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IXGR40N60C [IXYS]

HiPerFAST IGBT ISOPLUS247; HiPerFAST IGBT ISOPLUS247
IXGR40N60C
型号： IXGR40N60C
厂家： IXYS CORPORATION    IXYS CORPORATION
描述：

HiPerFAST IGBT ISOPLUS247
HiPerFAST IGBT ISOPLUS247

晶体 晶体管 功率控制 双极性晶体管 栅 局域网
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Advanced Technical Information  
HiPerFASTTM IGBT  
VCES = 600 V  
IC25 = 75 A  
VCE(sat) = 2.5 V  
tfi(typ) = 75 ns  
IXGR 40N60C  
IXGR 40N60CD1  
ISOPLUS247TM  
(Electrically Isolated Backside)  
(D1)  
Symbol  
TestConditions  
Maximum Ratings  
ISOPLUS 247  
E153432  
VCES  
VCGR  
TJ = 25°C to 150°C  
600  
600  
V
V
TJ = 25°C to 150°C; RGE = 1 MW  
VGES  
VGEM  
Continuous  
Transient  
±20  
±30  
V
V
G
C
E
Isolated Backside*  
IC25  
IC110  
ICM  
TC = 25°C  
75  
35  
A
A
A
TC = 110°C  
TC = 25°C, 1 ms  
150  
G = Gate,  
E=Emitter  
C = Collector  
SSOA  
VGE = 15 V, TVJ = 125°C, RG = 10 W  
ICM = 80  
A
(RBSOA)  
Clamped inductive load  
@ 0.8 VCES  
* Patent pending  
PC  
TC = 25°C  
200  
W
TJ  
-55 ... +150  
150  
°C  
°C  
°C  
Features  
TJM  
Tstg  
l DCB Isolated mounting tab  
-55 ... +150  
l Meets TO-247AD package Outline  
l High current handling capability  
l Latest generation HDMOSTM process  
l MOS Gate turn-on  
- drive simplicity  
Maximum lead temperature for soldering  
1.6 mm (0.062 in.) from case for 10 s  
300  
°C  
Md  
Mounting torque (M3)  
1.13/10Nm/lb.in.  
Weight  
5
g
Applications  
Symbol  
TestConditions  
Characteristic Values  
(TJ = 25°C, unless otherwise specified)  
Min. Typ. Max.  
l Uninterruptible power supplies (UPS)  
l Switched-mode and resonant-mode  
power supplies  
l AC motor speed control  
l DC servo and robot drives  
l DC choppers  
BVCES  
VGE(th)  
ICES  
IC = 250 mA, VGE = 0 V  
IC = 750 mA  
40N60C  
40N60CD1  
600  
600  
V
IC = 250 mA, VCE = VGE  
IC = 500 mA  
40N60C  
40N60CD1 2.5  
2.5  
5.0  
5.0  
V
V
VCE = 0.8 • VCES TJ = 25°C  
VGE = 0 V; note 1 TJ = 25°C  
TJ = 125°C  
40N60C  
40N60CD1  
40N60C  
200 mA  
650 mA  
Advantages  
1
mA  
TJ = 125°C  
40N60CD1  
3
mA  
l Easy assembly  
l High power density  
l Very fast switching speeds for high  
IGES  
VCE = 0 V, VGE = ±20 V  
IC = IT, VGE = 15 V  
±100 nA  
2.5  
VCE(sat)  
V
frequency applications  
© 2001 IXYS All rights reserved  
98803 (01/01)  
IXGR 40N60C  
IXGR 40N60CD1  
Symbol  
TestConditions  
Characteristic Values  
(TJ = 25°C, unless otherwise specified)  
min. typ. max.  
ISOPLUS247OUTLINE  
gfs  
IC = IT; VCE = 10 V,  
30  
40  
S
Pulse test, t £ 300 ms, duty cycle £ 2 %  
Cies  
3300  
310  
pF  
pF  
pF  
40N60C  
Coes  
Cres  
VCE = 25 V, VGE = 0 V, f = 1 MHz 40N60CD1 370  
65  
pF  
Qg  
116  
nC  
nC  
nC  
Qge  
Qgc  
IC = IT, VGE = 15 V, VCE = 0.5 VCES  
23  
55  
1 Gate, 2 Drain (Collector)  
3 Source (Emitter)  
4 no connection  
td(on)  
tri  
td(off)  
tfi  
25  
ns  
ns  
ns  
ns  
Inductive load, TJ = 25°C  
30  
IC = IT, VGE = 15 V  
Dim.  
Millimeter  
Inches  
100 150  
75 150  
Min.  
Max. Min. Max.  
VCE = 0.8 • VCES, RG = Roff = 4.7 W  
A
A1  
A2  
4.83  
2.29  
1.91  
5.21  
2.54  
2.16  
.190 .205  
.090 .100  
.075 .085  
Remarks: Switching times may increase  
for VCE (Clamp) > 0.8 • VCES, higher TJ or  
increased RG  
Eoff  
0.85 1.70 mJ  
b
b1  
b2  
1.14  
1.91  
2.92  
1.40  
2.13  
3.12  
.045 .055  
.075 .084  
.115 .123  
td(on)  
tri  
25  
35  
ns  
ns  
C
D
E
0.61  
0.80  
20.80 21.34  
15.75 16.13  
.024 .031  
.819 .840  
.620 .635  
Inductive load, TJ = 125°C  
IC = IT, VGE = 15 V  
Eon  
td(off)  
tfi  
40N60C  
0.4  
mJ  
mJ  
ns  
e
L
L1  
5.45 BSC  
19.81 20.32  
.215 BSC  
.780 .800  
.150 .170  
VCE = 0.8 • VCES, RG = Roff = 4.7 W  
40N60CD1 1.2  
3.81  
4.32  
Remarks:Switchingtimesmayincreasefor  
VCE (Clamp) > 0.8 • VCES, higher TJ or  
increased RG  
150  
105  
1.2  
Q
R
5.59  
4.32  
6.20  
4.83  
.220 .244  
.170 .190  
ns  
Eoff  
mJ  
RthJC  
RthCK  
0.6 K/W  
K/W  
0.15  
ReverseDiode(FRED)(IXGH40N60CD1only)  
Characteristic Values  
(TJ = 25°C, unless otherwise specified)  
Symbol  
VF  
TestConditions  
min. typ. max.  
IF = IT, VGE = 0 V,  
Note 1  
TJ = 150°C  
TJ = 25°C  
1.3  
1.8  
V
V
IRM  
IF = IT, VGE = 0 V, VR = 100 V  
-diF/dt = 100 A/ms  
TJ = 100°C  
7.5  
A
trr  
IF = 1 A; -di/dt = 100 A/ms; VR = 30 V  
3.5  
ns  
RthJC  
0.90 K/W  
Note: 1. Pulse test, tp £ 300 ms, duty cycle:d £ 2 %  
2. IT = 40A  
IXYS reserves the right to change limits, test conditions, and dimensions.  
IXYS MOSFETS and IGBTs are covered by one or more of the following U.S. patents: 4,835,592 4,881,106  
4,850,072 4,931,844  
5,017,508  
5,034,796  
5,049,961 5,187,117 5,486,715  
5,063,307 5,237,481 5,381,025  

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