SP1012-05WTG [LITTELFUSE]
Trans Voltage Suppressor Diode, 5V V(RWM), Bidirectional, 5 Element, Silicon,;
| 型号： | SP1012-05WTG |
| 厂家： | 
LITTELFUSE |
| 描述： | Trans Voltage Suppressor Diode, 5V V(RWM), Bidirectional, 5 Element, Silicon, 局域网 二极管 |
| 文件： | 总4页 (文件大小：898K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
TVS Diode Arrays (SPA® Diodes)
General Purpose ESD Protection-SP1012 Series
RoHS
GREEN
Pb
SP1012 Series 6.5pF, 15kV Bidirectional TVS Array
Description
The miniature 5 channel bidirectionalTVS array provides
protection for data lines that may experience destructive
electrostatic discharges (ESD). These robust diodes can
safely absorb repetitive ESD strikes at the maximum
level specified in the IEC 61000-4-2 international standard
without performance degradation. The bidirectional
configuration provides symmetrical ESD protection for data
lines when AC signals are present.
Functional Block Diagram
Features
• RoHS compliant,
Halogen-free and lead-
free
• Highest densityTVS array
available today
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ꢁ
ꢂ
• 5 channels of protection
in a 0.94x0.61mm
footprint (i.e. a discrete
0402)
• ESD, IEC 61000-4-2,
±15kV contact, ±±0kV air
• EFT, IEC 61000-4-4,40A
(5/50ns)
• Lightning protection, IEC
61000-4-5 2nd Edition,
±.0A (tp=8/20µs)
ꢃ
ꢄꢅ
ꢆ
*Any pin can be used as GND.
Pinout
Applications
• Smart Phones
• Mobile Phones
• WearableTechnology
ꢀ
ꢃ
ꢁ
ꢄ
ꢂ
ꢅ
Additional Information
Die edge
Daꢀasꢁeeꢀ
ꢀesoꢁrꢂes
Saꢀꢁꢂes
Life Support Note:
Not Intended for Use in Life Support or Life Saving Applications
The products shown herein are not designed for use in life sustaining or life saving
applications unless otherwise expressly indicated.
© 2016 Littelfuse, Inc.
Specifications are subject to change without notice.
Revised: 12/13/16
TVS Diode Arrays (SPA® Diodes)
General Purpose ESD Protection-SP1012 Series
Absolute Maximum Ratings
Symbol
IPP
Parameter
Value
±.0
Units
A
Peak Current (tp=8/20μs)
OperatingTemperature
StorageTemperature
TOP
-40 to 125
-55 to 150
°C
°C
TSTOR
CAUTION: Stresses above those listed in “Absolute Maximum Ratings” may cause permanent damage to the device. This is a stress only rating and operation of
the device at these or any other conditions above those indicated in the operational sections of this specification is not implied.
Thermal Information
Parameter
StorageTemperature Range
Rating
-55 to 150
150
Units
°C
Maximum JunctionTemperature
°C
Maximum LeadTemperature (Soldering 20-40s)
260
°C
Electrical Characteristics (TOP=25ºC)
Parameter
Symbol
VRWM
Test Conditions
IR=1mA
Min
6.0
Typ
Max
5.0
Units
V
Reverse Standoff Voltage
Reverse Breakdown
Voltage
VBD
IR
V
Leakage Current
VR=5V
1.0
μA
V
IPP=1A, tp=8/20µs, Fwd
IPP=±A, tp=8/20µs, Fwd
TLP, tp=100ns, I/O to GND
10.2
12.±
0.48
Clamp Voltage1
VC
V
Dynamic Resistance 2
ESD Withstand Voltage1
Diode Capacitance1
RDYN
VESD
CD
Ω
IEC 61000-4-2 (Contact Discharge)
IEC 61000-4-2 (Air Discharge)
Reverse Bias=0V (I/O to GND)
±15
±±0
kV
kV
pF
6.5
Note:
1
Parameter is guaranteed by design and/or device characterization.
Transmission Line Pulse (TLP) with 100ns width and 200ps rise time.
2
ClampingVoltage vs. IPP
Capacitance vs. Reverse Bias
14
12
10
7.0
6.0
5.0
4.0
3.0
2.0
1.0
0.0
8
6
4
2
0
0.0
1.0
2.0
3.0
4.0
5.0
1.0
1.5
2.0
2.5
3.0
Voltage (V)
Peak Pulse Current-IPP (A)
© 2016 Littelfuse, Inc.
Specifications are subject to change without notice.
Revised: 12/13/16
TVS Diode Arrays (SPA® Diodes)
General Purpose ESD Protection-SP1012 Series
Transmission Line Pulsing(TLP) Plot
PulseWaveform
20
18
16
14
12
10
8
110%
100%
90%
80%
70%
60%
50%
40%
30%
20%
10%
0%
6
4
2
0
0
4
8
12
16
20
24
28 32
0.0
5.0
10.0
15.0
20.0
25.0
30.0
TLP Voltage (V)
Time (μs)
Soldering Parameters
Reflow Condition
Pb – Free assembly
tP
TP
Critical Zone
TL to TP
-Temperature Min (Ts(min)
)
150°C
Ramp-up
TL
TS(max)
Pre Heat -Temperature Max (Ts(max)
)
200°C
tL
-Time (min to max) (ts)
60 – 180 secs
Ramp-down
Preheat
Average ramp up rate (Liquidus) Temp (TL)
to peak
±°C/second max
TS(min)
tS
TS(max) toTL - Ramp-up Rate
±°C/second max
217°C
25
-Temperature (TL) (Liquidus)
Reflow
time to peak temperature
Time
-Temperature (tL)
60 – 150 seconds
260+0/-5 °C
PeakTemperature (TP)
Time within 5°C of actual peak
Temperature (tp)
20 – 40 seconds
Ramp-down Rate
6°C/second max
8 minutes Max.
260°C
Part Marking System
Time 25°C to peakTemperature (TP)
Do not exceed
Top
Part Numbering System
2
–
SP 1012 05 W T G
TVS Diode Arrays
(SPA®Diodes)
G= Green
Pin 1
T= Tape & Reel
Flip vertically (downward) 180º
Bottom
Series
Package
W: Flipchip
Number of
Channels
Pin 1
Ordering Information
Part Number
Package
Marking
Min. Order
Qty.
0.94x0.61mm
Flip Chip
SP1012-05WTG
2
5000
© 2016 Littelfuse, Inc.
Specifications are subject to change without notice.
Revised: 12/13/16
TVS Diode Arrays (SPA® Diodes)
General Purpose ESD Protection-SP1012 Series
Package Dimensions
0.94x0.61mm Flip Chip
Millimeters Inches
Typ
Symbol
Min
Typ
Max
0.±40
0.015
Min
Max
A
A1
b
0.280
0.005
0.175
0.585
0.915
0.±10
0.010
0.180
0.610
0.940
0.±±0
0.0110 0.0122 0.01±4
0.0002 0.0004 0.0006
0.185 0.0069 0.0071 0.007±
0.6±5 0.02±0 0.0240 0.0250
0.965 0.0±60 0.0±70 0.0±80
0.01±0
D
E
e
ꢀꢁꢂꢃ ꢁꢄ ꢅꢅ
Embossed CarrierTape & Reel Specification — Flipchip
D
Symbol
Millimeters
P1
P2
P0
A0
B0
D
0.68+/-0.0±
1.12+/-0.0±
E
ø 1.50 + 0.10
ø 0.40 +/- 0.05
1.75+/-0.10
D1
E
F
F
±.50+/-0.05
0.±6+/-0.0±
2.00+/-0.05
2.00+/-0.05
4.00+/-0.10
8.00 + 0.±0 -0.10
0.20+/-0.02
W
K0
P0
P1
P2
W
T
D1
T
K0
B0
A0
Pin 1 Location
User Feeding Direction
© 2016 Littelfuse, Inc.
Specifications are subject to change without notice.
Revised: 12/13/16
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