MWI50-12F7 [LITTELFUSE]
Insulated Gate Bipolar Transistor,;
| 型号： | MWI50-12F7 |
| 厂家： | 
LITTELFUSE |
| 描述： | Insulated Gate Bipolar Transistor, 栅 |
| 文件： | 总2页 (文件大小：76K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
MKI 50-12F7
Advanced Technical Information
IC25
VCES
VCE(sat)typ. = 3.2 V
= 65 A
= 1200 V
IGBT Modules
H Bridge
Short Circuit SOA Capability
Square RBSOA
13
9
1
2
10
16
14
11
12
3
4
17
MKI
Features
IGBTs
• Fast NPT IGBTs
Symbol
VCES
Conditions
Maximum Ratings
- low saturation voltage
- positive temperature coefficient for
easy paralleling
TVJ = 25°C to 150°C
1200
20
V
- fast switching
VGES
V
- short tail current for optimized
performance also in resonant circuits
• HiPerFREDTM diode:
IC25
IC80
TC = 25°C
TC = 80°C
65
45
A
A
- fast reverse recovery
- low operating forward voltage
- low leakage current
• Industry Standard Package
- solderable pins for PCB mounting
- isolated copper base plate
- UL registered, E 72873
ICM
VCEK
VGE = 15 V; RG = 13 Ω; TVJ = 125°C
100
VCES
A
µs
W
RBSOA; clamped inductive load; L = 100 µH
tSC
VCE = 900 V; VGE = 15 V; RG = 13 Ω; TVJ = 125°C
SCSOA; non-repetitive
10
Ptot
TC = 25°C
350
Typical Applications
Symbol
VCE(sat)
Conditions
Characteristic Values
(TVJ = 25°C, unless otherwise specified)
- motor control
min.
typ. max.
. DC motor amature winding
. DC motor excitation winding
. synchronous motor excitation winding
- supply of transformer primary winding
. power supplies
. welding
. X-ray
. battery charger
IC = 50 A; VGE = 15 V; TVJ = 25°C
TVJ = 125°C
3.2
3.8
3.8
V
V
VGE(th)
ICES
IC = 2 mA; VGE = VCE
4.5
6.5
V
VCE = VCES
;
VGE = 0 V; TVJ = 25°C
TVJ = 125°C
0.7 mA
mA
2.5
IGES
VCE = 0 V; VGE
=
20 V
500 nA
td(on)
tr
td(off)
tf
Eon
Eoff
130
60
360
30
6.0
2.5
ns
ns
ns
ns
mJ
mJ
Inductive load, TVJ = 125°C
VCE = 600 V; IC = 50 A
VGE = 15 V; RG = 13 Ω
Cies
QGon
VCE = 25 V; VGE = 0 V; f = 1 MHz
VCE = 600 V; VGE = 15 V; IC = 50 A
3.3
600
nF
nC
RthJC
(per IGBT)
0.35 K/W
IXYS reserves the right to change limits, test conditions and dimensions.
© 2004 IXYS All rights reserved
1 - 2
MKI 50-12F7
Advanced Technical Information
Diodes
Symbol
Equivalent Circuits for Simulation
Conduction
Conditions
Maximum Ratings
IF25
IF80
TC = 25°C
TC = 80°C
110
70
A
A
Symbol
VF
Conditions
Characteristic Values
min. typ. max.
IGBT (typ. at VGE = 15 V; TJ = 125°C)
IF = 50 A; VGE = 0 V; TVJ = 25°C
TVJ = 125°C
2.2
1.6
2.6
V
V
V0 = 2.05 V; R0 = 35 mΩ
Free Wheeling Diode (typ. at TJ = 125°C)
IRM
trr
IF = 50 A; di /dt = -500 A/µs; TVJ = 125°C
VR = 600 V;FVGE = 0 V
40
200
A
ns
V0 = 1.3 V; R0 = 6 mΩ
RthJC
(per diode)
0.61 K/W
Thermal Response
Module
Symbol
Conditions
Maximum Ratings
TVJ
TVJM
Tstg
operating
-40...+125
-40...+150
-40...+125
°C
°C
°C
IGBT (typ.)
Cth1 = 0.22 J/K; Rth1 = 0.26 K/W
Cth2 = 1.74 J/K; Rth2 = 0.09 K/W
VISOL
Md
IISOL ≤ 1 mA; 50/60 Hz
2500
V~
Mounting torque (M5)
2.7 - 3.3
Nm
Free Wheeling Diode (typ.)
Cth1 = 0.151 J/K; Rth1 = 0.483 K/W
Cth2 = 1.003 J/K; Rth2 = 0.127 K/W
Symbol
Rpin-chip
Conditions
Characteristic Values
min.
typ. max.
5
mΩ
Dimensions in mm (1 mm = 0.0394")
dS
dA
Creepage distance on surface
Strike distance in air
6
6
mm
mm
RthCH
with heatsink compound
0.02
180
K/W
g
Weight
pins 5, 6, 7, 8 and 15 for MWI only
© 2004 IXYS All rights reserved
2 - 2
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