SLVU2.8-8BTG [LITTELFUSE]
TVS DIODE 2.8V 17V 8SOIC;型号: | SLVU2.8-8BTG |
厂家: | LITTELFUSE |
描述: | TVS DIODE 2.8V 17V 8SOIC 局域网 光电二极管 电视 |
文件: | 总4页 (文件大小:887K) |
中文: | 中文翻译 | 下载: | 下载PDF数据表文档文件 |
TVS Diode Arrays (SPA® Diodes)
Lightning Surge Protection- SLVU2.8-8 Series
RoHS
GREEN
Pb
SLVU2.8-8 Series 2.8V 30A TVS Array
Description
The SLVU2.8-8 was designed to protect low voltage,
CMOS devices from ESD and lightning induced transients.
There is a compensating diode in series with each low
voltageTVS to present a low loading capacitance to the line
being protected. These robust structures can safely absorb
repetitive ESD strikes at ±±3kV ꢀcontact discharge) per IEC
61333-4-2 standard and can safely dissipate up to ±3A ꢀIEC
61333-4-5 2nd Edition, tP=8/23μs) with very low clamping
voltages.
Features
• ESD, IEC 61333-4-2,
±±3kV contact, ±±3kV air
• SOIC-8 ꢀJEDEC MO-312)
pin configuration allows
for protection of all 4
Pinout
• EFT, IEC 61333-4-4, 43A
ꢀ5/53ns)
differential pair for 1GbE
ꢄ
ꢅ
ꢆ
ꢇ
• RoHS Compliant and
Lead Free
• Lightning, IEC 61333-4-5
2nd Edition, ±3A ꢀ8/23μs)
• Moisture Sensitivity Level
ꢀMSL-1)
• Low capacitance of 2.6pF
per line
• Low leakage current of
3.1μA ꢀMAX) at 2.8V
ꢀ
ꢁ
ꢂ
ꢃ
Applications
Functional Block Diagram
• 13/133/1333 Ethernet
• WAN/LAN Equipment
• Switching Systems
• Analog Inputs
• Base Stations
Pin 1.3.5.7
• Desktops, Servers, and
Notebooks
Additional Information
Pin 2.4.6.8
Daꢀasꢁeeꢀ
ꢀesoꢁrꢂes
Saꢀꢁꢂes
© 2019 Littelfuse, Inc.
Specifications are subject to change without notice.
Revised: 08/22/19
TVS Diode Arrays (SPA® Diodes)
Lightning Surge Protection- SLVU2.8-8 Series
Thermal Information
Absolute Maximum Ratings
Parameter
Peak Pulse Power ꢀtP=8/23µs)
Peak Pulse Current ꢀtP=8/23µs)
OperatingTemperature
Rating
753
Units
W
Parameter
StorageTemperature Range
Maximum JunctionTemperature
Rating
-55 to 153
153
Units
°C
±3
A
°C
-43 to 125
-55 to 153
ºC
Maximum LeadTemperature ꢀSoldering
23-43s)
263
°C
StorageTemperature
ºC
CAUTION: Stresses above those listed in “Absolute Maximum Ratings” may cause
permanent damage to the device. This is a stress only rating and operation of the device
at these or any other conditions above those indicated in the operational sections of this
specification is not implied.
Electrical Characteristics (TOP = 25°C)
Parameter
Symbol
VRWM
VBR
Test Conditions
IR≤1μA ꢀEach Line)
IT=2μA ꢀEach Line)
ISB=53mA
Min
Typ
Max
2.8
Units
V
Reverse Standoff Voltage
Reverse Breakdown Voltage
Snapback Voltage
±.3
2.8
V
VSB
V
Reverse Leakage Current
ILEAK
VR=2.8V ꢀEach Line)
3.1
μA
IPP=5A, tP=8/23μs ꢀEach Line)
IPP=24A, tP=8/23μs ꢀEach Line)
8.5
17
Clamping Voltage1
VC
V
IEC61333-4-2 ꢀContact)
IEC61333-4-2 ꢀAir)
±±3
±±3
ESD Withstand Voltage1
VESD
kV
Dynamic Resistance2
Diode Capacitance1
RDYN
CD
TLP tp=133ns, ꢀEach Line)
VR=3V, f=1MHz ꢀEach Line)
3.±
2.6
Ω
±.3
pF
Note: 1 Parameter is guaranteed by design and/or device characterization.
2Transmission Line Pulse ꢀTLP) test setting : Std.TDRꢀ53Ω),tp=133ns, tr=3.2ns ITLP and VTLP averaging window: star t1=73ns to end t2=83ns
ClampingVoltage vs. Peak Pulse Currennt (Each line)
Capacitance vs. Reverse Bias (Each line)
ꢆꢁꢀ
ꢅꢁꢂ
ꢅꢁꢀ
ꢄꢁꢂ
ꢄꢁꢀ
ꢃꢁꢂ
ꢃꢁꢀ
ꢀꢁꢂ
ꢀ
30
25
20
15
10
5
0
ꢀ
ꢀꢁꢆ
ꢀꢁꢇ
ꢃꢁꢄ
ꢃꢁꢈ
ꢄ
ꢄꢁꢆ
ꢄꢁꢇ
0
5
10
15
20
25
30
Bias Voltage (V)
Peak Pulse Current-IPP (A)
© 2019 Littelfuse, Inc.
Specifications are subject to change without notice.
Revised: 08/22/19
TVS Diode Arrays (SPA® Diodes)
Lightning Surge Protection- SLVU2.8-8 Series
PositiveTransmission Line Pulsing (TLP) Plot (Each line)
NegativeTransmission Line Pulsing (TLP) Plot (Each line)
35
30
25
20
15
10
5
30
25
20
15
10
5
0
0
-20
-15
-10
-5
0
0
5
10
15
20
TLP Volts (V)
TLP Volts (V)
8/20 µs PulseWaveform
Product Characteristics
Lead Plating
ꢂꢂꢀꢁ
ꢂꢀꢀꢁ
ꢊꢀꢁ
ꢉꢀꢁ
ꢈꢀꢁ
ꢇꢀꢁ
ꢆꢀꢁ
ꢅꢀꢁ
ꢄꢀꢁ
ꢃꢀꢁ
ꢂꢀꢁ
ꢀꢁ
MatteTin
Lead Material
Copper Alloy
Lead Coplanarity
Substrate material
Body Material
3.3334 inches ꢀ3.132mm)
Silicon
V-3 per UL 94 Molded Epoxy
Notes :
1. All dimensions are in millimeters
2. Dimensions include solder plating.
±. Dimensions are exclusive of mold flash & metal burr.
4. All specifications comply to JEDEC SPEC MO-23± Issue A
5. Blo is facing up for mold and facing down for trim/form, i.e. reverse trim/form.
6. Package surface matte finish VDI 11-1±.
ꢀꢋꢀ
ꢆꢋꢀ
ꢂꢀꢋꢀ
ꢂꢆꢋꢀ
ꢃꢀꢋꢀ
ꢃꢆꢋꢀ
ꢄꢀꢋꢀ
Time (μs)
Soldering Parameters
Reflow Condition
Pb – Free assembly
153°C
tP
-Temperature Min ꢀTsꢀmin)
)
TP
Critical Zone
L to TP
Pre Heat -Temperature Max ꢀTsꢀmax)
)
233°C
Ramp-up
TL
TS(max)
-Time ꢀmin to max) ꢀts)
63 – 183 secs
tL
Average ramp up rate ꢀLiquidus) Temp ꢀTL)
to peak
5°C/second max
Ramp-down
Preheat
TSꢀmax) toTL - Ramp-up Rate
5°C/second max
217°C
TS(min)
tS
-Temperature ꢀTL) ꢀLiquidus)
Reflow
-Temperature ꢀtL)
63 – 153 seconds
263+3/-5 °C
25
time to peak temperature
PeakTemperature ꢀTP)
Time
Time within 5°C of actual peak
Temperature ꢀtp)
23 – 43 seconds
Ramp-down Rate
5°C/second max
8 minutes Max.
263°C
Ordering Information
Time 25°C to peakTemperature ꢀTP)
Do not exceed
Part Number
Package
SOIC-8
Min. Order Qty.
2533
SLVU2.8-8BTG
© 2019 Littelfuse, Inc.
Specifications are subject to change without notice.
Revised: 08/22/19
TVS Diode Arrays (SPA® Diodes)
Lightning Surge Protection- SLVU2.8-8 Series
Part Numbering System
Part Marking System
8
7
6
5
SLVU2.8 -8 B T G
SLVU2.8-8BTG
xxxxxxxxx
F
L
G= Green
T= Tape & Reel
Package
B = SOIC-8
No. of channels
Series
1
2
3
4
DATE CODE
Package Dimensions — Mechanical Drawings and Recommended Solder Pad Outline
Package
Pins
SOIC-8
8
JEDEC
Millimetres
MS-312
Inches
Min
1.±5
3.13
1.25
3.±1
3.17
4.83
5.83
±.83
Max
Min
Max
3.369
3.313
3.365
3.323
3.313
3.197
3.244
3.157
ꢀ
ꢁ
A
A1
A2
B
1.75
3.25
1.65
3.51
3.25
5.33
6.23
4.33
3.35±
3.334
3.353
3.312
3.337
3.189
3.228
3.153
o
Recommended
Soldering Pad Outline
(Reference Only)
c
D
E
E1
e
1.27 BSC
3.353 BSC
3.316
L
3.43
1.27
3.353
Embossed CarrierTape & Reel Specification — SOIC Package
Millimetres
Inches
User Feeding Direction
Symbol
Min
Max
1.85
5.6
Min
Max
3.37±
3.22
E
F
1.65
5.4
1.9
3.365
3.21±
3.375
3.359
P2
D
2.1
3.38±
3.36±
Pin 1 Location
1.5
1.6
D1
P0
10P0
W
P
1.53 Min
3.359 Min
3.154 3.161
1.574 +/- 3.338
±.9
4.1
43.3 +/- 3.23
11.9
12.1
8.1
6.5
5.±
2.2
3.468
3.476
3.±19
3.256
3.239
3.387
7. 9
6.±
5.1
2
3.±11
3.248
3.2
A0
B0
K0
t
3.379
3.±3 +/- 3.35
3.312 +/- 3.332
© 2019 Littelfuse, Inc.
Specifications are subject to change without notice.
Revised: 08/22/19
相关型号:
SLVU2.8.TG
Trans Voltage Suppressor Diode, 400W, 2.8V V(RWM), Unidirectional, 1 Element, Silicon, PLASTIC PACKAGE-3
SEMTECH
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