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IXTA1N120P-TRL [LITTELFUSE]

Power Field-Effect Transistor,;
IXTA1N120P-TRL
型号： IXTA1N120P-TRL
厂家： LITTELFUSE    LITTELFUSE
描述：

Power Field-Effect Transistor,
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中文：  中文翻译
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PolarTM  
Power MOSFET  
IXTY1N120P  
IXTA1N120P  
IXTP1N120P  
VDSS = 1200V  
ID25 = 1A  
RDS(on) 20  
N-Channel Enhancement Mode  
Avalanche Rated  
TO-252 (IXTY)  
G
S
D (Tab)  
TO-263 (IXTA)  
Symbol  
VDSS  
Test Conditions  
Maximum Ratings  
TJ = 25C to 150C  
1200  
1200  
V
V
G
S
VDGR  
TJ = 25C to 150C, RGS = 1M  
VGSS  
VGSM  
Continuous  
Transient  
30  
40  
V
V
D (Tab)  
TO-220 (IXTP)  
ID25  
IDM  
TC = 25C  
1.0  
1.8  
A
A
TC = 25C, Pulse Width Limited by TJM  
IA  
TC = 25C  
TC = 25C  
1.0  
A
G
EAS  
100  
mJ  
D
S
D (Tab)  
dv/dt  
PD  
IS IDM, VDD VDSS, TJ 150°C  
TC = 25C  
10  
63  
V/ns  
W
G = Gate  
S = Source  
D
= Drain  
Tab = Drain  
TJ  
-55 ... +150  
150  
C  
C  
C  
TJM  
Tstg  
-55 ... +150  
Features  
TL  
TSOLD  
Maximum Lead Temperature for Soldering  
1.6 mm (0.062in.) from Case for 10s  
300  
260  
°C  
°C  
International Standard Packages  
Low QG  
Avalanche Rated  
Low Package Inductance  
Fast Intrinsic Rectifier  
FC  
Md  
Mounting Force (TO-263)  
Mounting Torque (TO-220)  
10..65 / 2.2..14.6  
1.13 / 10  
N/lb  
Nm/lb.in  
Weight  
TO-252  
TO-263  
TO-220  
0.35  
2.50  
3.00  
g
g
g
Advantages  
High Power Density  
Easy to Mount  
Space Savings  
Symbol  
Test Conditions  
Characteristic Values  
(TJ = 25C, Unless Otherwise Specified)  
Min.  
Typ.  
Max.  
Applications  
BVDSS  
VGS(th)  
IGSS  
VGS = 0V, ID = 250μA  
VDS = VGS, ID = 50μA  
VGS = 30V, VDS = 0V  
VDS = VDSS, VGS = 0V  
1200  
V
V
2.5  
4.5  
DC-DC Converters  
Switch-Mode and Resonant-Mode  
50 nA  
A  
Power Supplies  
AC and DC Motor Drives  
IDSS  
5
Discharge Circiuts in Lasers, Spark  
Igniters, RF Generators  
TJ = 125C  
200 A  
  
High Voltage Pulse Power  
RDS(on)  
VGS = 10V, ID = 0.5 • ID25, Notes 1& 2  
15.5  
20.0   
Applications  
DS99870D(6/18)  
© 2018 IXYS CORPORATION, All Rights Reserved  
IXTY1N120P IXTA1N120P  
IXTP1N120P  
Symbol  
Test Conditions  
Characteristic Values  
(TJ = 25C, Unless Otherwise Specified)  
Min.  
Typ.  
Max  
gfs  
VDS = 30V, ID = 0.5 • ID25, Note 1  
VGS = 0V, VDS = 25V, f = 1MHz  
0.55  
0.90  
S
Ciss  
Coss  
Crss  
445  
25  
pF  
pF  
pF  
5.4  
Qg(on)  
Qgs  
17.6  
3.5  
nC  
nC  
nC  
VGS = 10V, VDS = 0.5 • VDSS, ID = 0.5 • ID25  
Qgd  
10.6  
td(on)  
tr  
td(off)  
tf  
20  
28  
54  
27  
ns  
ns  
ns  
ns  
Resistive Switching Times  
V
GS = 10V, VDS = 0.5 • VDSS, ID = 0.5 • ID25  
RG = 30(External)  
RthJC  
RthCS  
2.0 C/W  
C/W  
TO-220  
0.50  
Source-Drain Diode  
Symbol  
Test Conditions  
Characteristic Values  
(TJ = 25C, Unless Otherwise Specified)  
Min.  
Typ.  
Max  
IS  
VGS = 0V  
1
A
A
ISM  
VSD  
trr  
Repetitive, Pulse Width Limited by TJM  
IF = IS, VGS = 0V, Note 1  
3
1.5  
V
IF = 1A, -di/dt = 100A/μs, VR = 100V  
900  
ns  
Notes: 1. Pulse test, t 300s, duty cycle, d  2%.  
2. On through-hole packages, RDS(on) Kelvin test contact  
location must be 5mm or less from the package body.  
IXYS Reserves the Right to Change Limits, Test Conditions, and Dimensions.  
IXYS MOSFETs and IGBTs are covered  
by one or more of the following U.S. patents: 4,860,072 5,017,508  
4,881,106 5,034,796  
4,835,592 4,931,844  
5,049,961  
5,063,307  
5,187,117  
5,237,481  
5,381,025  
5,486,715  
6,162,665  
6,259,123B1  
6,306,728B1  
6,404,065B1  
6,534,343  
6,583,505  
6,683,344  
6,710,405B2 6,759,692  
6,710,463  
6,727,585  
7,005,734B2 7,157,338B2  
7,063,975B2  
6,771,478B2 7,071,537  
IXTY1N120P IXTA1N120P  
IXTP1N120P  
Fig. 2. Output Characteristics @ TJ = 125oC  
Fig. 1. Output Characteristics @ TJ = 25oC  
1.0  
0.9  
0.8  
0.7  
0.6  
0.5  
0.4  
0.3  
0.2  
0.1  
0.0  
1.4  
1.2  
1.0  
0.8  
0.6  
0.4  
0.2  
0.0  
V
= 10V  
7V  
V
= 10V  
6V  
GS  
GS  
6V  
5V  
5V  
0
5
10  
15  
20  
25  
30  
35  
40  
1.4  
6.0  
0
5
10  
15  
20  
25  
30  
VDS - Volts  
VDS - Volts  
Fig. 3. RDS(on) Normalized to ID = 0.5A Value vs.  
Junction Temperature  
Fig. 4. RDS(on) Normalized to ID = 0.5A Value vs.  
Drain Current  
2.4  
2.2  
2.0  
1.8  
1.6  
1.4  
1.2  
1.0  
0.8  
2.8  
2.4  
2.0  
1.6  
1.2  
0.8  
0.4  
V
= 10V  
V
= 10V  
GS  
GS  
T = 125oC  
J
I
= 1.0A  
D
I
= 0.5A  
D
T
= 25oC  
J
-50  
-25  
0
25  
50  
75  
100  
125  
150  
0
0.2  
0.4  
0.6  
0.8  
1
1.2  
ID - Amperes  
TJ - Degrees Centigrade  
Fig. 5. Maximum Drain Current vs. Case Temperature  
Fig. 6. Input Admittance  
0.8  
0.7  
0.6  
0.5  
0.4  
0.3  
0.2  
0.1  
0
1.0  
0.8  
0.6  
0.4  
0.2  
0.0  
V
= 30V  
DS  
T
J
= 125oC  
25oC  
- 40oC  
3.0  
3.5  
4.0  
4.5  
5.0  
5.5  
-50  
-25  
0
25  
50  
75  
100  
125  
150  
VGS - Volts  
TC - Degrees Centigrade  
© 2018 IXYS CORPORATION, All Rights Reserved  
IXTY1N120P IXTA1N120P  
IXTP1N120P  
Fig. 7. Transconductance  
Fig. 8. Forward Voltage Drop of Intrinsic Diode  
3.0  
2.5  
2.0  
1.5  
1.0  
0.5  
0.0  
1.6  
1.4  
1.2  
1.0  
0.8  
0.6  
0.4  
0.2  
0.0  
T
J
= - 40oC  
V
= 30V  
DS  
25oC  
125oC  
TJ = 125oC  
T
J
= 25oC  
0
0.1  
0.2  
0.3  
0.4  
0.5  
0.6  
0.7  
0.8  
0.9  
1
0.3  
0.4  
0.5  
0.6  
0.7  
0.8  
0.9  
1.0  
1.1  
1.2  
ID - Amperes  
VSD - Volts  
Fig. 9. Gate Charge  
Fig. 10. Capacitance  
1,000  
100  
10  
10  
9
8
7
6
5
4
3
2
1
0
V
I
= 600V  
DS  
C
= 0.5A  
iss  
D
I
= 10mA  
G
C
oss  
C
rss  
f
= 1 MHz  
5
1
0
2
4
6
8
10  
12  
14  
16  
18  
0
10  
15  
20  
25  
30  
35  
40  
VDS - Volts  
QG - NanoCoulombs  
Fig. 11. Maximum Transient Thermal Impedance  
10  
1
0.1  
0.01  
0.00001  
0.0001  
0.001  
0.01  
0.1  
1
10  
Pulse Width - Seconds  
IXYS Reserves the Right to Change Limits, Test Conditions, and Dimensions.  
IXTY1N120P IXTA1N120P  
IXTP1N120P  
TO-252 AA Outline  
TO-263 Outline  
TO-220 Outline  
A
A
E
b3  
A
C2  
E
E1  
4
c2  
L3  
E
oP  
A1  
4
L1  
D1  
D
H1  
A1  
A2  
Q
L2  
H
H
A1  
L4  
1
3
2
1
2
3
D2  
E1  
D
L1  
b2  
L
c
b2  
b
L3  
c
D1  
1 - Gate  
2,4 - Drain  
3 - Source  
e
e
e
e1  
0.43 [11.0]  
L2  
e1  
0  
0
A2  
5.55MIN  
OPTIONAL  
EJECTOR  
PIN  
0.34 [8.7]  
L1  
0.66 [16.6]  
A2  
L
6.50MIN  
4
1 - Gate  
2,4 - Drain  
3 - Source  
0.20 [5.0]  
0.10 [2.5]  
0.12 [3.0]  
0.06 [1.6]  
6.40  
2.28  
3X b  
3X b2  
e
c
2.85MIN  
1.25MIN  
e1  
BOTTOM  
VIEW  
1 - Gate  
2,4 - Drain  
3 - Source  
LAND PATTERN RECOMMENDATION  
© 2018 IXYS CORPORATION, All Rights Reserved  
IXYS REF: T_1N120P(2A-245) 4-01-08  
Disclaimer Notice - Information furnished is believed to be accurate and reliable. However, users should independently  
evaluate the suitability of and test each product selected for their own applications. Littelfuse products are not designed for,  
and may not be used in, all applications. Read complete Disclaimer Notice at www.littelfuse.com/disclaimer-electronics.  

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