IXGR40N60B [LITTELFUSE]

Insulated Gate Bipolar Transistor, 70A I(C), 600V V(BR)CES, N-Channel, ISOPLUS247, 3 PIN;


型号：	IXGR40N60B
厂家：	LITTELFUSE
描述：	Insulated Gate Bipolar Transistor, 70A I(C), 600V V(BR)CES, N-Channel, ISOPLUS247, 3 PIN 栅功率控制晶体管
文件：	总2页 (文件大小：55K)
中文：	中文翻译
下载：	下载PDF数据表文档文件

HiPerFAST^TMIGBT

= 600 V

= 70 A

= 2.1 V

IXGR 40N60B

IXGR 40N60BD1

CES

ISOPLUS247^TM

C25

t ^CE(sat)= 180 ns

(Electrically Isolated Backside)

fi(typ)

(D1)

Symbol

TestConditions

Maximum Ratings

ISOPLUS 247

E153432

V_CES

V_CGR

T_J= 25°C to 150°C

600

T_J= 25°C to 150°C; R_GE= 1 MΩ

V_GES

V_GEM

Continuous

Transient

±20

±30

I_C25

I_C90

I_CM

T_C= 25°C

Isolated Backside*

T_C= 90°C

T_C= 25°C, 1 ms

150

G = Gate,

E=Emitter

C = Collector

SSOA

(RBSOA)

_GE= 15 V, T_VJ= 125°C, R_G= 10 Ω

I_CM= 80

@ 0.8 V_CES

Clamped inductive load, L = 100 µH

* Patent pending

P_C

T_C= 25°C

200

T_J

-40 ... +150

150

°C

T_JM

T_stg

Features

-40 ... +150

DCB Isolated mounting tab

Maximum lead temperature for soldering

1.6 mm (0.062 in.) from case for 10 s

300

°C

Meets TO-247AD package Outline

High current handling capability

Latest generation HDMOS^TMprocess

Weight

MOS Gate turn-on

- drive simplicity

Low collector-to-drain capacitance

Symbol

TestConditions

Characteristic Values

(T_J= 25°C, unless otherwise specified)

Min. Typ. Max.

(<35pF)

Applications

BV_CES

V_GE(th)

I_CES

I_C= 250 µA, V_GE= 0 V

I_C= 750 µA

40N60B

40N60BD1

600

Uninterruptible power supplies (UPS)

Switched-mode and resonant-mode

power supplies

I_C= 250 µA, V_CE= V_GE

I_C= 500 µA

40N60B

40N60BD1 2.5

2.5

5.0

AC motor speed control

V_CE= 0.8 V_CEST_J= 25°C

V_GE= 0 V; note 1 T_J= 25°C

T_J= 125°C

40N60B

40N60BD1

40N60B

200 µA

650 µA

DC servo and robot drives

DC choppers

T_J= 125°C

40N60BD1

Advantages

I_GES

V_CE= 0 V, V_GE= ±20 V

I_C= I_T, V_GE= 15 V

±100 nA

2.1

^lEasy assembly

High power density

V_CE(sat)

1.6

98800A (02/02)

IXGR 40N60B

IXGR 40N60BD1

Symbol

TestConditions

Characteristic Values

(T_J= 25°C, unless otherwise specified)

min. typ. max.

ISOPLUS247OUTLINE

g_fs

I_C= I_T; V_CE= 10 V,

Pulse test, t ≤ 300 µs, duty cycle ≤ 2 %

C_ies

3300

310

370

40N60B

C_oes

C_res

V_CE= 25 V, V_GE= 0 V, f = 1 MHz 40N60BD1

Q_g

116

Q_ge

Q_gc

I_C= I_T, V_GE= 15 V, V_CE= 0.5 V_CES

1 Gate, 2 Drain (Collector)

3 Source (Emitter)

4 no connection

t_d(on)

t_ri

t_d(off)

t_fi

Inductive load, T_J= 25°C

I_C= I_T, V_GE= 15 V

Dim.

Millimeter

Inches

180 300

180 270

Min.

Max. Min. Max.

V_CE= 0.8 V_CES, R_G= R_off= 4.7 Ω

A₁

A₂

4.83

2.29

1.91

5.21

2.54

2.16

.190 .205

.090 .100

.075 .085

Remarks: Switching times may increase

for V_CE(Clamp) > 0.8 V_CES, higher T_Jor

increased R_G

E_off

2.7

4.0

b₁

b₂

1.14

1.91

2.92

1.40

2.13

3.12

.045 .055

.075 .084

.115 .123

t_d(on)

t_ri

0.61

0.80

20.80 21.34

15.75 16.13

.024 .031

.819 .840

.620 .635

Inductive load, T_J= 125°C

I_C= I_T, V_GE= 15 V

E_on

t_d(off)

40N60B

40N60BD1

0.4

1.2

5.45 BSC

19.81 20.32

.215 BSC

.780 .800

.150 .170

_CE= 0.8 V_CES, R_G= R_off= 4.7 Ω

3.81

4.32

Remarks:Switchingtimesmay

increase for V_CE(Clamp) > 0.8 V_CES

higherT_JorincreasedR_G

t_fi

300

270

4.0

5.59

4.32

6.20

4.83

.220 .244

.170 .190

E_off

R_thJC

R_thCK

0.6 K/W

K/W

0.15

ReverseDiode(FRED)(IXGR40N60BD1)

Characteristic Values

(T_J= 25°C, unless otherwise specified)

Symbol

TestConditions

min. typ. max.

V_F

I_RM

I_F= I , V_GE= 0 V,

Note^T1

T_J= 150°C

1.3

1.8

I_F= I_T, V_GE= 0 V, V_R= 100 V T_J= 100°C,-di/dt = 100 A/µs

I_F= 1 A; -di/dt = 100 A/µs; V_R= 30 V

7.5

t_rr

R_thJC

0.90 K/W

Note: 1. Pulse test, t_p≤ 300 ms, duty cycle:d ≤ 2 %

2. I_T= 40A

IXYS reserves the right to change limits, test conditions, and dimensions.

IXYSMOSFETSandIGBTsarecoveredbyoneormoreofthefollowingU.S.patents:

4,835,592

4,850,072

4,881,106

4,931,844

5,017,508

5,034,796

5,049,961

5,063,307

5,187,117

5,237,481

5,486,715 6,306,728B1

5,381,025

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