IXGR40N60C2 [IXYS]
HiPerFASTTM IGBT ISOPLUS247TM C2-Class High Speed IGBTs; HiPerFASTTM IGBT ISOPLUS247TM C2级高速的IGBT
| 型号： | IXGR40N60C2 |
| 厂家： | 
IXYS CORPORATION |
| 描述： | HiPerFASTTM IGBT ISOPLUS247TM C2-Class High Speed IGBTs |
| 文件： | 总6页 (文件大小：183K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
HiPerFASTTM IGBT
ISOPLUS247TM
IXGR 40N60C2
IXGR 40N60C2D1
VCES = 600 V
IC25 = 56 A
VCE(SAT) = 2.7 V
tfi(typ = 32 ns
C2-Class High Speed IGBTs
(Electrically Isolated Back Surface)
PreliminaryDataSheet
ISOPLUS 247TM
(IXGR)
IXGR_C2
IXGR_C2D1
Symbol
TestConditions
Maximum Ratings
G
VCES
VCGR
TJ = 25°C to 150°C
600
600
V
C
TAB
E
TJ = 25°C to 150°C; RGE = 1 MΩ
V
VGES
VGEM
Continuous
Transient
20
30
V
V
G = Gate
E = Emitter
C = Collector
IC25
IC110
ID110
ICM
TC = 25°C
56
A
A
A
A
Features
TC = 110°C
26
27
z
DCB Isolated mounting tab
Meets TO-247AD package Outline
High current handling capability
Latest generation HDMOSTM process
MOS Gate turn-on
TC = 110°C (40N60C2D1)
TC = 25°C, 1 ms
z
z
z
z
200
SSOA
(RBSOA)
VGE = 15 V, TVJ = 125°C, RG = 10 Ω
Clamped inductive load @ VCE ≤ 600 V
ICM = 80
A
- drive simplicity
PC
TC = 25°C
170
W
TJ
-55 ... +150
150
°C
°C
°C
Applications
TJM
Tstg
z
Uninterruptible power supplies (UPS)
-55 ... +150
z
Switched-mode and resonant-mode
power supplies
AC motor speed control
DC servo and robot drives
DC choppers
Maximum Lead temperature for soldering
1.6 mm (0.062 in.) from case for 10 s
300
°C
z
z
z
VISOL
50/60 Hz, RMS, t = 1 minute, IISOL < 1 mA
2500
V~
N/lb.
FC
Mounting force
20..120/4.5..25
4
Advantages
Weight
g
z
Easy assembly
High power density
Very fast switching speeds for high
z
Symbol
TestConditions
Characteristic Values
(TJ = 25°C unless otherwise specified)
min. typ. max.
z
frequency applications
BVCES
VGE(th)
IC = 250μA, VGE = 0 V
IC = 250 μA, VCE = VGE
600
3.0
V
5.0
V
ICES
VCE = VCES
VGE = 0 V
40N60C2
40N60C2/D1
50
100
μA
μA
IGES
VCE = 0 V, VGE = 20 V
IC = 30 A, VGE = 15 V
100
2.7
nA
VCE(sat)
TJ = 25°C
TJ = 125°C
2.2
2.0
V
V
DS99052C(10/05)
© 2005 IXYS All rights reserved
IXGR 40N60C2
IXGR 40N60C2D1
Symbol
gfs
TestConditions
Characteristic Values
(TJ = 25°C unless otherwise specified)
min. typ. max.
ISOPLUS 247 Outline
IC = 30 A; VCE = 10 V,
20
36
S
Pulse test, t ≤ 300 μs, duty cycle ≤ 2 %
Cies
2500
pF
Coes
VCE = 25 V, VGE = 0 V, f = 1 MHz 40N60C2
180
220
pF
pF
40N60C2D1
Cres
54
pF
Qg
95
14
36
nC
nC
nC
Qge
Qgc
IC = 30 A, VGE = 15 V, VCE = 0.5 VCES
td(on)
tri
td(off)
tfi
18
20
ns
ns
Inductive load, TJ = 25°C
IC = 30 A, VGE = 15 V
VCE = 400 V, RG = Roff = 3 Ω
90
140 ns
ns
32
Eoff
0.20
0.37 mJ
td(on)
tri
18
20
ns
ns
Inductive load, TJ = 125°C
IC = 30 A, VGE = 15 V
Eon
40N60C2
0.3
mJ
mJ
40N60C2D1 0.6
VCE = 400 V, RG = Roff = 3 Ω
td(off)
tfi
130
80
ns
240 ns
Eoff
0.50
0.26
mJ
RthJ-DCB
RthJC
(Note 1)
(Note 2)
K/W
0.74 K/W
RthCS
0.15
K/W
ReverseDiode(FRED)(D1VersionOnly)
Characteristic Values
(TJ = 25°C unless otherwise specified)
Symbol
VF
TestConditions
min. typ.
max.
IF = 30 A, VGE = 0 V, Pulse test
t ≤ 300 μs, duty cycle d ≤ 2 %
TJ =150°C
1.6
2.5
V
V
TJ = 25°C
IRM
trr
trr
IF = 30 A, VGE = 0 V, -diF/dt =100 A/μs, TJ = 100°C
VR = 100 V
IF = 1 A; -di/dt = 100 A/μs; VR = 30 V
4
A
ns
ns
100
25
RthJC
RthCS
1.5 K/W
K/W
0.15
Notes:
1. RthJ-DCB is the thermal resistance junction-to-internal side of DCB substrate
2. RthJC is the thermal resistance junction-to-external side of DCB substrate
IXYS reserves the right to change limits, test conditions, and dimensions.
IXYSMOSFETs andIGBTsarecovered by
oneormoreofthefollowingU.S.patents:
4,835,592
4,850,072
4,881,106
4,931,844
5,017,508
5,034,796
5,049,961
5,063,307
5,187,117
5,237,481
5,381,025
5,486,715
6,162,665
6,259,123B1
6,306,728 B1
6,404,065B1
6,534,343
6,583,505
6,683,344
6,710,405B2
6,710,463
6,727,585
6,759,692
6771478B2
IXGR 40N60C2
IXGR 40N60C2D1
Fig. 2. Extended Output Characteristics
@ 25 deg. C
Fig. 1. Output Characteristics
@ 25 Deg. C
210
18 0
15 0
12 0
90
60
30
0
60
50
40
30
20
10
VG E = 15V
13V
11V
VG E = 15V
13V
11V
9V
9V
7V
7V
5V
5V
0
0
25
4
1
2
3
4
VC E - Volts
5
6
7
0.5
0.5
5
1
1.5
2
2.5
3
3.5
VC E - Volts
Fig. 3. Output Characteristics
@ 125 Deg. C
Fig. 4. Temperature Dependence of VCE(sat)
60
50
40
30
20
10
1. 3
1. 2
1. 1
1
VG E = 15V
13V
11V
9V
I C = 60A
VG E = 15V
7V
0.9
0.8
0.7
0.6
I C = 30A
I C = 15A
5V
0
50
75
100
125
150
1
1.5
2
2.5
3
TJ - Degrees Centigrade
VCE - Volts
Fig. 5. Collector-to-Emitter Voltage
vs. Gate-to-Emiiter voltage
Fig. 6. Input Admittance
4
3.5
3
210
18 0
15 0
12 0
90
60
30
0
º
T J = 25 C
2.5
2
I C = 60A
º
TJ = 125 C
30A
1 5 A
º
25 C
º
1. 5
-40 C
1
6
7
8
9
10
11 12 13
14 15
5
6
7
8
9
10
VG E - Volts
VG E - Volts
© 2005 IXYS All rights reserved
IXGR 40N60C2
IXGR 40N60C2D1
Fig. 7. Transconductance
Fig. 8. Dependence of Eoff on RG
70
60
50
40
30
20
10
1.8
1.6
1.4
1.2
º
I C = 60A
I C= 45A
TJ = -40 C
º
TJ = 125 C
G E = 15V
VC E = 400V
º
25 C
V
º
125 C
1
0.8
0.6
0.4
0.2
0
I C = 30A
I C= 15A
0
0
30
60
90
120
150
180
2
4
6
8 10
R G - Ohms
12
14
16
I C - Amperes
Fig. 9. Dependence of Eoff on Ic
Fig. 10. Dependence of Eoff on Temperature
1. 6
1. 4
1. 2
1.6
1.4
1.2
1
RG = 3 Ohms
RG = 10 Ohms - - - - -
RG = 3 Ohms
RG= 10 Ohms - - - - -
VG E = 15V
VC E = 400V
VGE = 15V
VCE = 400V
I C = 60A
1
0.8
0.6
0.4
0.2
0
0.8
0.6
0.4
0.2
0
º
TJ = 125 C
I C = 45A
I C = 30A
º
TJ = 25 C
I C = 15A
25
50
75
100
125
10
20
30 40
I C - Amperes
50
60
TJ - Degrees Centigrade
Fig. 12. Capacitance
Fig. 11. Gate Charge
15
12
9
10 0 0 0
10 0 0
10 0
f = 1M Hz
VC E = 300V
I C = 30A
I G = 10mA
C
ies
C
C
oes
res
6
3
0
10
0
20
40
60
80
100
0
5
10
15
20
25
30
35
40
Q G - nanoCoulombs
VC E - Volts
nsions
IXGR 40N60C2
IXGR 40N60C2D1
Fig. 13. Maximum Transient Thermal Resistance
0.8
0.7
0.6
0.5
0.4
0.3
0.2
0.1
0
1
10
100
1000
Pulse Width - milliseconds
© 2005 IXYS All rights reserved
IXGR 40N60C2
IXGR 40N60C2D1
60
A
1000
nC
30
A
TVJ= 100°C
VR = 300V
TVJ= 100°C
VR = 300V
50
40
30
20
10
0
25
IF= 60A
IF= 30A
IF= 15A
800
IF= 60A
IF= 30A
IF= 15A
IRM
Qr
IF
20
15
10
5
TVJ=150°C
TVJ=100°C
600
400
200
0
TVJ=25°C
0
A/μs
-diF/dt
0
1
2
3 V
VF
100
1000
0
200 400 600 1000
A/μs
-diF/dt
Fig. 14. Forward current IF versus VF
Fig. 15. Reverse recovery charge Qr
versus -diF/dt
Fig. 16. Peak reverse current IRM
versus -diF/dt
2.0
90
20
V
1.00
TVJ= 100°C
IF = 30A
TVJ= 100°C
VR = 300V
μs
ns
VFR
VFR
tfr
trr
1.5
Kf
15
0.75
0.50
0.25
0
tfr
80
IF= 60A
IF= 30A
IF= 15A
1.0
10
5
IRM
70
60
0.5
Qr
0.0
0
A/μs
0
40
80
120
160
0
200 400 600 1000
0
200 400 600 1000
°C
A/μs
diF/dt
TVJ
-diF/dt
Fig. 17. Dynamic parameters Qr, IRM
versus TVJ
Fig. 18. Recovery time trr versus -diF/dt
Fig. 19. Peak forward voltage VFR and
tfr versus diF/dt
1
0.1
0.01
0.001
0.1
1
0.0001
0.001
0.01
Time - Seconds
Fig. 20. Transient thermal resistance junction to case
IXYS reserves the right to change limits, test conditions, and dimensions.
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