = 25°C to 150°C
1700
1700
V
V
G
TJ = 25°C to 150°C, RGE = 1M
VGES
VGEM
Continuous
Transient
±20
±30
V
V
E
IC25
IC90
TC = 25°C
TC = 90°C
160
95
A
A
C
ICM
TC = 25°C, 1ms
600
A
G = Gate, C = Collector, E = Emitter
either emitter terminal can be used as
Main or Kelvin Emitter
SSOA
(RBSOA)
VGE = 15V, TVJ = 125°C, RG = 1
Clamped Inductive Load
ICM = 200
A
@0.8 • VCES
tsc
VGE = 15V, VCE = 1250V, TJ = 125°C
10
μs
(SCSOA)
RG = 10, Non Repetitive
PC
TC = 25°C
735
W
Features
TJ
TJM
Tstg
-55 ... +150
150
°C
°C
°C
Optimized for Low Conduction and
-55 ... +150
Switching Losses
Isolation Voltage 2500V~
Short Circuit Capability
International Standard Package
VISOL
50/60Hz
IISOL 1mA
t = 1min
t = 1s
2500
3000
V~
V~
Md
Mounting Torque
Terminal Connection Torque
1.5/13
1.3/11.5
Nm/lb.in.
Nm/lb.in.
High Current Handling Capability
Weight
30
g
Advantages
High Power Density
Low Gate Drive Requirement
Applications
Symbol
Test Conditions
Characteristic Values
(TJ = 25C, Unless Otherwise Specified)
Min.
1700
3.0
Typ.
Max.
Power Inverters
UPS
Motor Drives
SMPS
PFC Circuits
Welding Machines
BVCES
VGE(th)
ICES
IC = 3mA, VGE = 0V
IC = 8mA, VCE = VGE
VCE = VCES, VGE = 0V
V
V
5.0
50 A
mA
200 nA
2.5 3.0
TJ = 125C
3
IGES
VCE = 0V, VGE = 20V
VCE(sat)
IC = 100A, VGE = 15V, Note 1
V
© 2016 IXYS CORPORATION, All Rights Reserved
DS100091B(10/16)
IXGN100N170
Symbol Test Conditions
Characteristic Values
(TJ = 25°C Unless Otherwise Specified)
Min.
Typ.
Max.
gfs
IC = 60A, VCE = 10V, Note 1
36
64
S
Cies
Coes
Cres
9200
455
pF
pF
pF
VCE = 25V, VGE = 0V, f = 1MHz
150
Qg
Qge
Qgc
425
65
nC
nC
nC
IC = 100A, VGE = 15V, VCE = 0.5 • VCES
186
td(on)
tr
td(off)
tf
35
192
285
395
ns
ns
ns
ns
Resistive load, TJ = 25°C
IC = 100A, VGE = 15V
VCE = 0.5 • VCES, RG = 1
td(on)
tr
td(off)
tf
35
ns
ns
Resistive load, TJ = 125°C
IC = 100A, VGE = 15V
250
285
435
ns
ns
VCE = 0.5 • VCES, RG = 1
RthJC
RthCS
0.17 °C/W
°C/W
0.05
Note:
1. Pulse test, t 300μs, duty cycle, d 2%.
SOT-227B (IXGN) OUTLINE
M4-7 NUT
(4 PLACES)
J
A
B
D
N
C
M
L
S
E
F
G
H
O
U
IXYS Reserves the Right to Change Limits, Test Conditions, and Dimensions.
IXYS MOSFETs and IGBTs are covered
by one or more of the following U.S. patents: 4,860,072 5,017,508
4,881,106 5,034,796
4,835,592 4,931,844
5,049,961
5,063,307
5,187,117
5,237,481
5,381,025
5,486,715
6,162,665
6,259,123 B1
6,306,728 B1
6,404,065 B1 6,683,344
6,727,585
7,005,734 B2 7,157,338B2
7,063,975 B2
6,534,343
6,583,505
6,710,405 B2 6,759,692
6,710,463
6,771,478 B2 7,071,537
IXGN100N170
Fig. 1. Output Characteristics @ TJ = 25ºC
Fig. 2. Extended Output Characteristics @ TJ = 25ºC
200
150
100
50
350
300
250
200
150
100
50
V
= 15V
GE
V
= 15V
GE
13V
11V
13V
11V
9V
7V
9V
7V
5V
5V
0
0
0
0.5
1
1.5
2
2.5
3
3.5
4
0
1
2
3
4
5
6
7
8
9
10
VCE - Volts
VCE - Volts
Fig. 4. Dependence of VCE(sat) on
Junction Temperature
Fig. 3. Output Characteristics @ TJ = 125ºC
2.0
1.8
1.6
1.4
1.2
1.0
0.8
0.6
200
150
100
50
V
= 15V
GE
V
= 15V
13V
11V
GE
I
=200A
C
9V
7V
I
= 100A
C
5V
I
= 50A
75
C
0
0
0.5
1
1.5
2
2.5
3
3.5
4
4.5
5
-50
-25
0
25
50
100
125
150
VCE - Volts
TJ - Degrees Centigrade
Fig. 5. Collector-to-Emitter Voltage
vs. Gate-to-Emitter Voltage
Fig. 6. Input Admittance
6.5
5.5
4.5
3.5
2.5
1.5
180
160
140
120
100
80
T
J
= 25ºC
I
= 200A
C
T
J
= - 40ºC
25ºC
125ºC
100A
60
40
50A
6
20
0
5
7
8
9
10
11
12
13
14
15
4.0
4.5
5.0
5.5
6.0
6.5
7.0
7.5
8.0
VGE - Volts
VGE - Volts
© 2016 IXYS CORPORATION, All Rights Reserved
IXGN100N170
Fig. 8. Gate Charge
Fig. 7. Transconductance
110
100
90
80
70
60
50
40
30
20
10
0
16
14
12
10
8
T
= - 40ºC
J
V
I
= 850V
CE
= 100A
= 10mA
C
I
G
25ºC
125ºC
6
4
2
0
0
20
40
60
80
100
120
140
160
180
200
0
50
100
150
200
250
300
350
400
450
IC - Amperes
QG - NanoCoulombs
Fig. 9. Reverse-Bias Safe Operating Area
Fig. 10. Capacitance
100,000
10,000
1,000
100
= 1 MHz
f
200
160
120
80
C
ies
C
oes
T
= 125ºC
J
40
R
= 1Ω
G
dv / dt < 10V / ns
C
res
0
200
400
600
800
1000
1200
1400
1600
1800
0
5
10
15
20
25
30
35
40
VCE - Volts
VCE - Volts
Fig. 11. Maximum Transient Thermal Impedance
1
0.1
0.01
0.001
0.0001
0.001
0.01
0.1
1
10
Pulse Width - Seconds
IXYS Reserves the Right to Change Limits, Test Conditions, and Dimensions.
IXGN100N170
Fig. 12. Resistive Turn-on Rise Time
vs. Junction Temperature
Fig. 13. Resistive Turn-on Rise Time
vs. Collector Current
320
280
240
200
160
120
80
320
280
240
200
160
120
80
R
= 1Ω, V = 15V
GE
G
R
= 1Ω, V = 15V
GE
G
V
= 850V
CE
V
= 850V
CE
I
= 100A
C
T = 125ºC
J
T
J
= 25ºC
I
= 50A
C
40
40
50
55
60
65
70
75
80
85
90
95
100
25
35
45
55
65
75
85
95
105
115
125
IC - Amperes
TJ - Degrees Centigrade
Fig. 15. Resistive Turn-off Switching Times
vs. Junction Temperature
Fig. 14. Resistive Turn-on Switching Times
vs. Gate Resistance
450
400
350
300
250
200
150
100
50
65
60
55
50
45
40
35
30
25
1000
900
800
700
600
500
400
300
200
400
380
360
340
320
300
280
260
240
t f
td(off)
t r
td(on
)
R
G
= 1Ω, VGE = 15V
T
J
= 125ºC, V = 15V
GE
VCE = 850V
V
= 850V
CE
IC = 50A
I
= 100A
C
I
= 50A
C
IC = 100A
25
35
45
55
65
75
85
95
105
115
125
1
2
3
4
5
6
7
8
9
10
TJ - Degrees Centigrade
RG - Ohms
Fig. 16. Resistive Turn-off Switching Times
vs. Collector Current
Fig. 17. Resistive Turn-off Switching Times
vs. Gate Resistance
1000
900
800
700
600
500
400
300
200
420
400
380
360
340
320
300
280
260
1100
1000
900
800
700
600
500
400
300
900
800
700
600
500
400
300
200
100
t f
td(off
)
t f
td(off
)
T
J
= 125ºC, V = 15V
GE
R
G
= 1Ω, V = 15V
GE
V
= 850V
CE
V
= 850V
CE
I
= 50A
C
T
J
= 125ºC
T
J
= 25ºC
I
= 100A
C
1
2
3
4
5
6
7
8
9
10
50
55
60
65
70
75
80
85
90
95
100
IC - Amperes
RG - Ohms
© 2016 IXYS CORPORATION, All Rights Reserved
IXYS REF: IXG_100N170(9P)01-26-12-A
Disclaimer Notice - Information furnished is believed to be accurate and reliable. However, users should independently
evaluate the suitability of and test each product selected for their own applications. Littelfuse products are not designed for,
and may not be used in, all applications. Read complete Disclaimer Notice at www.littelfuse.com/disclaimer-electronics.
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